MURH10010

MURH10005 thru MURH10020R Silicon Super Fast Recovery Diode VRRM = 50 V - 200 V IF(AV) = 100 A Features • High Surge Capability • Types from 50 V to 200 V VRRM D-67 Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) MURH10005(R) MURH10010(R) MURH10020(R) Unit VRRM 50 100 200 V RMS reverse voltage VRMS 35 70 140 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 50 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 200 -55 to 150 -55 to 150 V °C °C Parameter Symbol Repetitive peak reverse voltage Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions MURH10005(R) MURH10010(R) MURH10020(R) Unit Average forward current (per pkg) IF(AV) TC = 140 °C 100 100 100 A Peak forward surge current IFSM tp = 8.3 ms, half sine 2000 2000 2000 A Maximum instantaneous forward voltage VF IFM = 100 A, Tj = 25 °C 1.0 1.0 1.0 V Maximum reverse current at rated DC blocking voltage IR Parameter Maximum reverse recovery time Trr Tj = 25 °C 25 25 25 μA Tj = 125 °C 3 3 3 mA IF=0.5 A, IR=1.0 A, IRR= 0.25 A 75 75 75 nS 0.45 0.45 0.45 °C/W Thermal characteristics Maximum thermal resistance, junction - case Oct. 2018 RΘJC http://www.diodemodule.com/silicon_products/modules/murh10010.pdf 1 MURH10005 thru MURH10020R Oct. 2018 http://www.diodemodule.com/silicon_products/modules/murh10010.pdf 2 MURH10005 thru MURH10020R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Oct. 2018 http://www.diodemodule.com/silicon_products/modules/murh10010.pdf 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: MURH10010