BYC8X-600P,127

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors TO -22 0 F BYC8X-600P Hyperfast power diode 3 August 2015 Product data sheet 1. General description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits • • • • • • Fast switching Isolated plastic package Low leakage current Low reverse recovery current Low thermal resistance Reduces switching losses in associated MOSFET 3. Applications • • Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 600 V - - 8 A - - 16 A - - 91 A - - 100 A IF = 8 A; Tj = 25 °C; Fig. 6 - - 3.4 V IF = 8 A; Tj = 125 °C; Fig. 6 - 1.5 1.9 V IF = 8 A; Tj = 150 °C - 1.4 - V δ = 0.5 ; Th ≤ 75 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 IFRM repetitive peak forward δ = 0.5 ; tp = 25 µs; Th ≤ 75 °C; squarecurrent wave pulse IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 Static characteristics VF forward voltage Scan or click this QR code to view the latest information for this product BYC8X-600P NXP Semiconductors Hyperfast power diode Symbol Parameter Conditions Min Typ Max Unit IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; - 12 18 ns - 19 - ns Dynamic characteristics trr reverse recovery time Tj = 25 °C; Fig. 7 IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; Fig. 7 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline cathode Graphic symbol K mb A 001aaa020 2 A anode mb n.c. mounting base; isolated 1 2 TO-220F (SOD113) 6. Ordering information Table 3. Ordering information Type number BYC8X-600P Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack" SOD113 7. Marking Table 4. Marking codes Type number Marking code BYC8X-600P BYC8X-600P BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current δ = 0.5 ; Th ≤ 75 °C; square-wave - 8 A - 16 A - 91 A - 100 A pulse; Fig. 1; Fig. 2; Fig. 3 IFRM repetitive peak forward current δ = 0.5 ; tp = 25 µs; Th ≤ 75 °C; squarewave pulse IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 Tstg storage temperature -65 175 °C Tj junction temperature - 175 °C 003aaj898 24 Ptot (W) 003aaj899 20 δ=1 Ptot (W) 16 0.5 a = 1.57 2.2 16 0.2 1.9 2.8 12 4.0 0.1 8 8 4 0 Fig. 1. 0 4 8 IF(AV) (A) 0 12 Forward power dissipation as a function of average forward current; square waveform; maximum values BYC8X-600P Product data sheet Fig. 2. 0 4 6 IF(AV) (A) 8 Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 3 August 2015 2 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 003aaj901 12 IF(AV) (A) Fig. 3. IF IFSM (A) 75 °C 8 103 4 102 0 -50 0 50 100 BYC8X-600P 10 10-5 150 200 Th (°C) Average forward current as a function of heatsink temperature; maximum values Product data sheet 003aaj902 104 Fig. 4. t tp Tj(init) = 25 °C max 10-4 10-3 tp (s) 10-2 Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values All information provided in this document is subject to legal disclaimers. 3 August 2015 IFSM © NXP Semiconductors N.V. 2015. All rights reserved 4 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink without heatsink compound - - 7.2 K/W with heatsink compound; Fig. 5 - - 5.5 K/W - 60 - K/W Rth(j-a) thermal resistance from junction to ambient free air 001aaf257 10 Zth(j-h) (K/W) 1 10- 1 P δ= tp T 10- 2 tp 10- 3 10- 6 Fig. 5. 10- 5 10- 4 10- 3 10- 2 t T 10- 1 1 tp (s) 10 Transient thermal impedance from junction to heatsink as a function of pulse width 10. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free - - 2500 V Cisol isolation capacitance from cathode to external heatsink - 10 - pF BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 11. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 8 A; Tj = 25 °C; Fig. 6 - - 3.4 V IF = 8 A; Tj = 125 °C; Fig. 6 - 1.5 1.9 V IF = 8 A; Tj = 150 °C - 1.4 - V VR = 600 V; Tj = 25 °C - - 20 µA VR = 600 V; Tj = 125 °C - - 200 µA IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs; - 17 - nC - 90 - nC - 12 18 ns - 19 - ns - - 2.2 A - - 6 A Static characteristics VF IR forward voltage reverse current Dynamic characteristics Qr recovered charge Tj = 25 °C; Fig. 7 IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 125 °C; Fig. 7 trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; Fig. 7 IRM peak reverse recovery current IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 125 °C; Fig. 7 BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 003aaj903 16 IF IF (A) dlF dt 12 trr 8 (1) (2) time (3) 25 % Qr 4 IR 0 Fig. 6. 100 % IRM 003aac562 0 1 2 3 VF (V) 4 Fig. 7. Reverse recovery definitions; ramp recovery Forward current as a function of forward voltage BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 12. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 `full pack' SOD113 A A1 E z(2) P q m T(4) D HE L2 j(3) L1(1) k(3) Q L 1 b1 2 b w c e 0 5 10 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 b b1 c D E e 4.6 2.9 0.9 1.1 0.7 15.8 10.3 4.0 2.5 0.7 0.9 0.4 15.2 9.7 HE max 5.08 19.0 L2 L1(1) max j(3) k(3) L 2.7 0.6 14.4 3.3 1.7 0.4 13.5 2.8 0.5 m P Q 6.5 3.2 2.6 6.3 3.0 2.3 Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. 3. Dot lines area designs may vary. 4. Eject pin mark is for reference only. Outline version SOD113 Fig. 8. T(4) w z(2) 2.6 2.55 0.4 0.8 sod113_po References IEC q JEDEC JEITA European projection Issue date 07-06-08 15-08-28 2-lead TO-220F Package outline TO-220F (SOD113) BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 13. Legal information 13.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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BYC8X-600P Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 3 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 11 BYC8X-600P NXP Semiconductors Hyperfast power diode 14. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Isolation characteristics ........................................5 11 Characteristics ....................................................... 6 12 Package outline ..................................................... 8 13 13.1 13.2 13.3 13.4 Legal information ...................................................9 Data sheet status ................................................. 9 Definitions .............................................................9 Disclaimers ...........................................................9 Trademarks ........................................................ 10 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 August 2015 BYC8X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 3 August 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 11