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S25GR

S25GR

  • 厂商:

    GENESICSEMICONDUCTOR

  • 封装:

    DO-203AA(DO-5)

  • 描述:

    DIODE GEN REV 400V 25A DO203AA

  • 详情介绍
  • 数据手册
  • 价格&库存
S25GR 数据手册
S25B thru S25JR Silicon Standard Recovery Diode VRRM = 100 V - 600 V IF = 25 A Features • High Surge Capability • Types from 100 V to 600 V VRRM DO-4 Package • Not ESD Sensitive A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. C A C Stud Stud (R) 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) S25B (R) S25D (R) S25G (R) S25J (R) Unit VRRM 100 200 400 600 V VRMS 70 140 280 420 V 600 V Parameter Symbol Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage VDC Conditions 100 200 400 Continuous forward current IF TC ≤ 120 °C 25 25 25 25 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 373 373 373 373 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions S25B (R) S25D (R) S25G (R) S25J (R) Unit IF = 25 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 175 °C 1.1 10 12 1.1 10 12 1.1 10 12 1.1 10 12 μA mA 2.50 2.50 2.50 2.50 °C/W V Thermal characteristics Thermal resistance, junction case Oct. 2018 RthJC http://www.diodemodule.com/silicon_products/studs/s25gr.pdf 1 S25B thru S25JR Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s25gr.pdf 2 S25B thru S25JR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO- 4 (DO-203AA) M J P D B G N C E F A A C A C Stud Stud (R) Inches Min Millimeters Max A Oct. 2018 Min Max 10-32 UNF B 0.424 0.437 10.77 11.10 C ----- 0.505 ----- 12.82 D ------ 0.800 ----- 20.30 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 G ----- 0.405 ----- 10.29 J ----- 0.216 ----- 5.50 M ----- φ0.302 ----- φ7.68 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 http://www.diodemodule.com/silicon_products/studs/s25gr.pdf 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: S25GR
S25GR
- 物料型号:GeneSiC S25B, S25D, S25G, S25JR - 器件简介:硅标准恢复二极管,具有高浪涌能力,电压范围从100V到600V,电流为25A,不敏感于静电放电(ESD)。 - 引脚分配:标准极性下,螺柱是阴极;反向极性(R)下,螺柱是阳极。螺柱是基座。 - 参数特性: - 重复峰值反向电压(VRRM):100V至600V - 有效值反向电压(VRMS):70V至420V - 直流阻断电压(VDC):100V至600V - 连续正向电流(IF):25A - 浪涌非重复正向电流(IF_SM):373A - 工作温度范围:-55°C至150°C - 存储温度范围:-55°C至150°C - 功能详解:文档提供了正向特性图、正向电压降曲线、正向浪涌电流图和反向特性图。 - 应用信息:文档提到了DO-4封装,符合RoHS标准,螺柱符合REACH标准。 - 封装信息:提供了DO-4(DO-203AA)封装的尺寸和端子配置。
S25GR 价格&库存

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