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HER303G R0G

HER303G R0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    DO-201AD

  • 描述:

    DIODE GEN PURP 200V 3A DO201AD

  • 数据手册
  • 价格&库存
HER303G R0G 数据手册
HER301G – HER308G Taiwan Semiconductor 3A, 50V - 1000V High Efficient Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 3 A VRRM 50 - 1000 V IFSM 125 A TJ MAX 150 °C APPLICATIONS Package DO-201AD Configuration Single die ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● Case: DO-201AD Molding compound meets UL 94V-0 flammability rating Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 1.10g (approximately) DO-201AD ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature Storage temperature SYMBOL HER HER HER HER HER HER HER HER UNIT 301G 302G 303G 304G 305G 306G 307G 308G HER HER HER HER HER HER HER HER 301G 302G 303G 304G 305G 306G 307G 308G VRRM 50 100 200 300 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V IF 3 A IFSM 125 A TJ -55 to +150 °C TSTG -55 to +150 °C 1 Version: I2105 HER301G – HER308G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 10 °C/W Junction-to-ambient thermal resistance RӨJA 35 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage (1) Reverse current @ rated VR (2) Junction capacitance Reverse recovery time CONDITIONS HER301G HER302G HER303G HER304G I = 3A, TJ = 25°C HER305G F HER306G HER307G HER308G TJ = 25°C TJ = 125°C HER301G HER302G HER303G HER304G 1MHz, VR = 4.0V HER305G HER306G HER307G HER308G HER301G HER302G HER303G HER304G IF = 0.5A, IR = 1.0A, HER305G Irr = 0.25A HER306G HER307G HER308G SYMBOL VF IR TYP MAX UNIT - 1.0 V - 1.3 V - 1.7 V - 10 µA - 200 µA 60 - pF 35 - pF - 50 ns - 75 ns CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING HER3xG DO-201AD 1,250 / Tape & Reel HER3xG A0G DO-201AD 500 / Ammo box HER3xGH DO-201AD 1,250 / Tape & Reel HER3xGHA0G DO-201AD 500 / Ammo box Notes: 1. "x" defines voltage from 50V (HER301G) to 1000V (HER308G) 2. “H” means AEC-Q101 qualified 2 Version: I2105 HER301G – HER308G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 3 CAPACITANCE (pF) 2 1 100 HER301G-HER305G 10 HER306G-HER308G f=1.0MHz Vsig=50mVp-p 0 1 25 50 75 100 125 150 1 10 CASE TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=125°C TJ=75°C 1 0.1 TJ=25°C 0.01 10 20 30 40 50 60 70 80 90 100 1010 HER301G-HER304G UF1DLW 1 HER305G TJ=125°C TJ=25°C 10.1 HER306G-HER308G 0.01 0.1 0.001 0.4 0.5 0.6 0.7 0.8 0.9 0.3 0.4 0.5 0.6 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse Pulse width width 300μs 300μs 1% duty cycle Pulse width 1 1.1 1.2 1.3 1.4 1.5 0.7 0.8 0.9 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 150 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (µA) Fig.3 Typical Reverse Characteristics 10 100 (A) AVERAGE FORWARD CURRENT (A) 4 8.3ms single half sine wave 125 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: I2105 1.2 HER301G – HER308G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: I2105 HER301G – HER308G Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-201AD MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: I2105 HER301G – HER308G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: I2105
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