1N4594

1N4594(R) thru 1N4596(R) Silicon Standard Recovery Diode VRRM = 1000 V - 1400 V IF =150 A Features • High Surge Capability • Types from 1000 V to 1400 V VRRM DO-8 Package • Not ESD Sensitive A C Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. A C Stud Stud (R) 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) 1N4594(R) 1N4595(R) 1N4596(R) Unit VRRM 1000 1200 1400 V VDC 1000 1200 1400 V A Parameter Symbol Repetitive peak reverse voltage DC blocking voltage Conditions Continuous forward current IF TC ≤ 110 °C 150 150 150 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 3000 3000 3000 A I2t for fusing Operating temperature Storage temperature I2 t Tj Tstg 60 Hz Half wave 37200 -55 to 150 -55 to 150 37200 -55 to 150 -55 to 150 37200 -55 to 150 -55 to 150 A2sec °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N4594(R) 1N4595(R) 1N4596(R) Unit Diode forward voltage VF IF = 150 A, Tj = 110 °C 1.5 1.5 1.5 V Reverse current IR VR = VRRM, Tj = 110 °C 4.5 4 3.5 mA 0.35 0.35 0.35 °C/W Thermal characteristics Thermal resistance, junction case Oct. 2018 RthJC http://www.diodemodule.com/silicon_products/studs/1n4594.pdf 1 1N4594(R) thru 1N4596(R) Oct. 2018 http://www.diodemodule.com/silicon_products/studs/1n4594.pdf 2 1N4594(R) thru 1N4596(R) Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO-8 (DO-205AA) H I F A C D B A C Stud Stud (R) G C E A Inches Min Millimeters Max A Oct. 2018 Min Max 3/8-24 UNF B ----- φ0.930 ----- φ23.5 C 1.050 1.060 26.67 26.92 D 4.300 4.700 109.22 119.38 E ----- 0.690 ----- 17.00 F 0.260 ----- 6.50 ----- G ----- 0.940 ----- 24.00 H ----- 0.600 ----- 15.23 I 0.276 0.286 7.010 7.260 http://www.diodemodule.com/silicon_products/studs/1n4594.pdf 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: 1N4594