S150J thru S150QR
Silicon Standard
Recovery Diode
VRRM = 600 V - 1200 V
IF =150 A
Features
• High Surge Capability
• Types from 600 V to 1200 V VRRM
DO-8 Package
• Not ESD Sensitive
A
C
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
A
C
Stud Stud
(R)
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
S150J (R)
S150K (R)
S150M (R)
S150Q (R)
Unit
VRRM
600
800
1000
1200
V
VRMS
420
560
700
840
V
1200
V
Parameter
Symbol
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
VDC
Conditions
600
800
1000
Continuous forward current
IF
TC ≤ 180 °C
150
150
150
150
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
3140
3140
3140
3140
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
VF
IR
Conditions
S150J (R)
S150K (R)
S150M (R)
S150Q (R)
Unit
IF = 150 A, Tj = 25 °C
VR = 600 V, Tj = 25 °C
VR = 600 V, Tj = 150 °C
1.2
10
15
1.2
10
15
1.2
10
15
1.2
10
9
μA
mA
0.35
0.35
0.35
0.35
°C/W
V
Thermal characteristics
Thermal resistance, junction case
Oct. 2018
RthJC
http://www.diodemodule.com/silicon_products/studs/s150kr.pdf
1
S150J thru S150QR
Oct. 2018
http://www.diodemodule.com/silicon_products/studs/s150kr.pdf
2
S150J thru S150QR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO-8 (DO-205AA)
H
I
F
A
C
D
B
A
C
Stud Stud
(R)
G
C
E
A
Inches
Min
Millimeters
Max
A
Oct. 2018
Min
Max
3/8-24 UNF
B
-----
φ0.930
-----
φ23.5
C
1.050
1.060
26.67
26.92
D
4.300
4.700
109.22
119.38
E
-----
0.690
-----
17.00
F
0.260
-----
6.50
-----
G
-----
0.940
-----
24.00
H
-----
0.600
-----
15.23
I
0.276
0.286
7.010
7.260
http://www.diodemodule.com/silicon_products/studs/s150kr.pdf
3
Mouser Electronics
Authorized Distributor
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S150KR
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