120NQ040-1

SANGDEST MICROELECTRONICS Technical Data Data Sheet N1155, Rev. - 120NQ.../R-1 SERIES Green Products 120NQ035/R-1 120NQ040/R-1 120NQ045/R-1 SCHOTTKY RECTIFIER Applications: ● Switching power supply ● Converters ● Free-Wheeling diodes ● Reverse battery protection Features: • • • • • • • • • • • 150℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request 120NQ035-1 120NQ035R-1 Mechanical Dimensions: In mm/Inches PRM1-1(HALF PAK Module) MARKING,MOLDING RESIN st nd Marking for 120NQ035/R-1, 1 row SS YYWWL, 2 row 120NQ035-1/120NQ035R-1 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 120NQ.../R-1 SERIES Technical Data Data Sheet N1155, Rev. - Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy Repetitive Avalanche Current Symbol VRWM Condition - IF(AV) 50% duty cycle @TC =106°C, rectangular wave form IFSM 8.3 ms, half Sine pulse EAS IAR 35 40 45 Max. 120NQ035(R)-1 120NQ040(R)-1 120NQ045(R)-1 120 Units V A 1860 A TJ=25℃,IAS=12A,L=1.12mH 81 mJ Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA=1.5× VR typical 12 A Max. 0.61 0.73 0.52 0.69 10 500 0.32 1.37 Units 5200 pF Electrical Characteristics: Characteristics Max. Forward Voltage Drop* Symbol VF1 VF2 Max. Reverse Current (per leg) * Threshold Voltage Forward Slope Resistance Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change z IR1 IR2 VF(TO) rt CT LS dv/dt Condition @ 120A, Pulse, TJ = 25 °C @ 240A, Pulse, TJ = 25 °C @ 120A, Pulse, TJ = 125 °C @ 240A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C TJ = TJmax V V mA mA V mΩ @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - 7.0 nH 10,000 V/μs Condition - Specification -55 to +150 -55 to +150 Units °C °C Pulse Width < 300µs, Duty Cycle