0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
HERAF1006G C0G

HERAF1006G C0G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    TO220-2

  • 描述:

    DIODE GEN PURP 600V 10A ITO220AC

  • 数据手册
  • 价格&库存
HERAF1006G C0G 数据手册
HERAF1001G – HERAF1008G Taiwan Semiconductor 10A, 50V - 1000V High Efficient Rectifier FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability UL Recognized File # E-326243 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 10 A VRRM 50 - 1000 V IFSM 150 A TJ MAX 150 °C Package ITO-220AC Configuration Single die APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application MECHANICAL DATA ● ● ● ● ● ● ● Case: ITO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N⋅m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.70g (approximately) ITO-220AC ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature Storage temperature HERAF 1001G HERAF 1001G HERAF 1002G HERAF 1002G HERAF 1003G HERAF 1003G HERAF 1004G HERAF 1004G HERAF 1005G HERAF 1005G HERAF 1006G HERAF 1006G HERAF 1007G HERAF 1007G VRRM 50 100 200 300 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V SYMBOL HERAF UNIT 1008G HERAF 1008G IF 10 A IFSM 150 A TJ -55 to +150 °C TSTG -55 to +150 °C 1 Version: I2105 HERAF1001G – HERAF1008G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJC 2 °C/W Junction-to-case resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage (1) Reverse current @ rated VR Junction capacitance Reverse recovery time CONDITIONS HERAF1001G HERAF1002G HERAF1003G HERAF1004G I = 10A, TJ = 25°C HERAF1005G F HERAF1006G HERAF1007G HERAF1008G TJ = 25°C (2) SYMBOL TJ = 125°C HERAF1001G HERAF1002G HERAF1003G HERAF1004G 1MHz, VR = 4.0V HERAF1005G HERAF1006G HERAF1007G HERAF1008G HERAF1001G HERAF1002G HERAF1003G HERAF1004G IF = 0.5A, IR = 1.0A HERAF1005G Irr = 0.25A HERAF1006G HERAF1007G HERAF1008G VF IR TYP MAX UNIT - 1.0 V - 1.3 V - 1.7 V - 10 µA - 400 µA 80 - pF 60 - pF - 50 ns - 80 ns CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING HERAF10xG ITO-220AC 50 / Tube HERAF10xGH ITO-220AC 50 / Tube Notes: 1. “x” defines voltage from 50V(HERAF1001G) to 1000V(HERAF1008G) 2. “H” means AEC-Q101 qualified 2 Version: I2105 HERAF1001G – HERAF1008G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 10 CAPACITANCE (pF) 8 6 4 HERAF1001G-1005G 100 HERAF1006G-1008G 10 2 f=1.0MHz Vsig=50mVp-p 1 0 25 50 75 100 125 1 150 10 CASE TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 1000 TJ=125°C 100 10 TJ=25°C 1 20 30 40 50 60 70 80 90 100 100 10 1 HERAF1001G-1004G UF1DLW 10 TJ=125°C TJ=25°C 0.1 HERAF1005G 1 0.01 HERAF1006G-1008G 0.001 0.1 0.5 0.40.3 0.60.4 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width Pulse width 300μs 1% duty cycle 0.6 1 0.7 1.2 0.8 1.4 0.9 1.6 11.8 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 180 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 10 100 (A) AVERAGE FORWARD CURRENT (A) 12 150 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: I2105 1.2 HERAF1001G – HERAF1008G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: I2105 HERAF1001G – HERAF1008G Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS ITO-220AC MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: I2105 HERAF1001G – HERAF1008G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: I2105
HERAF1006G C0G 价格&库存

很抱歉,暂时无法提供与“HERAF1006G C0G”相匹配的价格&库存,您可以联系我们找货

免费人工找货