BYR29X-800
Ultrafast power diode
19 October 2017
Product data sheet
1. General description
Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
•
•
•
•
Fast switching
Isolated plastic package
Low forward voltage drop
Soft recovery characteristic
3. Applications
•
•
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
High frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VR
reverse voltage
DC
-
-
800
V
IF(AV)
average forward
current
δ = 0.5 ; Th ≤ 73 °C; SQW; Fig. 1;
Fig. 2; Fig. 3
-
-
8
A
IFRM
repetitive peak forward δ = 0.5 ; tp = 25 µs; Th ≤ 73 °C; SQW
current
-
-
16
A
IFSM
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; SIN
-
-
60
A
tp = 8.3 ms; Tj(init) = 25 °C; SIN
-
-
66
A
IF = 8 A; Tj = 150 °C; Fig. 5
-
1.07
1.5
V
IF = 20 A; Tj = 25 °C; Fig. 5
-
1.75
1.95
V
IF = 8 A; Tj = 25 °C
-
-
1.7
V
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 6; Fig. 7
-
60
75
ns
[1]
Static characteristics
VF
forward voltage
Dynamic characteristics
trr
[1]
reverse recovery time
Neglecting switching and reverse current losses
BYR29X-800
WeEn Semiconductors
Ultrafast power diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
Simplified outline
cathode
Graphic symbol
K
mb
A
001aaa020
2
A
anode
mb
n.c.
mounting base; isolated
1
2
TO-220F (SOD113)
6. Ordering information
Table 3. Ordering information
Type number
BYR29X-800
BYR29X-800
Product data sheet
Package
Name
Description
Version
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220 "full pack"
SOD113
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BYR29X-800
WeEn Semiconductors
Ultrafast power diode
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Conditions
Min
Max
Unit
repetitive peak reverse
voltage
-
800
V
VRWM
crest working reverse
voltage
-
800
V
VR
reverse voltage
DC
-
800
V
IF(AV)
average forward current
δ = 0.5 ; Th ≤ 73 °C; SQW; Fig. 1; Fig. 2;
Fig. 3
-
8
A
IFRM
repetitive peak forward
current
δ = 0.5 ; tp = 25 µs; Th ≤ 73 °C; SQW
-
16
A
IFSM
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; SIN
-
60
A
tp = 8.3 ms; Tj(init) = 25 °C; SIN
-
66
A
[1]
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
150
°C
[1]
Neglecting switching and reverse current losses
003aaa467
20
Vo = 1.26 V
Rs = 0.03 Ω
Ptot
(W)
δ = 1.0
Th(max)
(°C)
δ = 0.5
15
003aaa468
15
40
67.5
Vo = 1.26 V
Rs = 0.03 Ω
Ptot
(W)
a = 2.2
δ = 0.2
95
a = 2.8
95
δ = 0.1
P
δ=
a = 4.0
tp
5
T
122.5
122.5
5
tp
0
67.5
Th(max)
(°C)
a = 1.9
10
10
a = 1.57
0
4
8
t
T
IF(AV) (A)
150
12
Fig. 1. Forward power dissipation and permissible
heatsink temperature as a function of average forward
current; square waveform; maximum values
BYR29X-800
Product data sheet
0
0
2
4
6
IF(AV) (A)
8
150
Fig. 2. Forward power dissipation and permissible
heatsink temperature as a function of average forward
current; sinusoidal waveform; maximum values
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BYR29X-800
WeEn Semiconductors
Ultrafast power diode
003aaa469
12
IF(RMS)
(A)
10
8
6
4
10-5
10-4
10-3
10-2
tp (s)
10-1
Fig. 3. Forward RMS current as a function of pulse width; maximum values
BYR29X-800
Product data sheet
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BYR29X-800
WeEn Semiconductors
Ultrafast power diode
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance
from junction to
heatsink
with heatsink compound; Fig. 4
-
-
5.5
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
in free air
-
55
-
K/W
003aaa474
10
Zth(j-h)
(K/W)
1
P
10-1
δ=
tp
10-2
10-6
10-5
10-4
10-3
10-2
10-1
tp
T
t
T
1
10
tp (s)
Fig. 4. Transient thermal impedance from junction to heatsink as a function of pulse width
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from
all pins to external heatsink; sinusoidal
waveform; clean and dust free
-
-
2500
V
Cisol
isolation capacitance
from cathode to external heatsink
-
10
-
pF
BYR29X-800
Product data sheet
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BYR29X-800
WeEn Semiconductors
Ultrafast power diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 8 A; Tj = 150 °C; Fig. 5
-
1.07
1.5
V
IF = 20 A; Tj = 25 °C; Fig. 5
-
1.75
1.95
V
IF = 8 A; Tj = 25 °C
-
-
1.7
