S12Q

S12K thru S12QR Silicon Standard Recovery Diode VRRM = 800 V - 1200 V IF = 12 A Features • High Surge Capability • Types from 800 V to 1200 V VRRM DO-4 Package • Not ESD Sensitive A C Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. A C Stud Stud (R) 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified S12K (R) S12M (R) S12Q (R) Unit VRRM 800 1000 1200 V VRMS 560 700 840 V VDC 800 1000 1200 V Parameter Symbol Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Conditions ("R" devices have leads reversed) Continuous forward current IF TC ≤ 144 °C 12 12 12 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 280 280 280 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions S12K (R) S12M (R) S12Q (R) Unit IF = 12 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 175 °C 1.1 10 12 1.1 10 12 1.1 10 12 μA mA 2.50 2.50 2.50 °C/W V Thermal characteristics Thermal resistance, junction case Oct. 2018 RthJC http://www.diodemodule.com/silicon_products/studs/s12q.pdf 1 S12K thru S12QR Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s12q.pdf 2 S12K thru S12QR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO- 4 (DO-203AA) M J P D B G N C E F A A C A C Stud Stud (R) Inches Min Millimeters Max A Oct. 2018 Min Max 10-32 UNF B 0.424 0.437 10.77 11.10 C ----- 0.505 ----- 12.82 D ------ 0.800 ----- 20.30 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 G ----- 0.405 ----- 10.29 J ----- 0.216 ----- 5.50 M ----- φ0.302 ----- φ7.68 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 http://www.diodemodule.com/silicon_products/studs/s12q.pdf 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: S12Q