S300B

S300B thru S300JR Silicon Standard Recovery Diode VRRM = 100 V - 600 V IF = 300 A Features • High Surge Capability • Types up to 600 V VRRM DO-9 Package • Not ESD Sensitive C A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. A C Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter S300B (R) S300D (R) S300E (R) S300G (R) S300J (R) Unit 100 200 300 400 600 V VRMS 70 140 212 280 420 V VDC 100 200 300 400 600 V Symbol Repetitive peak reverse voltage RMS reverse voltage Conditions VRRM DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF TC ≤ 130 °C 300 300 300 300 300 A IF,SM TC = 25 °C, tp = 8.3 ms 6850 6850 6850 6850 6850 A -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Tj Tstg Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Diode forward voltage Reverse current VF IR Conditions S300B (R) S300D (R) S300E (R) S300G (R) S300J (R) Unit IF = 300 A, Tj = 25 °C VR = 100 V, Tj = 25 °C VR = 100 V, Tj = 175 °C 1.2 10 12 1.2 10 12 1.2 10 12 1.2 10 12 1.2 10 12 μA mA 0.16 0.16 0.16 0.16 0.16 °C/W V Thermal characteristics Thermal resistance, junction - case Oct. 2018 RthJC http://www.diodemodule.com/silicon_products/studs/s300b.pdf 1 S300B thru S300JR Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s300b.pdf 2 S300B thru S300JR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO-9 (DO--205AB) 9(DO205AB) H I F A C B D A C Stud Stud (R) G C E A Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s300b.pdf 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: S300B