BYC10B-600,118

DISCRETE SEMICONDUCTORS DATA SHEET BYC10B-600 Rectifier diode ultrafast, low switching loss Product specification August 2018 WeEn Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10B-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET QUICK REFERENCE DATA VR = 600 V K VF ≤ 1.8 V A 001aaa020 IF(AV) = 10 A trr = 19 ns (typ) APPLICATIONS • Active power factor correction • Half-bridge lighting ballasts • Half-bridge/ full-bridge switched mode power supplies. The BYC10B-600 is supplied in the SOT404 surface mounting package. PINNING PIN SOT404 DESCRIPTION 1 no connection 2 cathode1 3 anode tab mb 2 3 1 cathode D2PAK (SOT404) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR IF(AV) Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current IFRM IFSM Tstg Tj CONDITIONS Tmb ≤ 114 ˚C δ = 0.5; with reapplied VRRM(max); Tmb ≤ 78 ˚C Repetitive peak forward current δ = 0.5; with reapplied VRRM(max); Tmb ≤ 78 ˚C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150˚C prior to surge with reapplied VRWM(max) Storage temperature Operating junction temperature MIN. MAX. UNIT - 600 600 500 10 V V V A - 20 A - 65 71 A A -40 - 150 150 ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS minimum footprint, FR4 board MIN. TYP. MAX. UNIT - - 2 K/W - 50 - K/W 1 it is not possible to make connection to pin 2 of the SOT404 package August 2018 1 Rev 1.500 WeEn Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10B-600 ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF Forward voltage IF = 10 A; Tj = 150˚C IF = 20 A; Tj = 150˚C IF = 10 A; VR = 600 V VR = 500 V; Tj = 100 ˚C - 1.4 1.7 2.0 9 1.1 1.8 2.3 2.9 200 3.0 V V V μA mA IR Reverse current trr trr Reverse recovery time Reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs IF = 10 A; VR = 400 V; dIF/dt = 500 A/μs IF = 10 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 100˚C - 35 19 55 - ns ns trr Reverse recovery time - 32 40 ns Irrm Peak reverse recovery current - 3 7.5 A Peak reverse recovery current IF = 10 A; VR = 400 V; dIF/dt = 100 A/μs; Tj = 125˚C IF = 10 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 125˚C Irrm - 9.5 12 A Vfr Forward recovery voltage IF = 10 A; dIF/dt = 100 A/μs - 8 11 V ID IL Vin Vin Vin = 400 V d.c. Vo = 400 V d.c. IR IF 150 uH typ OUTPUT DIODE inductive load IL 500 V MOSFET Fig.2. Typical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still flowing in the other bridge leg diode. Fig.1. Typical application, output rectifier in boost converter power factor correction circuit. Continuous conduction, mode where the transistor turns on whilst forward current is still flowing in the diode. August 2018 2 Rev 1.500 WeEn Semiconductors Product specification Rectifier diode ultrafast, low switching loss 30 BYC10-600 Forward dissipation, PF (W) Tmb(max) C 0.2 Irrm ID dIF/dt 100 0.5 20 90 D = 1.0 Vo = 1.3 V Rs = 0.05 Ohms 25 BYC10B-600 ID = IL 110 losses due to diode reverse recovery 120 time 0.1 15 10 I tp D= T tp VD 140 5 t T 0 130 0 150 15 5 10 Average forward current, IF(AV) (A) Fig.6. Origin of switching losses in transistor due to diode reverse recovery. Fig.3. Maximum forward dissipation as a function of average forward current; rectangular current waveform where IF(AV) =IF(RMS) x √D. 0.25 Diode reverse recovery switching losses, Pdsw (W) 100 Reverse recovery time, trr (ns) BYC10-600 f = 20 kHz Tj = 125 C 0.2 VR = 400 V 10 A 20 A 0.15 10 A IF = 5 A 20 A 0.1 Tj = 125 C VR = 400 V IF = 5 A 0.05 0 100 10 100 1000 Rate of change of current, dIF/dt (A/us) Transistor losses due to diode reverse recovery, Ptsw (W) 7 1000 Fig.7. Typical reverse recovery time trr, as a function of rate of change of current dIF/dt. Fig.4. Typical reverse recovery switching losses in diode, as a function of rate of change of current dIF/dt. 8 Rate of change of current, dIF/dt (A/us) 100 Peak reverse recovery current, Irrm (A) BYC10-600 20 A 6 5 4 10 A f = 20 kHz Tj = 125 C VR = 400 V 10 20 A 3 IF = 5 A IF = 5 A 2 1 Tj = 125 C VR = 400 V 1 100 Rate of change of current, dIF/dt (A/us) BYC10-600 0 100 Rate of change of current, dIF/dt (A/us) 1000 Fig.8. Typical peak reverse recovery current, Irrm as a function of rate of change of current dIF/dt. Fig.5. Typical switching losses in transistor due to reverse recovery of diode, as a function of of change of current dIF/dt. August 2018 1000 3 Rev 1.500 WeEn Semiconductors Product specification Rectifier diode ultrafast, low switching loss I dI F BYC10B-600 15 rr time Q I Tj = 25 C Tj = 150 C dt t I R 100% 10% s 5 rrm 0 Peak forward recovery voltage, Vfr (V) max typ 10 Fig.9. Definition of reverse recovery parameters trr, Irrm 20 BYC10-600 Forward current, IF (A) 20 F 0 1 2 Forward voltage, VF (V) 3 4 Fig.12. Typical and maximum forward characteristic IF = f(VF); Tj = 25˚C and 150˚C. BYC10-600 100mA BYC10-600 Reverse leakage current (A) Tj = 25 C IF = 10 A 10mA 15 Tj = 125 C typ 100 C 1mA 10 75 C 100uA 50 C 5 25 C 10uA 0 0 50 100 150 Rate of change of current, dIF/dt (A/ s) 1uA 200 Fig.10. Typical forward recovery voltage, Vfr as a function of rate of change of current dIF/dt. I 0 100 200 300 400 Reverse voltage (V) 500 600 Fig.13. Typical reverse leakage current as a function of reverse voltage. IR = f(VR); parameter Tj 10 F Transient thermal impedance, Zth j-mb (K/W) 1 time 0.1 VF PD 0.01 V D= tp T fr VF 0.001 1us time T 10us t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV79E 10s Fig.14. Maximum thermal impedance Zth j-mb as a function of pulse width. Fig.11. Definition of forward recovery voltage Vfr August 2018 tp 4 Rev 1.500 WeEn Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC10B-600 MECHANICAL DATA August 2018 5 Rev 1.500 WeEn Semiconductors Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. 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