TSF10H200C C0G

TSF10H100C – TSF10H200C Taiwan Semiconductor 10A, 100V - 200V Trench Schottky Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Patented Trench Schottky technology Excellent high temperature stability Low forward voltage Low power loss/ high efficiency High forward surge capability Compliant RoHS Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT IF 10 A VRRM 100 - 200 V IFSM 100 A TJ MAX 150 °C Package ITO-220AB Configuration Dual dies Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Mounting torque: 0.56 N⋅m maximum Polarity: As marked Weight: 1.70g (approximately) ITO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) TSF10H TSF10H TSF10H TSF10H UNIT 100C 120C 150C 200C TSF10H TSF10H TSF10H TSF10H 100C 120C 150C 200C 100 120 150 200 V 70 84 105 140 V IF 10 A IFSM 100 A dv/dt 10,000 V/µs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Forward current Surge peak forward current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of off-state voltage 1 Version: I2105 TSF10H100C – TSF10H200C Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 4 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TSF10H100C TSF10H120C TSF10H150C Forward voltage per diode (1) TSF10H200C VF TSF10H100C TSF10H120C TSF10H150C Reverse current @ rated VR (2) per diode IF = 5A, TJ = 25°C TSF10H200C TSF10H100C TSF10H120C TSF10H150C TSF10H200C TSF10H100C TSF10H120C TSF10H150C TSF10H200C IF = 5A, TJ = 125°C TJ = 25°C TYP MAX UNIT 0.62 0.70 V 0.66 0.74 V 0.78 0.88 V 0.81 0.91 V 0.55 0.63 V 0.58 0.66 V 0.64 0.72 V 0.67 0.75 V - 100 µA - 15 mA - 10 mA IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING TSF10HxC ITO-220AB 50 / Tube Notes: 1. “x” defines voltage from 100V(TSF10H100C) to 200V(TSF10H200C) 2 Version: I2105 TSF10H100C – TSF10H200C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 TSF10H100C 10 CAPACITANCE (pF) 8 6 4 100 TSF10H120C TSF10H150C 10 TSF10H200C 2 0 f=1.0MHz Vsig=50mVp-p 1 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) 100 10 TJ=150°C 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 100 10 TSF10H100C 10 UF1DLW 1 TJ=150°C TJ=125°C T =125°C J TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.1 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.3 0.4 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) TSF10H120C TJ=150°C 1 TJ=125°C TJ=100°C 0.01 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 0.5 0.6 0.7 0.7 0.8 0.9 0.9 1 1.1 1.1 1.2 1.1 1.2 Fig.6 Typical Forward Characteristics 100 0.001 0.5 FORWARD VOLTAGE (V) Fig.5 Typical Reverse Characteristics 0.1 TJ=25°C 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 100 Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.3 Typical Reverse Characteristics TSF10H100C 10 REVERSE VOLTAGE (V) (A) 25 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 3 100 10 TSF10H120C 10 1 UF1DLW TJ=150°C TJ=125°C TJ=125°C TJ=25°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.1 0.001 0.3 (A) AVERAGE FORWARD CURRENT (A) 12 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.4 0.5 0.7 0.9 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) 1.1 1 Version: I2105 TSF10H100C – TSF10H200C Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) 1 TJ=125°C 0.1 TJ=100°C 0.01 0.001 TJ=25°C 0.0001 20 30 40 50 60 70 80 90 100 100 10 10 TSF10H150C UF1DLW 1 TJ=150°C TJT =125°C J=125°C TJ=25°C 0.1 TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.2 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.4 0.4 0.5 0.6 0.6 0.7 0.8 0.8 0.9 1 1.0 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.9 Typical Reverse Characteristics Fig.10 Typical Forward Characteristics 10 TSF10H200C 1 TJ=150°C 0.1 TJ=125°C 0.01 TJ=100°C 0.001 TJ=25°C 0.0001 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) (A) TJ=150°C 1.1 1.2 1.1 1.2 100 10 TSF10H200C 10 UF1DLW T =150°C 1 J TJ=125°C TJ=125°C 0.1 TJ=25°C (A) TSF10H150C INSTANTANEOUS FORWARD CURRENT (A) 10 10 INSTANTANEOUS REVERSE CURRENT (mA) Fig.8 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.7 Typical Reverse Characteristics TJ=25°C 1 TJ=100°C 0.01 0.1 0.001 0.2 Pulse width 300μs 1% duty cycle Pulse width 0.3 0.4 0.4 0.5 0.6 0.6 0.8 0.7 0.8 1.0 0.9 1 1.2 FORWARD VOLTAGE (V) 4 Version: I2105 TSF10H100C – TSF10H200C Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AB MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: I2105 TSF10H100C – TSF10H200C Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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