BYR29-800,127

DISCRETE SEMICONDUCTORS DATA SHEET BYR29 series Rectifier diodes ultrafast Product specification September 2018 WeEn Semiconductors Product specification Rectifier diodes ultrafast BYR29 series FEATURES SYMBOL QUICK REFERENCE DATA VR = 500 V/ 600 V/ 700 V / 800 V • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance k a VF ≤ 1.5 V 001aaa020 IF(AV) = 8 A trr ≤ 75 ns GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYR29 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN SOD59 (TO220AC) 1 cathode 2 anode tab mb DESCRIPTION cathode 1 2 TO-220AC (SOD59) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VRRM VRWM VR Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage - IF(AV) Average forward current1 - 8 A - 16 A - 60 66 A A -40 - 150 150 ˚C ˚C BYR29 IFRM IFSM Tstg Tj square wave; δ = 0.5; Tmb ≤ 115 ˚C Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 115 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRRM(max) Storage temperature Operating junction temperature MAX. -500 500 500 500 -600 600 600 600 UNIT -700 700 700 700 -800 800 800 800 V V V THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS in free air. MIN. TYP. MAX. UNIT - - 2.5 K/W - 60 - K/W 1 Neglecting switching and reverse current losses September 2018 1 Rev 1.400 WeEn Semiconductors Product specification Rectifier diodes ultrafast BYR29 series ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs Reverse recovery charge trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 8 A; Tj = 150˚C IF = 20 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100 ˚C IF = 10 A; dIF/dt = 10 A/µs I dI F 20 F Q V V µA mA nC - 60 75 ns - - 6 A - 5.0 - V Tmb(max) / C BYR29 100 D = 1.0 15 112.5 0.5 s 10% 0.2 10 100% 125 0.1 tp I 5 D= tp T 0 0 2 4 6 IF(AV) / A 137.5 t T rrm Fig.1. Definition of trr, Qs and Irrm I UNIT 1.50 1.95 10 0.2 200 rr time I MAX. 1.07 1.75 1.0 0.1 150 Vo = 1.26 V dt R TYP. - Rs = 0.03 Ohms t I PF / W MIN. 8 150 12 10 Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x √D. 15 F PF / W Tmb(max) / C BYR29 Vo = 1.26 V a = 1.57 Rs = 0.03 Ohms 2.2 10 120 1.9 2.8 time 130 4 VF 5 140 V fr VF 0 time 1 2 3 4 IF(AV) / A 5 6 7 150 8 Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.2. Definition of Vfr September 2018 0 2 Rev 1.400 WeEn Semiconductors Product specification Rectifier diodes ultrafast BYR29 series trr / ns 1000 30 IF=10 A 25 1A 100 BYR29 IF / A Tj = 25 C Tj = 150 C 20 15 max typ 10 10 Tj = 25 C Tj = 100 C 1 1 5 0 100 10 dIF/dt (A/us) Fig.5. Maximum trr at Tj = 25˚C and 100˚C. 10 0 0.5 1 1.5 VF / V 2 2.5 3 Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj Irrm / A 1000 Qs / nC IF=10A IF = 10A 1 2A IF=1A 100 0.1 Tj = 25 C Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 10 100 1.0 Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C. 10 -dIF/dt (A/us) 100 Fig.8. Maximum Qs at Tj = 25˚C 10 Transient thermal impedance, Zth j-mb (K/W) 1 0.1 PD 0.01 0.001 1us tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29 10s Fig.9. Transient thermal impedance Zth = f(tp) September 2018 3 Rev 1.400 WeEn Semiconductors Product specification Rectifier diodes ultrafast BYR29 series MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59 A E A1 P q D1 D H Q b1 L 1 2 c b e 0 5 Dimensions Unit mm max nom min 10 mm scale A A1 b b1(1) c D D1 E 4.7 1.40 0.95 1.7 0.65 15.8 6.8 10.30 4.3 1.15 0.70 1.3 0.45 15.6 6.4 9.65 e H 5.08 (REF) L P Q q 16.25 15.0 3.80 2.6 2.9 15.70 12.5 3.65 2.2 2.7 Note 1. Protruded dambar are included in the dimension. Outline version SOD59 September 2018 sod059_po References IEC JEDEC European projection JEITA Issue date 09-08-25 12-11-27 2-lead TO-220AC 4 Rev 1.400 WeEn Semiconductors Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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