SANGDEST
MICROELECTRONICS
SBRF2045
Green Products
Technical Data
Data Sheet N1111, Rev. A
SBRF2045 SCHOTTKY RECTIFIER
Applications:
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
150 ℃ TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm
SYMBOL
A
A1
A2
A3
b
b1
b2
c
D
E
e
e1
H1
L
L1
L2
L3
L4
ΦP1(上口)
ΦP2(下口)
Q
Θ1
Θ2
Θ3
Θ4
Θ5
MIN.
4.30
1.10
2.80
2.50
0.50
1.10
1.50
0.55
14.80
9.96
6.50
12.70
1.60
0.80
0.60
3.30
2.99
2.50
TYP.
4.50
1.30
3.00
2.70
0.60
1.20
1.60
0.60
15.00
10.16
2.55
5.10
6.70
13.20
1.80
1.00
0.80
1.10
3.50
3.19
2.70
5°
4°
10°
5°
5°
MAX.
4.70
1.50
3.20
2.90
0.75
1.35
1.75
0.75
15.20
10.36
6.90
13.70
2.00
1.20
1.00
1.50
3.70
3.39
2.90
ITO-220AC(HD)
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SBRF2045
Green Products
Technical Data
Data Sheet N1111, Rev. A
Marking Diagram:
Where XXXXX is YYWWL
SBR
F
20
45
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (20A)
= Reverse Voltage (45V)
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
ITO-220AB
(Pb-Free)
SBRF2045
Shipping
50pcs / tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Symbol
VRWM
Max. Average Forward Current
IF(AV)
Condition
50% duty cycle @TC = 105°C,
rectangular wave form
Max. Peak One Cycle
Non-Repetitive Surge Current
(per leg)
IFSM
8.3ms, half sine pulse
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
Max.
45
Units
V
20
A
252
A
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SBRF2045
Green Products
Technical Data
Data Sheet N1111, Rev. A
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop*
Max. Reverse Current (per
leg) *
Symbol
VF1
VF2
IR1
IR2
Max. Junction Capacitance
(per leg)
Repetitive peak reverse
current
Non-Repetitive Avalanche
Energy
Max. Voltage Rate of Change
*
CT
IRRM
EAS
dv/dt
Condition
@ 20 A, Pulse, TC = 25 °C
@ 20 A, Pulse, TC = 125 °C
@VR = rated VR
TC = 25 °C
@VR = rated VR
TC = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
tp = 2 µs square F= 1 kHz
TJ = 25 °C, IAS = 2 A,
L = 1mH
-
Max.
0.65
0.60
Units
V
V
1.0
mA
50.0
mA
900
pF
1
A
2
mJ
10,000
V/µs
Pulse Width < 300µs, Duty Cycle
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