0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
RS3J M6G

RS3J M6G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    DO214AB

  • 描述:

    DIODE GEN PURP 600V 3A DO214AB

  • 详情介绍
  • 数据手册
  • 价格&库存
RS3J M6G 数据手册
RS3A – RS3M Taiwan Semiconductor 3A, 50V - 1000V Fast Recovery Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Glass passivated chip junction Ideal for automated placement Fast switching for high efficiency High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● ● PARAMETER VALUE UNIT IF 3 A VRRM 50 - 1000 V IFSM 100 A TJ MAX 150 °C Package DO-214AB (SMC) Configuration Single die DC to DC converter Switching mode converters and inverters Lighting application Snubber General purpose MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.210g (approximately) DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL RS3A RS3B RS3D RS3G RS3J RS3K RS3M UNIT Marking code on the device RS3A RS3B RS3D RS3G RS3J RS3K RS3M Repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 35 70 140 280 420 560 700 V Forward current Peak forward surge current, 8.3ms single half sine wave superimposed on rated load Junction temperature IF 3 A IFSM 100 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: L2102 RS3A – RS3M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance RӨJL 15 °C/W Junction-to-ambient thermal resistance RӨJA 50 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR IF = 3A, TJ = 25°C TJ = 25°C (2) Reverse recovery time TYP MAX UNIT VF - 1.3 V - 10 µA - 250 µA - 150 ns - 250 ns - 500 ns IR TJ = 125°C RS3A RS3B RS3D RS3G RS3J RS3K RS3M SYMBOL IF = 0.5A, IR = 1.0A, Irr = 0.25A trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING RS3x DO-214AB (SMC) 3,000 / Tape & Reel Notes: 1. “x” defines voltage from 50V(RS3A) to 1000V(RS3M) 2 Version: L2102 RS3A – RS3M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 1000 3 CAPACITANCE (pF) 2 1 100 f=1.0MHz Vsig=50mVp-p 10 0 25 50 75 100 125 1 150 10 LEAD TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=125°C TJ=75°C 1 TJ=25°C 0.1 10 20 30 40 50 60 70 80 90 100 10 10 UF1DLW 1 TJ=125°C TJ=125°C 10.1 TJ=40°C TJ=25°C TJ=25°C 0.01 0.1 0.001 0.4 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs 1% duty cycle Pulse width 0.6 0.4 0.8 0.5 1.0 1.2 1.4 0.6 0.7 0.8 0.9 1.6 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 125 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 10 100 (A) AVERAGE FORWARD CURRENT (A) 4 8.3ms single half sine wave 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: L2102 1.2 RS3A – RS3M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: L2102 RS3A – RS3M Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) SUGGESTED PAD LAYOUT MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Version: L2102 RS3A – RS3M Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: L2102
RS3J M6G
物料型号:RS3A-RS3M

器件简介: - 台湾半导体生产的快恢复表面贴装整流器 - 具有玻璃钝化芯片结构 - 适合自动化放置 - 快速开关以提高效率 - 高浪涌电流能力 - 符合RoHS标准和无卤素标准

引脚分配: - 封装类型为DO-214AB(SMC) - 极性通过阴极带标识

参数特性: - 正向电流(IF):3A - 反向峰值重复电压(VRRM):50V至1000V - 正向浪涌电流峰值(IFSM):100A - 最大结温(TJ MAX):150°C - 封装:DO-214AB(SMC) - 配置:单芯片

功能详解: - 适用于直流到直流转换器、开关模式转换器和逆变器、照明应用、消振器和通用用途

应用信息: - 用于多种电子设备,包括电源转换和照明系统

封装信息: - 封装尺寸符合DO-214AB(SMC)标准 - 重量约为0.210g - 引脚为亚光锡镀层,可焊接

绝对最大额定值和电气规格提供了详细的技术参数,包括反向电压、正向电流、反向恢复时间等。

订购信息提供了订购代码、封装和包装信息。

特性曲线和测试电路图展示了器件的电气特性。

封装轮廓尺寸和建议的焊盘布局为设计提供了参考。

标记图说明了产品的标记方式。

注意事项提醒用户产品规格可能会变更,且不承担因错误或不准确信息引起的责任。同时,强调产品不适用于医疗、救生或维持生命的应用。
RS3J M6G 价格&库存

很抱歉,暂时无法提供与“RS3J M6G”相匹配的价格&库存,您可以联系我们找货

免费人工找货