BYC30WT-600PQ

BYC30WT-600P Hyperfast power diode 28 August 2018 Product data sheet 1. General description Hyperfast power diode in a SOT429 (3-lead TO247) plastic package. 2. Features and benefits • • • • Low leakage current Low thermal resistance Low reverse recovery current Reduces switching losses in associated MOSFET or IGBT 3. Applications • • • Active PFC in air conditioner Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VR reverse voltage DC - - 600 V IF(AV) average forward current δ = 0.5; Tmb ≤ 115 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 - - 30 A IFRM repetitive peak forward δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; current square-wave pulse - - 60 A IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 - - 270 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse - - 300 A IF = 30 A; Tj = 25 °C; Fig. 6 - 2 2.75 V IF = 30 A; Tj = 150 °C; Fig. 6 - 1.38 1.8 V IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 - 18 22 ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 - 35 - ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 - 70 - ns Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time BYC30WT-600P WeEn Semiconductors Hyperfast power diode Symbol Parameter Conditions Min Typ Max Unit IF = 30 A; VR = 400 V; dIF/dt = 500 A/ µs; Tj = 25 °C; Fig. 7 - 29 - ns 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A Simplified outline Graphic symbol anode K A 001aaa020 2 K cathode 3 A anode mb mb mounting base; connected to cathode 1 2 3 TO-247 (SOT429) 6. Ordering information Table 3. Ordering information Type number BYC30WT-600P BYC30WT-600P Product data sheet Package Name Description Version TO-247 plastic single-ended through-hole package; heatsink mounted; 1 SOT429 mounting hole; 3 lead TO-247 All information provided in this document is subject to legal disclaimers. 28 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 11 BYC30WT-600P WeEn Semiconductors Hyperfast power diode 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current δ = 0.5; Tmb ≤ 115 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 - 30 A IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; square-wave pulse - 60 A IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 - 270 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse - 300 A Tstg storage temperature -65 175 °C Tj junction temperature - 175 °C 003aak738 90 003aak739 60 δ=1 Ptot (W) a = 1.57 Ptot (W) 0.5 60 1.9 2.2 40 2.8 0.2 0.1 30 0 4.0 0 10 20 20 30 0 40 50 IF(AV) (A) IF(AV) = IF(RMS) × √δ Vo = 1.798 V; Rs = 0.003 Ω Product data sheet 10 20 IF(AV) (A) 30 a = form factor = IF(RMS) / IF(AV) Vo = 1.798V; Rs = 0.003 Ω Fig. 1. Forward power dissipation as a function of average forward current; square waveform; maximum values BYC30WT-600P 0 Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 28 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 11 BYC30WT-600P WeEn Semiconductors Hyperfast power diode aaa-010282 45 IF(AV) (A) IFSM (A) 115 °C 30 103 15 102 0 -50 0 50 100 Product data sheet IF 10 10-5 150 200 Tmb (°C) Fig. 3. Forward current as a function of mounting base temperature; maximum values BYC30WT-600P aaa-010283 104 IFSM t tp Tj(init) = 25 °C max 10-4 10-3 tp (s) 10-2 Fig. 4. Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. 28 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 11 BYC30WT-600P WeEn Semiconductors Hyperfast power diode 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base with heatsink compound; Fig. 5 - - 1 K/W Rth(j-a) thermal resistance from junction to ambient free air in free air - 45 - K/W aaa-010284 10 Zth(j-mb) (K/W) 1 10-1 δ = 0.5 10-2 δ = 0.3 P δ = 0.1 δ = 0.05 δ = 0.02 10-3 10-4 10-6 δ= δ = 0.01 single pulse 10-5 10-4 10-3 tp 10-2 10-1 1 tp T t T tp (s) 10 Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BYC30WT-600P Product data sheet All information provided in this document is subject to legal disclaimers. 28 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 11 BYC30WT-600P WeEn Semiconductors Hyperfast power diode 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 30 A; Tj = 25 °C; Fig. 6 - 2 2.75 V IF = 30 A; Tj = 150 °C; Fig. 6 - 1.38 1.8 V VR = 600 V; Tj = 25 °C - - 10 µA VR = 600 V; Tj = 150 °C - - 1 mA IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 - 18 22 ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 - 35 - ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 - 70 - ns IF = 30 A; VR = 400 V; dIF/dt = 500 A/ µs; Tj = 25 °C; Fig. 7 - 29 - ns IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 - 3.5 - A IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 - 7.6 - A IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 25 °C; Fig. 7 - 50 - nC IF = 30 A; VR = 200 V; dIF/dt = 200 A/ µs; Tj = 125 °C; Fig. 7 - 280 - nC Static characteristics VF IR forward voltage reverse current Dynamic characteristics trr IRM Qr reverse recovery time peak reverse recovery current recovered charge BYC30WT-600P Product data sheet All information provided in this document is subject to legal disclaimers. 28 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 11 BYC30WT-600P WeEn Semiconductors Hyperfast power diode 003aak742 40 IF IF (A) dlF dt 30 trr 20 (1) (2) time (3) 25 % IR 0 100 % Qr 10 IRM 003aac562 0 1 2 VF (V) 3 Fig. 7. Reverse recovery definitions; ramp recovery Vo = 1.798 V; Rs = 0.003 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 6. Forward current as a function of forward voltage BYC30WT-600P Product data sheet All information provided in this document is subject to legal disclaimers. 28 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 11 BYC30WT-600P WeEn Semiconductors Hyperfast power diode 10. Package outline Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429 E A ø A1 p P2 D2 q E2 D D1 E3 E1 L1 Q b1 b2 L e b c 0 20 mm scale Dimensions (mm are the original dimensions) Unit(1) A A1 b b1 b2 c D D1 D2 E E1 E2 E3 e(1) L L1 P2 p Q q ø max 5.20 2.10 1.40 2.20 3.20 0.70 20.6 17.68 1.20 15.75 14.22 5.20 1.80 20.90 4.75 3.60 3.70 2.60 6.18 7.30 nom 5.45 min 4.70 1.90 1.00 1.80 2.80 0.50 20.3 17.28 0.80 15.45 13.82 4.80 1.40 20.40 4.25 3.40 3.50 2.20 5.78 7.10 mm Note 1. Basic spacing between centers. Outline version SOT429 sot429_po References IEC JEDEC JEITA European projection Issue date 04-09-14 13-03-25 TO-247 Fig. 8. Package outline TO-247 (SOT429) BYC30WT-600P Product data sheet All information provided in this document is subject to legal disclaimers. 28 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 11 BYC30WT-600P WeEn Semiconductors Hyperfast power diode Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 11. Legal information Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 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Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BYC30WT-600P Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 28 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 11 BYC30WT-600P WeEn Semiconductors Hyperfast power diode Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BYC30WT-600P Product data sheet All information provided in this document is subject to legal disclaimers. 28 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 11 BYC30WT-600P WeEn Semiconductors Hyperfast power diode 12. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 5 9. Characteristics..............................................................6 10. Package outline.......................................................... 8 11. Legal information....................................................... 9 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 28 August 2018 BYC30WT-600P Product data sheet All information provided in this document is subject to legal disclaimers. 28 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 11 / 11