S320KR

S320J thru S320QR Silicon Standard Recovery Diode VRRM = 600 V - 1200 V IF = 320 A Features • High Surge Capability • Types from 600 V to 1200 V VRRM DO-9 Package • Not ESD Sensitive A Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. C A C Stud Stud (R) 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) S320J (R) S320K (R) S320M (R) S320Q (R) Unit VRRM 600 800 1000 1200 V VRMS 420 566 707 848 V 1200 V Parameter Symbol Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage VDC Conditions 600 800 1000 Continuous forward current IF TC ≤ 100 °C 320 320 320 320 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 4700 4700 4700 4700 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions S320J (R) S320K (R) S320M (R) S320Q (R) Unit IF = 300 A, Tj = 25 °C VR = 600 V, Tj = 25 °C VR = 600 V, Tj = 175 °C 1.2 10 12 1.2 10 12 1.2 10 12 1.2 10 12 μA mA 0.16 0.16 0.16 0.16 °C/W V Thermal characteristics Thermal resistance, junction case Oct. 2018 RthJC http://www.diodemodule.com/silicon_products/studs/s320kr.pdf 1 S320J thru S320QR Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s320kr.pdf 2 S320J thru S320QR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO-9 (DO--205AB) 9(DO205AB) H I F A C B D A C Stud Stud (R) G C E A Oct. 2018 http://www.diodemodule.com/silicon_products/studs/s320kr.pdf 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: S320KR