MBRF25150CTHC0G

MBRF2535CT – MBRF25150CT Taiwan Semiconductor 25A, 35V - 150V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF 25 A VRRM 35 - 150 V IFSM 200 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBRF MBRF MBRF MBRF MBRF MBRF MBRF PARAMETER SYMBOL 2535 2545 2550 2560 CT CT CT CT 2590 25100 25150 UNIT CT CT CT MBRF MBRF MBRF MBRF MBRF MBRF MBRF 2535 2545 2550 2560 2590 25100 25150 CT CT CT CT CT CT CT Marking code on the device Repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 V Reverse voltage, total rms value VR(RMS) 24 31 35 42 63 70 105 V Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage Junction temperature IF 25 A IFSM 200 A IFRM 25 A dv/dt 10,000 V/µs TJ -55 to +150 °C TSTG -55 to +150 °C Storage temperature 1 Version: L2105 MBRF2535CT – MBRF25150CT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance RӨJA 8 °C/W Junction-to-case thermal resistance RӨJC 1 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MBRF2535CT MBRF2545CT MBRF2550CT MBRF2560CT MBRF25100CT MBRF25150CT MBRF2535CT MBRF2545CT MBRF2550CT MBRF2590CT (1) MBRF25150CT MBRF2545CT MBRF2550CT - V - 0.75 V - 0.85 V - 0.95 V - 0.82 V - - V - 0.92 V - 1.02 V - - V - 0.65 V - 0.75 V - 0.92 V - 0.73 V - - V - 0.88 V - 0.98 V IF = 12.5A,TJ = 125°C MBRF2590CT MBRF25100CT MBRF25150CT MBRF2535CT MBRF2545CT MBRF2550CT MBRF2560CT - VF MBRF2535CT MBRF2560CT UNIT IF = 25A,TJ = 25°C MBRF25100CT Forward voltage per diode MAX IF = 12.5A,TJ = 25°C MBRF2590CT MBRF2560CT TYP IF = 25A,TJ = 125°C MBRF2590CT MBRF25100CT MBRF25150CT 2 Version: L2105 MBRF2535CT – MBRF25150CT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT - 2 mA - 100 µA - 15 mA - 10 mA - 7.5 mA - 5 mA MBRF2535CT MBRF2545CT MBRF2550CT MBRF2560CT TJ = 25°C MBRF2590CT MBRF25100CT Reverse current @ rated VR per diode (2) MBRF25150CT IR MBRF2535CT MBRF2545CT MBRF2550CT MBRF2560CT TJ = 125°C MBRF2590CT MBRF25100CT MBRF25150CT Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBRF25xCT ITO-220AB 50 / Tube MBRF25xCTH ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 35V(MBRF2535CT) to 150V(MBRF25150CT) 2. “H” means AEC-Q101 qualified 3 Version: L2105 MBRF2535CT – MBRF25150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 25 CAPACITANCE (pF) 20 15 10 1000 MBRF2535CT-2560CT MBRF2590CT-25150CT 100 5 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) MBRF2535CT-2545CT MBRF2550CT-25150CT 1 TJ=125°C 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 100 Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 100 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 100010 100 1 MBRF2535CT-2545CT MBRF2550CT-2560CT UF1DLW MBRF2590CT-25150CT TJ=125°C T =125°C J 10 0.1 TJ=25°C 1 0.01 TJ=25°C Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 220 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics 10 10 REVERSE VOLTAGE (V) 200 180 8.3ms single half sine wave 160 140 120 100 80 60 40 20 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 (A) AVERAGE FORWARD CURRENT (A) 30 Version: L2105 1.2 MBRF2535CT – MBRF25150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: L2105 MBRF2535CT – MBRF25150CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: L2105 MBRF2535CT – MBRF25150CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: L2105