185NQ015-1

SANGDEST MICROELECTRONICS 185NQ015/R-1 Technical Data Data Sheet N1175, Rev. - Green Products 185NQ015/R-1 SCHOTTKY RECTIFIER Applications: ● Switching power supply ● Converters ● Free-Wheeling diodes ● Reverse battery protection Features: • • • • • • • • • • • 125℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request 185NQ015-1 185NQ015R-1 Mechanical Dimensions: In Inches / mm PRM1-1(HALF PAK Module) MARKING,MOLDING RESIN st nd Marking for 185NQ015/R-1, 1 row SS YYWWL, 2 row 185NQ015-1/185NQ015R-1 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 185NQ015/R-1 Technical Data Data Sheet N1175, Rev. - Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Average Forward Current Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy Repetitive Avalanche Current Symbol VRWM IF(AV) Condition 50% duty cycle @TC =66°C, rectangular wave form Max. 15 180 Units V A IFSM 8.3 ms, half Sine pulse 2700 A EAS TJ=25℃,IAS=2A,L=4.5mH 9 mJ IAR Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA=3×VR typical 2 A Max. 0.40 0.51 0.34 0.45 60 3000 2670 1620 Units Electrical Characteristics: Characteristics Forward Voltage Drop* Symbol VF1 VF2 Reverse Current (per leg) * Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change z IR1 IR2 IR3 IR4 CT LS dv/dt Condition @ 180A, Pulse, TJ = 25 °C @ 360A, Pulse, TJ = 25 °C @ 180A, Pulse, TJ = 125 °C @ 360A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 100 °C @VR = 12V, TJ = 100 °C @VR = 5V, TJ = 100 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Condition - V V mA mA 12300 pF 6.0 nH 10,000 V/μs Specification -55 to +125 -55 to +125 Units °C °C Pulse Width < 300µs, Duty Cycle