MBRH12030

MBRH12020 thru MBRH12040R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF(AV) = 120 A Features • High Surge Capability • Types from 20 V to 40 V VRRM D-67 Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol Conditions MBRH12020(R) MBRH12030(R) MBRH12035(R) MBRH12040(R) Unit VRRM 20 30 35 40 V VRMS 14 21 25 28 V VDC Tj Tstg 20 -55 to 150 -55 to 150 30 -55 to 150 -55 to 150 35 -55 to 150 -55 to 150 40 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions Average forward current (per pkg) IF(AV) TC = 125 °C 120 120 120 120 A Peak forward surge current IFSM tp = 8.3 ms, half sine 2000 2000 2000 2000 A Maximum instantaneous forward voltage VF IFM = 120 A, Tj = 25 °C 0.70 0.70 0.70 0.70 V Maximum instantaneous reverse current at rated DC blocking voltage IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 1 10 30 1 10 30 1 10 30 1 10 30 mA 0.48 0.48 0.48 0.48 °C/W Parameter MBRH12020(R) MBRH12030(R) MBRH12035(R) MBRH12040(R) Unit Thermal characteristics Thermal resistance, junctioncase Oct. 2018 RΘJC http://www.diodemodule.com/silicon_products/modules/mbrh12030.pdf 1 MBRH12020 thru MBRH12040R Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrh12030.pdf 2 MBRH12020 thru MBRH12040R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrh12030.pdf 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: MBRH12030