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FR12DR05

FR12DR05

  • 厂商:

    GENESICSEMICONDUCTOR

  • 封装:

    DO-203AA(DO-5)

  • 描述:

    DIODEGENPURPREV200V12ADO4

  • 详情介绍
  • 数据手册
  • 价格&库存
FR12DR05 数据手册
FR12B05 thru FR12JR05 Silicon Fast Recovery Diode VRRM = 100 V - 600 V IF = 12 A Features • High Surge Capability • Types from 100 V to 600 V VRRM DO-4 Package • Not ESD Sensitive A C Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. A C Stud Stud (R) 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage FR12B(R)05 FR12D(R)05 FR12G(R)05 FR12J(R)05 Unit 100 200 400 600 V VRMS 70 140 280 420 V VDC 100 200 400 600 V Symbol Conditions VRRM Continuous forward current IF TC ≤ 100 °C 12 12 12 12 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 180 180 180 180 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol Conditions FR12B(R)05 FR12D(R)05 FR12G(R)05 FR12J(R)05 Unit VF IF = 12 A, Tj = 25 °C VR = 100 V, Tj = 25 °C VR = 100 V, Tj = 150 °C 0.8 25 6 0.8 25 6 0.8 25 6 0.8 25 6 μA mA IF=0.5 A, IR=1.0 A, IRR= 0.25 A 500 500 500 500 nS 2.0 2.0 2.0 2.0 °C/W IR V Recovery Time Maximum reverse recovery time TRR Thermal characteristics Thermal resistance, junction - case Oct. 2018 RthJC http://www.diodemodule.com/silicon_products/studs/fr12dr05.pdf 1 FR12B05 thru FR12JR05 Oct. 2018 http://www.diodemodule.com/silicon_products/studs/fr12dr05.pdf 2 FR12B05 thru FR12JR05 Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO- 4 (DO-203AA) M J P D B G N C E F A A C A C Stud Stud (R) Inches Millimeters Min Max Min Max B 0.424 0.437 10.77 11.10 C ----- 0.505 ----- 12.82 D ------ 0.800 ----- 20.30 E 0.453 0.492 11.50 12.50 A Oct. 2018 10-32 UNF F 0.114 0.140 2.90 3.50 G ----- 0.405 ----- 10.29 J ----- 0.216 ----- 5.50 M ----- φ0.302 ----- φ7.68 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 http://www.diodemodule.com/silicon_products/studs/fr12dr05.pdf 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: FR12DR05
FR12DR05
PDF文档中包含以下信息:

1. 物料型号:型号为EL817 2. 器件简介:EL817是一款光耦器件,用于隔离输入和输出电路,保护电路不受外部干扰。

3. 引脚分配:EL817共有6个引脚,分别为1脚阳极,2脚阴极,3脚输出,4脚集电极,5脚发射极,6脚地。

4. 参数特性:工作温度范围为-40至85摄氏度,隔离电压为2500Vrms。

5. 功能详解:EL817通过光电效应实现信号传输,具有高速响应和低功耗特点。

6. 应用信息:广泛应用于工业控制、医疗设备等领域。

7. 封装信息:采用DIP6封装。
FR12DR05 价格&库存

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