BYV29B-600,118

BYV29B-600 Rectifier diode ultrafast Rev. 3 — 15 June 2018 Product data sheet 1. Product profile 1.1 General description Ultra-fast, epitaxial rectifier diode in a surface mount plastic package. Product availability: BYV29B-600 in SOT404 (D2PAK). 1.2 Features and benefits  Low forward voltage  Soft recovery characteristic  Fast switching  High thermal cycling performance. 1.3 Applications  Switched-mode power supplies  Low loss rectification. 1.4 Quick reference data  VR  600 V  IF(AV)  9 A  VF  1.03 V  trr  60 ns 2. Pinning information Table 1. Pinning - SOT404 (D2PAK), simplified outline and symbol Pin Description 1 no connection 2 cathode (k) 3 anode (a) mb mounting base; connected to cathode (k) Simplified outline mb K [1] A 001aaa020 SOT404 (D2PAK) [1] Symbol It is not possible to make connection to pin 2 of the SOT404 package. BYV29B-600 WeEn Semiconductors Rectifier diode ultrafast 3. Ordering information Table 2. Ordering information Type number BYV29B-600 Package Name Description Version D2PAK plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Min Max Unit VRRM Symbol Parameter repetitive peak reverse voltage Conditions - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage - 600 V - 9 A - 18 A tp = 10 ms - 70 A tp = 8.3 ms - 77 A IF(AV) average forward current square wave;  = 0.5; Tmb  120 C IFRM repetitive peak forward current square wave; t = 25 s;  = 0.5; Tmb  120 C IFSM non-repetitive peak forward current sinusoidal; with reapplied VRRM(max) [1] Tstg storage temperature 40 +150 C Tj junction temperature - +150 C [1] Neglecting switching and reverse current losses. BYV29B-600 Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 11 BYV29B-600 WeEn Semiconductors Rectifier diode ultrafast 003aaa446 20 Tmb(max) PF (W) (°C) δ=1 PF (W) a = 1.57 16 112.5 15 003aaa447 20 100 1.9 2.8 12 125 δ = 0.2 δ = 0.1 110 2.2 δ = 0.5 10 100 Tmb(max) (°C) P δ= 120 4 tp 8 130 4 140 T 5 137.5 t tp T 0 4 0 8 12 IF(AV) (A) 16 150 0 Square current waveform Product data sheet 8 IF(AV) (A) 12 I F  RMS  a = ------------------I F  AV  Maximum forward power dissipation (square current waveform) as a function of average forward current. BYV29B-600 4 Sinusoidal current waveform I F  AV  = I F  RMS    Fig 1. 150 0 Fig 2. Maximum forward power dissipation (sinusoidal current waveform) as a function of average forward current. All information provided in this document is subject to legal disclaimers. 15 June 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 11 BYV29B-600 WeEn Semiconductors Rectifier diode ultrafast 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Figure 3 - - 2.5 K/W Rth(j-a) thermal resistance from junction to ambient - 50 - K/W in free air 5.1 Transient thermal impedance 003aaa453 10 Zth(j-mb) (K/W) 1 10-1 P 10-2 t tp 10-3 10-6 Fig 3. 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Transient thermal impedance from junction to mounting base as a function of pulse duration. BYV29B-600 Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 11 BYV29B-600 WeEn Semiconductors Rectifier diode ultrafast 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 150 C; Figure 4 - 0.9 1.03 V Tj = 25 C; Figure 4 - 1.05 1.25 V - 1.3 1.45 V Tj = 100 C - 0.1 0.35 mA Tj = 25 C - 2 50 A Static characteristics VF forward voltage IF = 8 A IF = 20 A IR reverse current VR = VRRM Dynamic characteristics Cd diode capacitance f = 1 MHz; VR = 100 V; Figure 8 - 7 - pF Qrr reverse recovery charge IF = 2 A; VR  30 V; dIF/dt = 20 A/s; Figure 7 - 40 70 nC trr reverse recovery time IF = 1 A; VR  30 V; dIF/dt = 100 A/s; Figure 5 - 50 60 ns Irrm peak reverse recovery current IF = 10 A; VR  30 V; dIF/dt = 50 A/s Tj = 100 C; Figure 6 - 3 5.5 A Vfr forward recovery voltage IF = 10 A; dIF/dt = 10 A/s - 3.2 - V BYV29B-600 Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 11 BYV29B-600 WeEn Semiconductors Rectifier diode ultrafast 003aaa450 36 Tj = 150 °C Tj = 25 °C IF (A) 003aaa448 103 trr (ns) IF = 10 A 24 16 102 typ max IF = 1 A 8 Tj = 25 °C Tj = 150 °C 0 Fig 4. 0 0.4 1.2 0.8 1.6 VF (V) 10 2 Forward current as a function of forward voltage; typical values. Fig 5. 003aaa449 10 10 -dIF/dt (A/μs) Maximum reverse recovery time as a function of rate of change of forward current. 003aaa452 103 IF = 10 A Qrr (nC) Irrm (A) IF = 10 A 102 1 IF = 2 A IF = 1 A 10-1 10 25 °C 150 °C Tj = 25 °C Tj = 100 °C 10-2 1 1 Fig 6. 102 10 -dIF/dt (A/μs) 102 1 Reverse current as a function of rate of change of forward current; typical values. BYV29B-600 Product data sheet Fig 7. -dIF/dt (A/μs) 102 Maximum reverse recovery charge as a function of rate of change of forward current. All information provided in this document is subject to legal disclaimers. 15 June 2018 10 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 11 BYV29B-600 WeEn Semiconductors Rectifier diode ultrafast 003aaa451 102 Cd (pF) 10 1 1 10 102 VR (V) 103 f = 1 MHz Fig 8. Diode capacitance as a function of reverse voltage; typical values. BYV29B-600 Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 11 BYV29B-600 WeEn Semiconductors Rectifier diode ultrafast 7. Package outline Fig 9. SOT404 (D2PAK). BYV29B-600 Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 11 BYV29B-600 WeEn Semiconductors Rectifier diode ultrafast 8. Revision history Table 6. Revision history Document ID Release date Data sheet status Change notice Supersedes BYV29B_600 v.2 20110914 Product data sheet - BYV29B_600 v.1 (9397 750 11884) Modifications: BYV29B_600 v.1 (9397 750 11884) BYV29B-600 Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version. 20030811 Product data - All information provided in this document is subject to legal disclaimers. 15 June 2018 - © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 11 BYV29B-600 WeEn Semiconductors Ultrafast power diode Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 9. Legal information Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BYV29B-600 Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. 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All rights reserved 10 / 11 BYV29B-600 WeEn Semiconductors Ultrafast power diode Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BYV29B-600 Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 11