BYT79X-600,127

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors TO -22 0 F BYT79X-600 Rectifier diode ultrafast 27 May 2015 Product data sheet 1. General description Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package 2. Features and benefits • • • • • • Fast switching Low thermal resistance Soft recovery characteristic Low forward voltage drop Low switching loss High thermal cycling performance 3. Application information • • Output rectifiers in high frequency switched-mode power supplies Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 600 V - - 15 A - - 30 A - - 143 A - - 130 A IF = 15 A; Tj = 25 °C; Fig. 4 - 1.16 1.38 V IF = 15 A; Tj = 150 °C - 1.01 1.2 V δ = 0.5 ; Th ≤ 49 °C; Square-wave; Fig. 1; Fig. 2 IFRM repetitive peak forward δ = 0.5 ; tp = 25 µs; Th ≤ 49 °C; current Square-wave IFSM non-repetitive peak forward current tp = 8.3 ms; Tj(init) = 25 °C; sinusoidal waveform tp = 10 ms; Tj(init) = 25 °C; sinusoidal waveform Static characteristics VF forward voltage Scan or click this QR code to view the latest information for this product BYT79X-600 NXP Semiconductors Rectifier diode ultrafast Symbol Parameter Conditions Min Typ Max Unit IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/µs; - 50 60 ns Dynamic characteristics trr reverse recovery time Tj = 25 °C; Fig. 5 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline cathode Graphic symbol K mb A 001aaa020 2 A anode mb n.c. mounting base; isolated 1 2 TO-220F (SOD113) 6. Ordering information Table 3. Ordering information Type number BYT79X-600 BYT79X-600 Product data sheet Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack" SOD113 All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage Square-wave; δ = 1.0 - 600 V IF(AV) average forward current δ = 0.5 ; Th ≤ 49 °C; Square-wave; - 15 A - 30 A - 143 A - 130 A Fig. 1; Fig. 2 IFRM repetitive peak forward current δ = 0.5 ; tp = 25 µs; Th ≤ 49 °C; Square-wave IFSM non-repetitive peak forward current tp = 8.3 ms; Tj(init) = 25 °C; sinusoidal waveform tp = 10 ms; Tj(init) = 25 °C; sinusoidal waveform Tstg storage temperature -55 150 °C Tj junction temperature - 150 °C 003aab477 30 Ptot (W) 003aab478 20 δ= 1 a = 1.57 Ptot (W) 1.9 16 0.5 2.2 2.8 20 12 0.2 4.0 0.1 8 10 4 0 0 6 12 18 IF(AV) (A) 0 24 IF(AV) = IF(RMS) × √δ Fig. 1. Product data sheet 5 10 IF(AV) (A) 15 a = form factor = IF(RMS) / IT(AV) Forward power dissipation as a function of average forward current; square waveform; maximum values BYT79X-600 0 Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; Fig. 3 - - 4.8 K/W without heatsink compound - - 5.9 K/W thermal resistance from junction to ambient free air in free air - 55 - K/W Rth(j-a) 001aaf045 10 Zth(j-h) (K/W) 1 10- 1 P δ= tp T 10- 2 tp 10- 3 10- 6 Fig. 3. 10- 5 10- 4 10- 3 10- 2 t T 10- 1 1 10 tp (s) Transient thermal impedance from junction to heatsink as a function of pulse width 9. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free - - 2500 V Cisol isolation capacitance from cathode to external heatsink - 10 - pF BYT79X-600 Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 15 A; Tj = 25 °C; Fig. 4 - 1.16 1.38 V IF = 15 A; Tj = 150 °C - 1.01 1.2 V VR = 600 V; Tj = 25 °C - 5 50 µA VR = 600 V; Tj = 100 °C - 0.2 0.8 mA IF = 2 A; VR ≥ 30 V; dIF/dt = 20 A/µs; - 40 70 nC - 50 60 ns - 3 5.2 A - 3.2 - V Static characteristics VF forward voltage IR reverse current Dynamic characteristics Qr recovered charge Fig. 5 trr reverse recovery time IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 5 IRM VFR peak reverse recovery current IF = 10 A; VR ≥ 30 V; dIF/dt = 50 A/µs; forward recovery voltage IF = 10 A; dIF/dt = 10 A/µs; Fig. 6 Tj = 100 °C; Fig. 5 003aab479 50 IF (A) IF dlF dt 40 trr 30 time 10 % 20 (1) (2) 100 % Qr (3) 10 IR 0 IRM 001aab911 0 0.6 1.2 VF (V) 1.8 Fig. 5. Forward recovery definitions (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 4. Forward current as a function of forward voltage BYT79X-600 Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast IF time VF VFRM VF time 001aab912 Fig. 6. Forward recovery definitions BYT79X-600 Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast 11. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 'full pack' SOD113 A A1 E z P q m T D HE L2 j L1(1) k Q L 1 b1 2 b w c M e 0 10 z(2) 20 mm scale 0.8 DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D E e HE max j k L L 1(1) L2 max m P Q q T w mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 0.7 0.4 15.8 15.2 10.3 9.7 5.08 19.0 2.7 1.7 0.6 0.4 14.4 13.5 3.3 2.8 0.5 6.5 6.3 3.2 3.0 2.6 2.3 2.6 2.55 0.4 Notes 1. Terminals are uncontrolled within zone L1. 2. z is depth of T. OUTLINE VERSION SOD113 Fig. 7. REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 07-06-18 2-lead TO-220F Package outline TO-220F (SOD113) BYT79X-600 Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BYT79X-600 Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 10 BYT79X-600 NXP Semiconductors Rectifier diode ultrafast 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Application information .........................................1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................4 9 Isolation characteristics ........................................4 10 Characteristics ....................................................... 5 11 Package outline ..................................................... 7 12 12.1 12.2 12.3 12.4 Legal information ...................................................8 Data sheet status ................................................. 8 Definitions .............................................................8 Disclaimers ...........................................................8 Trademarks .......................................................... 9 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 May 2015 BYT79X-600 Product data sheet All information provided in this document is subject to legal disclaimers. 27 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 10