MBRH200150R

MBRH200150 thru MBRH200200R Silicon Power Schottky Diode VRRM = 150 V - 200 V IF(AV) = 200 A Features • High Surge Capability • Types from 150 V to 200 V VRRM D-67 Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature MBRH200150(R) MBRH200200(R) Unit VRRM 150 200 V VRMS 106 141 V VDC Tj Tstg 150 -55 to 150 -55 to 150 150 -55 to 150 -55 to 150 V °C °C Symbol Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions MBRH200150(R) MBRH200200(R) Unit Average forward current (per pkg) IF(AV) TC = 125 °C 200 200 A Peak forward surge current IFSM tp = 8.3 ms, half sine 3000 3000 A Maximum instantaneous forward voltage VF IFM = 200 A, Tj = 25 °C 0.88 0.92 V Maximum instantaneous reverse current at rated DC blocking voltage IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 1 10 50 1 10 50 mA 0.35 0.35 °C/W Parameter Thermal characteristics Thermal resistance, junctioncase Oct. 2018 RΘJC http://www.diodemodule.com/silicon_products/modules/mbrh200150r.pdf 1 MBRH200150 thru MBRH200200R Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrh200150r.pdf 2 MBRH200150 thru MBRH200200R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Oct. 2018 http://www.diodemodule.com/silicon_products/modules/mbrh200150r.pdf 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: MBRH200150R