MURH10060

MURH10040 thru MURH10060R Silicon Super Fast Recovery Diode VRRM = 400 V - 600 V IF(AV) = 100 A Features • High Surge Capability • Types from 400 V to 600 V VRRM D-67 Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURH10040(R) MURH10060(R) Unit Repetitive peak reverse voltage VRRM 400 600 V RMS reverse voltage VRMS 280 420 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 400 -55 to 150 -55 to 150 600 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions MURH10040(R) MURH10060(R) Unit Average forward current (per pkg) IF(AV) TC = 140 °C 100 100 A Peak forward surge current IFSM tp = 8.3 ms, half sine 2000 2000 A Maximum instantaneous forward voltage VF IFM = 100 A, Tj = 25 °C 1.30 1.70 V Maximum reverse current at rated DC blocking voltage IR Tj = 25 °C 25 25 μA Tj = 125 °C 3 3 mA Maximum reverse recovery time Trr IF=0.5 A, IR=1.0 A, IRR= 0.25 A 90 110 nS 0.45 0.45 °C/W Parameter Thermal characteristics Maximum thermal resistance, junction - case Oct. 2018 RΘJC http://www.diodemodule.com/silicon_products/modules/murh10060.pdf 1 MURH10040 thru MURH10060R Oct. 2018 http://www.diodemodule.com/silicon_products/modules/murh10060.pdf 2 MURH10040 thru MURH10060R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Oct. 2018 http://www.diodemodule.com/silicon_products/modules/murh10060.pdf 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: MURH10060