V
VR = 800 V; Tj = 25 °C
-
1
10
µA
VR = 800 V; Tj = 100 °C
-
0.1
0.2
mA
Static characteristics
VF
forward voltage
IR
reverse current
Dynamic characteristics
trr
reverse recovery time
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; Fig. 6; Fig. 7
-
60
75
ns
IRM
peak reverse recovery
current
IF = 10 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 100 °C; Fig. 6; Fig. 8
-
-
6
A
Qr
recovered charge
IF = 2 A; VR = 30 V; dIF/dt = 20 A/s;
Tj = 25 °C; Fig. 9; Fig. 6
-
150
200
nC
VFR
forward recovery
voltage
IF = 10 A; dIF/dt = 10 A/µs; Tj = 25 °C;
Fig. 10
-
5
-
V
003aaa472
30
IF
dlF
dt
IF
(A)
trr
20
(1)
(2)
(3)
time
25 %
10
IR
0
100 %
Qr
IRM
003aac562
0
1
2
VF (V)
3
Fig. 6. Reverse recovery definitions; ramp recovery
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 5. Forward current as a function of forward voltage
BYR29X-800
Product data sheet
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BYR29X-800
WeEn Semiconductors
Ultrafast power diode
003aaa470
103
003aaa471
10
(2)
(2)
IRM
(A)
trr
(ns)
1
(1)
(1)
102
10-1
10
Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
1
10
dIF/dt (A/µs)
10-2
102
Fig. 7. Reverse recovery time as a function of rate of
change of forward current at indicated temperatures;
maximum values
003aaa473
103
Qr
(nC)
Tj = 100 °C
1
10
102
dIF/dt (A/µs)
Fig. 8. Peak reverse recovery current as a function
of rate of change of forward current at indicated
temperatures
IF
(2)
(1)
time
102
VF
VFRM
VF
10
1
10
dIF/dt (A/µs)
time
102
001aab912
Fig. 9. Recovered charge as a function of rate of change
of forward current
BYR29X-800
Product data sheet
Fig. 10. Forward recovery definitions
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BYR29X-800
WeEn Semiconductors
Ultrafast power diode
11. Package outline
Plastic single- ended package; isolated heatsink m ounted;
1 m ounting hole; 2- lead TO- 220 ‘full pack’
SOD113
A
A1
E
z(2)
P
q
m
T(4)
D
HE
L2
j(3)
L1(1)
k(3)
Q
L
1
b1
2
b
w
c
e
0
5
10 mm
scale
Dimensions (mm are the original dimensions)
Unit
mm
max
nom
min
A
A1
b
b1
c
D
E
e
4.6
2.9
0.9
1.1
0.7
15.8 10.3
4.0
2.5
0.7
0.9
0.4
15.2
9.7
HE
max
5.08 19.0
L2
L1(1) max
j(3)
k(3)
L
2.7
0.6
14.4
3.3
1.7
0.4
13.5
2.8
0.5
m
P
Q
6.5
3.2
2.6
6.3
3.0
2.3
Notes
1. Terminals are uncontrolled within zone L1.
2. z is depth of T.
3. Dot lines area designs may vary.
4. Eject pin mark is for reference only.
Outline
version
SOD113
T(4)
w
z(2)
2.6
2.55
0.4
0.8
sod113_po
References
IEC
q
JEDEC
JEITA
European
projection
Issue date
07-06-08
15-08-28
2-lead TO-220F
Fig. 11. Package outline TO-220F (SOD113)
BYR29X-800
Product data sheet
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BYR29X-800
WeEn Semiconductors
Ultrafast power diode
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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12. Legal information
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Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
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towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
BYR29X-800
Product data sheet
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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BYR29X-800
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Ultrafast power diode
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Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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BYR29X-800
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Ultrafast power diode
13. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 5
9. Isolation characteristics...............................................5
10. Characteristics............................................................ 6
11. Package outline.......................................................... 8
12. Legal information....................................................... 9
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 19 October 2017
BYR29X-800
Product data sheet
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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