MBRH120100R

MBRH12045 thru MBRH120100R Silicon Power Schottky Diode VRRM = 45 V - 100 V IF(AV) = 120 A Features • High Surge Capability • Types from 45 V to 100 V VRRM D-67 Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol Conditions MBRH12045 (R) MBRH12060 (R) MBRH12080 (R) MBRH120100 (R) Unit VRRM 45 60 80 100 V VRMS 32 42 57 70 V VDC Tj Tstg 45 -55 to 150 -55 to 150 60 -55 to 150 -55 to 150 80 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions Average forward current (per pkg) IF(AV) TC = 125 °C 120 120 120 120 A Peak forward surge current IFSM tp = 8.3 ms, half sine 2000 2000 2000 2000 A Maximum instantaneous forward voltage VF IFM = 120 A, Tj = 25 °C 0.70 0.75 0.84 0.84 V Maximum instantaneous reverse current at rated DC blocking voltage IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 1 10 30 1 10 30 1 10 30 1 10 30 mA 0.48 0.48 0.48 0.48 °C/W Parameter MBRH12045 (R) MBRH12060 (R) MBRH12080 (R) MBRH120100 (R) Unit Thermal characteristics Thermal resistance, junctioncase Oct. 2018 RΘJC http://www.diodemodule.com/silicon_products/modules/mbrh120100r.pdf 1 MBRH12045 thru MBRH120100R Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrh120100r.pdf 2 MBRH12045 thru MBRH120100R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrh120100r.pdf 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: MBRH120100R