0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
FR101G R1G

FR101G R1G

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    DO-204AL

  • 描述:

    DIODE GEN PURP 50V 1A DO204AL

  • 详情介绍
  • 数据手册
  • 价格&库存
FR101G R1G 数据手册
FR101G – FR107G Taiwan Semiconductor 1A, 50V - 1000V Fast Recovery Rectifier FEATURES ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified available Glass passivated chip junction High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF 1 A VRRM 50 - 1000 V IFSM 30 A TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single die APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● General purpose MECHANICAL DATA ● ● ● ● ● ● Case: DO-204AL (DO-41) Molding compound meets UL 94V-0 flammability rating Terminal: Pure tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.340g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) FR FR FR FR FR FR FR UNIT 101G 102G 103G 104G 105G 106G 107G FR FR FR FR FR FR FR 101G 102G 103G 104G 105G 106G 107G 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V Forward current Surge peak forward current, 8.3ms single half sine wave superimposed on rated load Junction temperature IF 1 A IFSM 30 A TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: H2104 FR101G – FR107G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT RӨJA 70 °C/W Junction-to-ambient thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage CONDITIONS (1) Reverse current @ rated VR IF = 1A, TJ = 25°C TJ = 25°C (2) Reverse recovery time TYP MAX UNIT VF - 1.3 V - 5 µA - 100 µA 10 - pF - 150 ns - 250 ns - 500 ns IR TJ = 125°C Junction capacitance SYMBOL 1MHz, VR = 4.0V FR101G FR102G FR103G FR104G IF = 0.5A, IR = 1.0A, I = 0.25A FR105G rr FR106G FR107G CJ trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING FR1xG DO-204AL (DO-41) 5,000 / Tape & Reel FR1xG A0G DO-204AL (DO-41) 3,000 / Ammo box FR1xGH DO-204AL (DO-41) 5,000 / Tape & Reel FR1xGHA0G DO-204AL (DO-41) 3,000 / Ammo box Notes: 1. “x” defines voltage from 50V (FR101G) to 1000V (FR107G) 2. “H” means AEC-Q101 qualified 2 Version: H2104 FR101G – FR107G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 CAPACITANCE (pF) 1 10 f=1.0MHz Vsig=50mVp-p 1 0 25 50 75 100 125 1 150 10 AMBIENT TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS FORWARD CURRENT (A) 100 TJ=125°C TJ=75°C 1 TJ=25°C 0.1 10 20 30 40 50 60 70 80 90 100 1010 UF1DLW 1 TJ=125°C TJ=25°C 10.1 0.01 0.1 0.001 0.8 0.3 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Pulse width 300μs 1% duty cycle Pulse width 1.0 0.4 0.5 1.2 0.6 0.7 1.4 0.8 0.9 1.6 1 1.1 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 35 PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (µA) Fig.3 Typical Reverse Characteristics 10 100 (A) AVERAGE FORWARD CURRENT (A) 2 30 8.3ms single half sine wave 25 20 15 10 5 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: H2104 1.2 FR101G – FR107G Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: H2104 FR101G – FR107G Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-204AL (DO-41) MARKING DIAGRAM 5 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Version: H2104 FR101G – FR107G Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: H2104
FR101G R1G
PDF文档中提到的物料型号为FR101G至FR107G,由台湾半导体公司生产。

这些是1A,50V至1000V的快速恢复整流器,具有以下特点: - 通过AEC-Q101认证 - 玻璃钝化芯片结 - 高电流能力,低正向电压降(VF) - 高可靠性 - 高浪涌电流能力 - 低功耗,高效率 - 符合RoHS标准 - 根据IEC 61249-2-21无卤素

应用领域包括直流到直流转换器、开关模式转换器和逆变器以及通用用途。


机械数据包括: - 封装类型:DO-204AL (DO-41) - 模塑化合物符合UL 94V-0阻燃等级 - 端子:纯锡镀铅,可按J-STD-002焊接 - 符合JESD 201类2须测试 - 极性:由阴极带指示

关键参数包括: - 正向电流(IF):1A - 反向电压(VRRM):50-1000V - 浪涌正向电流(IFSM):30A - 最大结温(TJMAX):150°C - 封装:DO-204AL (DO-41) - 配置:单芯片

绝对最大额定值和电气规格详细列出了不同型号的反向电压、正向电流、浪涌正向电流、结温和存储温度等参数。


热性能参数包括结到环境的热阻(ReJA):70°C/W。


订购信息提供了不同电压等级和AEC-Q101认证版本的订购代码、封装类型和包装方式。


特性曲线图展示了正向电流降额曲线、典型结电容、典型反向特性、典型正向特性和最大非重复正向浪涌电流等。


封装外形尺寸和标记图提供了详细的尺寸信息和标记代码说明。


文档最后提醒,产品规格如有变更,恕不另行通知,且产品不适用于医疗、救生或维持生命等应用。
FR101G R1G 价格&库存

很抱歉,暂时无法提供与“FR101G R1G”相匹配的价格&库存,您可以联系我们找货

免费人工找货