MBRH200100

MBRH20045 thru MBRH200100R Silicon Power Schottky Diode VRRM = 45 V - 100 V IF(AV) = 200 A Features • High Surge Capability • Types from 45 V to 100 V VRRM D-67 Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol Conditions MBRH20045(R) MBRH20060(R) MBRH20080(R) MBRH200100(R) Unit VRRM 45 60 80 100 V VRMS 32 42 57 70 V VDC Tj Tstg 45 -55 to 150 -55 to 150 60 -55 to 150 -55 to 150 80 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions IF TC ≤ 136 °C 200 200 200 200 A IFSM TC = 25 °C, tp = 8.3 ms 3000 3000 3000 3000 A Maximum instantaneous forward voltage VF IFM = 200 A, Tj = 25 °C 0.70 0.75 0.84 0.84 V Maximum instantaneous reverse current at rated DC blocking voltage IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 1 10 50 1 10 50 1 10 50 1 10 50 mA 0.35 0.35 0.35 0.35 °C/W Parameter Average forward current (per pkg) Peak forward surge current MBRH20045(R) MBRH20060(R) MBRH20080(R) MBRH200100(R) Unit Thermal characteristics Thermal resistance, junction - case Oct. 2018 RthJC http://www.diodemodule.com/silicon_products/modules/mbrh200100.pdf 1 MBRH20045 thru MBRH200100R Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrh200100.pdf 2 MBRH20045 thru MBRH200100R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrh200100.pdf 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: MBRH200100