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PZU5.1BA,115

PZU5.1BA,115

  • 厂商:

    NEXPERIA(安世)

  • 封装:

    SC76

  • 描述:

    DIODE ZENER 5.1V 320MW SOD323

  • 详情介绍
  • 数据手册
  • 价格&库存
PZU5.1BA,115 数据手册
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PZUxBA series Single Zener diodes Rev. 01 — 19 September 2008 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package. 1.2 Features n Non-repetitive peak reverse power dissipation: PZSM ≤ 40 W n Total power dissipation: Ptot ≤ 320 mW n Tolerance series: B: approximately ±5 %; B1, B2, B3: approximately ±2 % n Wide working voltage range: nominal 2.4 V to 36 V (E24 range) n Low reverse current IR range n Small plastic package suitable for surface-mounted design n AEC-Q101 qualified 1.3 Applications n General regulation functions 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter forward voltage VF PZSM non-repetitive peak reverse power dissipation Ptot total power dissipation Conditions IF = 100 mA Tamb ≤ 25 °C Min Typ Max Unit [1] - - 1.1 V [2] - - 40 W [3] - - 320 mW [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PZUxBA series NXP Semiconductors Single Zener diodes 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] 1 2 1 2 006aaa152 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number PZU2.4BA to PZU36BA[1] Package Name Description Version SC-76 plastic surface-mounted package; 2 leads SOD323 PZU2.4BA/DG to PZU36BA/DG[1][2] [1] The series consists of 97 types with nominal working voltages from 2.4 V to 36 V. [2] /DG: halogen-free PZUXBA_SER_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 19 September 2008 2 of 14 PZUxBA series NXP Semiconductors Single Zener diodes 4. Marking Table 4. Marking codes Type number[1] Type number[1] Marking code B B1 B2 B3 PZU2.4*A X8 - - - PZU2.7*A X9 XA XB PZU3.0*A XT XU XV PZU3.3*A XW XX PZU3.6*A XZ PZU3.9*A PZU4.3*A B B1 B2 B3 PZU2.4*A/DG Y8 - - - - PZU2.7*A/DG Y9 YA YB - - PZU3.0*A/DG YT YU YV - XY - PZU3.3*A/DG YW YX YY - MC MD - PZU3.6*A/DG YZ NC ND - ME MF MG - PZU3.9*A/DG NE NF NG - MM MN MP MR PZU4.3*A/DG NM NN NP NR PZU4.7*A MS MT MU MV PZU4.7*A/DG NS NT NU NV PZU5.1*A MW MX MY MZ PZU5.1*A/DG NW NX NY NZ PZU5.6*A LF LG LH LK PZU5.6*A/DG RF RG RH RK PZU6.2*A LL LM LN LP PZU6.2*A/DG RL RM RN RP PZU6.8*A LR LS LT LU PZU6.8*A/DG RR RS RT RU PZU7.5*A LV LW LX LY PZU7.5*A/DG RV RW RX RY PZU8.2*A LZ CR CS CT PZU8.2*A/DG RZ ER ES ET PZU9.1*A CU CV CW CX PZU9.1*A/DG EU EV EW EX PZU10*A VA VB VC VD PZU10*A/DG WA WB WC WD PZU11*A VE VF VG VH PZU11*A/DG WE WF WG WH PZU12*A VK VL VM VN PZU12*A/DG WK WL WM WN PZU13*A VP VR VS VT PZU13*A/DG WP WR WS WT PZU14*A - - VU - PZU14*A/DG - - WU - PZU15*A VV VW VX VY PZU15*A/DG WV WW WX WY PZU16*A VZ X1 X2 X3 PZU16*A/DG WZ Y1 Y2 Y3 PZU18*A X4 X5 X6 X7 PZU18*A/DG Y4 Y5 Y6 Y7 PZU20*A XC XD XE XF PZU20*A/DG YC YD YE YF PZU22*A XG XH XK XL PZU22*A/DG YG YH YK YL PZU24*A XM XN XP XR PZU24*A/DG YM YN YP YR PZU27*A XS - - - PZU27*A/DG YS - - - PZU30*A MH - - - PZU30*A/DG NH - - - PZU33*A MK - - - PZU33*A/DG NK - - - PZU36*A ML - - - PZU36*A/DG NL - - - [1] * = B: tolerance series B, approximately ±5 % * = B1, B2, B3: tolerance series B1, B2, B3: approximately ±2 % PZUXBA_SER_1 Product data sheet Marking code © NXP B.V. 2008. All rights reserved. Rev. 01 — 19 September 2008 3 of 14 PZUxBA series NXP Semiconductors Single Zener diodes 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter IF forward current Conditions Min Max Unit mA - 200 - see Table 8 and 9 IZSM non-repetitive peak reverse current [1] PZSM non-repetitive peak reverse power dissipation [1] - 40 W Ptot total power dissipation [2] - 320 mW [3] - 490 mW Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] tp = 100 µs; square wave; Tj = 25 °C prior to surge [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air thermal resistance from junction to solder point Min Typ Max Unit [1] - - 390 K/W [2] - - 255 K/W [3] - - 55 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab. 