244NQ035-1

SANGDEST MICROELECTRONICS 244NQ...-1 SERIES Technical Data Data Sheet N1206, Rev. - Green Products 244NQ035-1/244NQ040-1/244NQ045-1 SCHOTTKY RECTIFIER Applications: ● Switching power supply ● Converters ● Free-Wheeling diodes ● Reverse battery protection Features: • • • • • • • • • 125℃ TJ operation Unique high power, Half-Pak module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Extremely low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm PRM1-1(HALF PAK Module) MARKING,MOLDING RESIN st nd Marking for 244NQ035-1, 1 row SS YYWWL, 2 row 244NQ035-1 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 244NQ...-1 SERIES Technical Data Data Sheet N1206, Rev. - Green Products Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current (per leg) Non-Repetitive Avalanche Energy Repetitive Avalanche Current Symbol VRWM Condition - 35 40 45 Max. 244NQ035-1 244NQ040-1 244NQ045-1 240 Units V IF(AV) 50% duty cycle @TC =75°C, rectangular wave form A IFSM 8.3 ms, half Sine pulse 4560 A EAS TJ=25℃,IAS=40A,L=0.34mH 270 mJ IAR Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA=1.5× VR typical 40 A Max. 0.55 0.73 0.52 0.72 20 2400 Units 10300 pF Electrical Characteristics: Characteristics Max. Forward Voltage Drop* Symbol VF1 VF2 Max. Reverse Current (per leg) * Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change z IR1 IR2 CT LS dv/dt Condition @ 240A, Pulse, TJ = 25 °C @ 480A, Pulse, TJ = 25 °C @ 240A, Pulse, TJ = 100 °C @ 480A, Pulse, TJ = 100 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - 5.0 nH 10,000 V/μs Condition - Specification -55 to +125 -55 to +125 Units °C °C V V mA mA Pulse Width < 300µs, Duty Cycle