SANGDEST
MICROELECTRONICS
125NQ015/R-1
Technical Data
Data Sheet N1235, Rev. -
Green Products
125NQ015/R-1 SCHOTTKY RECTIFIER
Applications:
● Switching power supply ● Converters ● Free-Wheeling diodes ● Reverse battery protection
Features:
•
•
•
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125℃ TJ operation
Unique high power, Half-Pak module
Replaces three parallel DO-5’S
Easier to mount and lower profile than DO-5’S
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
125NQ015-1
125NQ015R-1
Mechanical Dimensions: In Inches / mm
PRM1-1(HALF PAK Module)
MARKING,MOLDING RESIN
st
nd
Marking for 125NQ015/R-1, 1 row SS YYWWL, 2 row 125NQ015-1/125NQ015R-1
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL:94V-0
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
125NQ015/R-1
Technical Data
Data Sheet N1235, Rev. -
Green Products
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
(per leg)
Non-Repetitive
Avalanche
Energy
Repetitive Avalanche Current
Symbol
VRWM
Condition
-
Max.
15(DC)
25(Working)
120
Units
V
2040
A
IF(AV)
50% duty cycle @TC =71°C,
rectangular wave form
A
IFSM
8.3 ms, half Sine pulse
EAS
TJ=25℃,IAS=2A,L=4.5mH
9
mJ
IAR
Current decaying linearly to
zero in 1 μsec Frequency
limited by TJ max. VA=1.5×
VR typical
2
A
Max.
0.39
0.52
0.33
0.45
40
2000
1780
1080
Units
7700
pF
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop*
Symbol
VF1
VF2
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
z
IR1
IR2
IR3
IR4
CT
LS
dv/dt
Condition
@ 120A, Pulse, TJ = 25 °C
@ 240A, Pulse, TJ = 25 °C
@ 120A, Pulse, TJ = 75 °C
@ 240A, Pulse, TJ = 75 °C
@VR = rated VR TJ = 25 °C
@VR = rated VR TJ = 100 °C
@VR = rated VR TJ = 100 °C
@VR = rated VR TJ = 100 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm
from package body
-
7.0
nH
10,000
V/μs
Condition
-
Specification
-55 to +125
-55 to +150
Units
°C
°C
V
V
mA
mA
mA
mA
Pulse Width < 300µs, Duty Cycle
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