MBRS1035CTHMNG

MBRS1035CT – MBRS10150CT Taiwan Semiconductor 10A, 35V - 150V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 10 A VRRM 35 - 150 V IFSM 120 A TJ MAX 150 APPLICATIONS °C 2 Package TO-263AB (D PAK) Configuration Dual dies ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters MECHANICAL DATA ● ● ● ● ● ● 2 Case: TO-263AB (D PAK) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37g (approximately) 2 TO-263AB (D PAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Peak repetitive reverse (1) surge current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Critical rate of rise of offstate voltage Notes: 1. tp = 2.0μs, 1.0KHz MBRS SYMBOL 1035 CT MBRS 1035CT MBRS 1045 CT MBRS 1045CT MBRS 1050 CT MBRS 1050CT MBRS 1060 CT MBRS 1060CT MBRS MBRS MBRS 1090 10100 10150 UNIT CT CT CT MBRS MBRS MBRS 1090CT 10100CT 10150CT VRRM 35 45 50 60 90 100 150 V VR(RMS) 24 31 35 42 63 70 105 V IF 10 A IFSM 120 A IRRM 1 A IFRM 10 A dv/dt 10,000 V/μs 1 Version: M2103 MBRS1035CT – MBRS10150CT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBRS MBRS MBRS MBRS MBRS MBRS SYMBOL 1035 1045 1050 1060 1090 10100 CT CT CT CT CT CT PARAMETER MBRS 10150 UNIT CT Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 2 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per diode CONDITIONS (1) MBRS1035CT MBRS1045CT MBRS1050CT MBRS1060CT MBRS1090CT MBRS10100CT MBRS10150CT MBRS1035CT MBRS1045CT MBRS1050CT MBRS1060CT MBRS1090CT MBRS10100CT MBRS10150CT MBRS1035CT MBRS1045CT MBRS1050CT MBRS1060CT MBRS1090CT MBRS10100CT MBRS10150CT MBRS1035CT MBRS1045CT MBRS1050CT MBRS1060CT MBRS1090CT MBRS10100CT MBRS10150CT SYMBOL IF = 5A, TJ = 25°C IF = 10A, TJ = 25°C VF IF = 5A, TJ = 125°C IF = 10A, TJ = 125°C 2 TYP MAX UNIT - 0.70 V - 0.80 V - 0.85 V - 0.88 V - 0.80 V - 0.90 V - 0.95 V - 0.98 V - 0.57 V - 0.65 V - 0.75 V - 0.78 V - 0.67 V - 0.75 V - 0.85 V - 0.88 V Version: M2103 MBRS1035CT – MBRS10150CT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Reverse current @ rated VR (2) per diode CONDITIONS MBRS1035CT MBRS1045CT MBRS1050CT MBRS1060CT TJ = 25°C MBRS1090CT MBRS10100CT MBRS10150CT MBRS1035CT MBRS1045CT MBRS1050CT MBRS1060CT TJ = 100°C MBRS1090CT MBRS10100CT MBRS10150CT MBRS1035CT MBRS1045CT MBRS1050CT MBRS1060CT TJ = 125°C MBRS1090CT MBRS10100CT MBRS10150CT SYMBOL IR TYP MAX UNIT - 100 µA - 15 mA - 10 mA - - mA - - mA - 5 mA Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) MBRS10xCT PACKAGE 2 TO-263AB (D PAK) PACKING 800 / Tape & Reel Notes: 1. “x” defines voltage from 35V(MBRS1035CT) to 150V(MBRS10150CT) 3 Version: M2103 MBRS1035CT – MBRS10150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 900 800 CAPACITANCE (pF) 10 5 700 600 500 400 300 200 f=1.0MHz Vsig=50mVp-p 100 0 0 25 50 75 100 125 150 0.1 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) TJ=125°C TJ=75°C 0.1 0.01 TJ=25°C 0.001 10 20 30 40 50 60 70 80 90 100 100 10 MBRS1035CT - 1045CT 10 MBRS1050CT - 1060CT UF1DLW 1 MBRS1090CT - 10100CT TJ=125°C TJ=25°C 0.1 1 MBRS10150CT 0.01 Pulse width 300μs 1% duty cycle Pulse width 0.1 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 150 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 100 1 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 10 10 (A) AVERAGE FORWARD CURRENT (A) 15 8.3ms single half sine wave 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: M2103 1.2 MBRS1035CT – MBRS10150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: M2103 MBRS1035CT – MBRS10150CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) SUGGESTED PAD LAYOUT MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: M2103 MBRS1035CT – MBRS10150CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: M2103