BYC5X-600,127

BYC5X-600 Hyperfast power diode Rev. 02 — 29 August 2018 Product data sheet 1. Product profile 1.1 General description Hyperfast, epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package. 1.2 Features n Extremely fast switching n Low reverse recovery current n Reduces switching loss in associated MOSFET n Low thermal resistance n Isolated package 1.3 Applications n Half-bridge or full-bridge switched-mode n Continuous Current Mode (CCM) Power power supplies Factor Correction (PFC) n Half-bridge lighting ballasts 1.4 Quick reference data n VRRM ≤ 600 V n VF = 1.40 V (typ) n IF(AV) ≤ 5 A n trr = 19 ns (typ) 2. Pinning information Table 1. Pinning Pin Description 1 cathode (k) 2 anode (a) mb mounting base; isolated Simplified outline Symbol k mb a 001aaa020 1 2 SOD113 (2-lead TO-220F) BYC5X-600 WeEn Semiconductors Hyperfast power diode 3. Ordering information Table 2. Ordering information Type number BYC5X-600 Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOD113 2-lead TO-220 ‘full pack’ 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage square waveform; δ = 1.0; Th ≤ 100 °C - 500 V IF(AV) average forward current square waveform; δ = 0.5; Th ≤ 87 °C - 5 A IFRM repetitive peak forward current square waveform; δ = 0.5; Th ≤ 87 °C - 10 A IFSM non-repetitive peak forward current t = 10 ms; sinusoidal waveform - 40 A t = 8.3 ms; sinusoidal waveform - 44 A Tstg storage temperature −40 +150 °C Tj junction temperature - 150 °C BYC5X-600_2 Product data sheet Conditions All information provided in this document is subject to legal disclaimers. 29 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 of 9 BYC5X-600 WeEn Semiconductors Hyperfast power diode 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; see Figure 1 Rth(j-a) thermal resistance from junction to ambient in free air Conditions without heatsink compound Min Typ Max Unit - - 5.5 K/W - - 7.2 K/W - 60 - K/W 001aaf257 10 Zth(j-h) (K/W) 1 10−1 δ= P tp T 10−2 t tp 10−3 10−6 T 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width 6. Isolation characteristics Table 5. Isolation limiting values and characteristics Th = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; f = 50 Hz to 60 Hz; sinusoidal waveform; relative humidity ≤ 65 %; clean and dust free - - 2500 V Cisol isolation capacitance from cathode to external heatsink; f = 1 MHz - 10 - pF BYC5X-600_2 Product data sheet All information provided in this document is subject to legal disclaimers. 29 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 of 9 BYC5X-600 WeEn Semiconductors Hyperfast power diode 7. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF IR forward voltage reverse current IF = 5 A; Tj = 150 °C; see Figure 2 - 1.40 1.75 V IF = 10 A; Tj = 150 °C; see Figure 2 - 1.75 2.20 V IF = 5 A; see Figure 2 - 2.00 2.90 V VR = 600 V - 9 100 µA VR = 500 V; Tj = 100 °C - 0.9 3.0 mA IF = 1 A to VR = 30 V; dIF/dt = 50 A/µs; see Figure 3 - 30 50 ns IF = 5 A to VR = 400 V; dIF/dt = 500 A/µs; see Figure 3 - 19 - ns IF = 5 A to VR = 400 V; dIF/dt = 500 A/µs; Tj = 100 °C; see Figure 3 - 25 30 ns IF = 5 A to VR = 400 V; dIF/dt = 50 A/µs; Tj = 125 °C; see Figure 3 - 0.7 3 A IF = 5 A to VR = 400 V; dIF/dt = 500 A/µs; Tj = 100 °C; see Figure 3 - 8 11 A IF = 10 A; dIF/dt = 100 A/µs; see Figure 4 - 9 11 V Dynamic characteristics trr IRM VFR reverse recovery time peak reverse recovery current forward recovery voltage BYC5X-600_2 Product data sheet All information provided in this document is subject to legal disclaimers. 29 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 of 9 BYC5X-600 WeEn Semiconductors Hyperfast power diode IF (A) 003aab692 7 6 5 4 3 (1) (2) (3) 2 1 0 0 1 2 VF (V) 3 (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig 2. Forward current as a function of forward voltage IF IF −dl F dt t rr time time VF 10 % Qr VFR 100 % VF IR I RM time 001aab911 001aab912 Fig 3. Reverse recovery definitions; ramp recovery BYC5X-600_2 Product data sheet Fig 4. Forward recovery definitions All information provided in this document is subject to legal disclaimers. 29 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 of 9 BYC5X-600 WeEn Semiconductors Hyperfast power diode 003aab694 15 Ptot (W) 003aab693 12 Ptot (W) 10 δ =1 a = 1.57 1.9 2.2 0.5 10 2.8 8 0.2 4.0 6 0.1 5 4 2 0 0 0 2 4 6 IF(AV) (A) 8 0 IF(AV) = IF(RMS) × √δ Product data sheet 2 3 4 5 IF(AV) (A) a = form factor = IF(RMS) / IF(AV) Fig 5. Forward power dissipation as a function of average forward current; square waveform; maximum values BYC5X-600_2 1 Fig 6. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 29 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 of 9 BYC5X-600 WeEn Semiconductors Hyperfast power diode 8. Package outline Plastic single- ended package; isolated heatsink m ounted; 1 m ounting hole; 2- lead TO- 220 ‘full pack’ SOD113 A A1 E z(2) P q m T(4) D HE L2 j(3) L1(1) k(3) Q L 1 b1 2 b w c e 0 5 10 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 b b1 c D E e 4.6 2.9 0.9 1.1 0.7 15.8 10.3 4.0 2.5 0.7 0.9 0.4 15.2 9.7 HE max 5.08 19.0 L2 L1(1) max j(3) k(3) L 2.7 0.6 14.4 3.3 1.7 0.4 13.5 2.8 0.5 m P Q 6.5 3.2 2.6 6.3 3.0 2.3 Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. 3. Dot lines area designs may vary. 4. Eject pin mark is for reference only. Outline version SOD113 BYC5X-600_2 Product data sheet T(4) w z(2) 2.6 2.55 0.4 0.8 sod113_po References IEC q JEDEC JEITA European projection Issue date 07-06-08 15-08-28 2-lead TO-220F All information provided in this document is subject to legal disclaimers. 29 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 of 9 BYC5X-600 WeEn Semiconductors Hyperfast power diode Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 9. Legal information Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall WeEn Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BYC5X-600_2 Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 29 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8/9 BYC5X-600 WeEn Semiconductors Hyperfast power diode Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BYC5X-600_2 Product data sheet All information provided in this document is subject to legal disclaimers. 29 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9/9