129NQ135-1

SANGDEST MICROELECTRONICS 129NQ...R-1 SERIES Technical Data Data Sheet N1169, Rev. - Green Products 129NQ135/R-1 129NQ150/R-1 SCHOTTKY RECTIFIER Applications: ● Switching power supply ● Converters ● Free-Wheeling diodes ● Reverse battery protection Features: • • • • • • • • • • • 175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request 129NQ135-1 129NQ135R-1 Mechanical Dimensions: In Inches / mm PRM1-1(HALF PAK Module) MARKING,MOLDING RESIN st nd Marking for 129NQ135(150)/R-1, 1 row SS YYWWL, 2 row 129NQ135(150)-1/129NQ135(150)R-1 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 129NQ...R-1 SERIES Technical Data Data Sheet N1169, Rev. - Green Products Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Symbol VRRM VRWM VR IF(AV) IFSM Condition - 135 150 Max. 129NQ135(R)-1 129NQ150(R)-1 Units V 50% duty cycle @TC =110°C, rectangular wave form 120 A 8.3 ms, half Sine pulse 1140 A Max. 1.07 0.74 3 45 Units V V mA mA 3000 pF Electrical Characteristics: Characteristics Max. Forward Voltage Drop* Max. Reverse Current (per leg) * Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change Symbol VF1 VF2 IR1 IR2 CT LS dv/dt Condition @ 120A, Pulse, TJ = 25 °C @ 120A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - 6.0 nH 10,000 V/μs Condition - Specification -55 to +175 -55 to +175 Units °C °C *Pulse Width < 300µs, Duty Cycle