MBR2535CTHC0G

MBR2535CT – MBR25150CT Taiwan Semiconductor 25A, 35V - 150V Schottky Barrier Rectifier FEATURES ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Low power loss, high efficiency Guard ring for overvoltage protection High surge current capability RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converters PARAMETER VALUE UNIT IF 25 A VRRM 35 - 150 V IFSM 200 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies MECHANICAL DATA ● ● ● ● ● ● ● Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.90g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 2535 2545 2550 2560 2590 25100 25150 UNIT CT CT CT CT CT CT CT MBR MBR MBR MBR MBR MBR MBR Marking code on the device 2535 2545 2550 2560 2590 25100 25150 CT CT CT CT CT CT CT Repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 V Reverse voltage, total rms value VR(RMS) 24 31 35 42 63 70 105 V Forward current IF 25 A Surge peak forward current, 8.3ms single half sine wave IFSM 200 A superimposed on rated load (1) Peak repetitive reverse surge current IRRM 1 0.5 A Peak repetitive forward current IFRM 25 A (Rated VR, Square wave, 20KHz) Critical rate of rise of off-state voltage dv/dt 10,000 V/μs Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C Notes: 1. tp = 2.0μs, 1.0KHz 1 Version: K2104 MBR2535CT – MBR25150CT Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 1 °C/W Junction-to-case thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per (1) diode Reverse current @ rated (2) VR per diode CONDITIONS MBR2535CT MBR2545CT MBR2550CT MBR2560CT MBR2590CT MBR25100CT MBR25150CT MBR2535CT MBR2545CT MBR2550CT MBR2560CT MBR2590CT MBR25100CT MBR25150CT MBR2535CT MBR2545CT MBR2550CT MBR2560CT MBR2590CT MBR25100CT MBR25150CT MBR2535CT MBR2545CT MBR2550CT MBR2560CT MBR2590CT MBR25100CT MBR25150CT MBR2535CT MBR2545CT MBR2550CT MBR2560CT MBR2590CT MBR25100CT MBR25150CT MBR2535CT MBR2545CT MBR2550CT MBR2560CT MBR2590CT MBR25100CT MBR25150CT SYMBOL IF = 12.5A, TJ = 25°C IF = 25.0A, TJ = 25°C VF IF = 12.5A, TJ = 125°C IF = 25.0A, TJ = 125°C TYP MAX UNIT - - V - 0.75 V - 0.85 V - 0.95 V - 0.82 V - - V - 0.92 V - 1.02 V - - V - 0.65 V - 0.75 V - 0.92 V - 0.73 V - - V - 0.88 V - 0.98 V - 200 µA - 100 µA - 15 mA - 10 mA - 7.5 mA - 5 mA TJ = 25°C IR TJ = 125°C Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms 2 Version: K2104 MBR2535CT – MBR25150CT Taiwan Semiconductor ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING MBR25xCT TO-220AB 50 / Tube MBR25xCTH TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 35V(MBR2535CT) to 150V(MBR25150CT) 2. “H” means AEC-Q101 qualified 3 Version: K2104 MBR2535CT – MBR25150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 10000 25 CAPACITANCE (pF) 20 15 10 MBR2535CT-2545CT 1000 MBR2550CT - 25150CT 5 f=1.0MHz Vsig=50mVp-p 100 0 25 50 75 100 125 0.1 150 1 CASE TEMPERATURE (°C) INSTANTANEOUS FORWARD CURRENT (A) MBR2535CT-2545CT MBR2550CT-25150CT TJ=125°C 1 TJ=25°C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 100 10 10 1 TJ=125°C UF1DLW TJ=125°C TJ=25°C 0.1 TJ=25°C MBR2535CT-2540CT MBR2550CT-2560CT MBR2590CT-25150CT 1 0.01 0.1 0.001 0.0 Pulse width 300μs 1% duty cycle Pulse width 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.2 0.4 0.6 0.4 0.5 0.6 0.8 0.7 1.0 0.8 1.2 0.9 1.4 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 225 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) Fig.4 Typical Forward Characteristics 1000 10 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 100 10 (A) AVERAGE FORWARD CURRENT (A) 30 200 8.3ms single half sine wave 175 150 125 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: K2104 1.2 MBR2535CT – MBR25150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Typical Transient Thermal Impedance TRANSIENT THERMAL IMPEDANCE (°C/W) 10 1 0.1 0.01 0.1 1 10 100 PULSE DURATION (s) 5 Version: K2104 MBR2535CT – MBR25150CT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM 6 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: K2104 MBR2535CT – MBR25150CT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: K2104