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol VF [1] Parameter Conditions Min Typ Max Unit IF = 10 mA - - 0.9 V IF = 100 mA - - 1.1 V [1] forward voltage Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PZUXBA_SER_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 19 September 2008 4 of 14 PZUxBA series NXP Semiconductors Single Zener diodes Table 8. Characteristics per type; PZU2.4BA to PZU5.6B3A and PZU2.4BA/DG to PZU5.6B3A/DG Tj = 25 °C unless otherwise specified. PZUxBA Sel Working voltage VZ (V) Differential resistance Reverse rdif (Ω) current IR (µA) Temperature Diode coefficient capacitance SZ (mV/K) Cd (pF)[1] IZ = 5 mA IZ = 0.5 mA IZ = 5 mA IZ = 5 mA Non-repetitive peak reverse current IZSM (A)[2] Min Max Max Max Max VR (V) Typ Max Max 2.4 B 2.3 2.6 1000 100 50 1 −1.6 450 8 2.7 B 2.5 2.9 1000 100 20 1 −2.0 440 8 B1 2.5 2.75 B2 2.65 2.9 B 2.8 3.2 1000 95 10 1 −2.1 425 8 B1 2.8 3.05 B2 2.95 3.2 B 3.1 3.5 1000 95 5 1 −2.4 410 8 B1 3.1 3.35 B2 3.25 3.5 B 3.4 3.8 1000 90 5 1 −2.4 390 8 B1 3.4 3.65 B2 3.55 3.8 B 3.7 4.1 1000 90 3 1 −2.5 370 8 B1 3.7 3.97 B2 3.87 4.10 B 4.01 4.48 1000 90 3 1 −2.5 350 8 B1 4.01 4.21 B2 4.15 4.34 B3 4.28 4.48 B 4.42 4.9 800 80 2 1 −1.4 325 8 B1 4.42 4.61 B2 4.55 4.75 B3 4.69 4.9 B 4.84 5.37 250 60 2 1.5 0.3 300 5.5 B1 4.84 5.04 B2 4.98 5.2 B3 5.14 5.37 B 5.31 5.92 100 40 1 2.5 1.9 275 5.5 B1 5.31 5.55 B2 5.49 5.73 B3 5.67 5.92 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 [1] f = 1 MHz; VR = 0 V [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge PZUXBA_SER_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 19 September 2008 5 of 14 PZUxBA series NXP Semiconductors Single Zener diodes Table 9. Characteristics per type; PZU6.2BA to PZU36BA and PZU6.2BA/DG to PZU36BA/DG Tj = 25 °C unless otherwise specified. PZUxBA 6.2 6.8 7.5 8.2 9.1 10 11 12 13 Sel Working voltage VZ (V) Differential resistance Reverse rdif (Ω) current IR (nA) Temperature Diode coefficient capacitance SZ (mV/K) Cd (pF)[1] IZ = 5 mA IZ = 0.5 mA IZ = 5 mA IZ = 5 mA Non-repetitive peak reverse current IZSM (A)[2] Min Max Max Max Max VR (V) Typ Max Max B 5.86 6.53 80 30 500 3 2.7 250 5.5 B1 5.86 6.12 B2 6.06 6.33 B3 6.26 6.53 B 6.47 7.14 60 20 500 3.5 3.4 215 5.5 B1 6.47 6.73 B2 6.65 6.93 B3 6.86 7.14 B 7.06 7.84 60 10 500 4 4.0 170 3.5 B1 7.06 7.36 B2 7.28 7.60 B3 7.52 7.84 B 7.76 8.64 60 10 500 5 4.6 150 3.5 B1 7.76 8.1 B2 8.02 8.36 B3 8.28 8.64 B 8.56 9.55 60 10 500 6 5.5 120 3.5 B1 8.56 8.93 B2 8.85 9.23 B3 9.15 9.55 B 9.45 10.55 60 10 100 7 6.4 110 3.5 B1 9.45 9.87 B2 9.77 10.21 B3 10.11 10.55 B 10.44 11.56 60 10 100 8 7.4 108 3 B1 10.44 10.88 B2 10.76 11.22 B3 11.1 B 11.42 12.6 80 10 100 9 8.4 105 3 B1 11.42 11.9 B2 11.74 12.24 B3 12.08 12.6 B 12.47 13.96 80 10 100 10 9.4 103 2.5 B1 12.47 13.03 B2 12.91 13.49 B3 13.37 13.96 11.56 PZUXBA_SER_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 19 September 2008 6 of 14 PZUxBA series NXP Semiconductors Single Zener diodes Table 9. Characteristics per type; PZU6.2BA to PZU36BA and PZU6.2BA/DG to PZU36BA/DG …continued Tj = 25 °C unless otherwise specified. PZUxBA Sel Working voltage VZ (V) Differential resistance Reverse rdif (Ω) current IR (nA) Temperature Diode coefficient capacitance SZ (mV/K) Cd (pF)[1] IZ = 5 mA IZ = 0.5 mA IZ = 5 mA IZ = 5 mA Min Max Max Non-repetitive peak reverse current IZSM (A)[2] Max Max VR (V) Typ Max Max 14 B2 13.70 14.30 80 10 100 11 10.4 101 2 15 B 13.84 15.52 80 15 50 11 11.4 99 2 B1 13.84 14.46 B2 14.34 14.98 B3 14.85 15.52 B 15.37 17.09 80 20 50 12 12.4 97 1.5 B1 15.37 16.01 B2 15.85 16.51 B3 16.35 17.09 B 16.94 19.03 80 20 50 13 14.4 93 1.5 B1 16.94 17.7 B2 17.56 18.35 B3 18.21 19.03 B 18.86 21.08 100 20 50 15 16.4 88 1.5 B1 18.86 19.7 B2 19.52 20.39 B3 20.21 21.08 B 20.88 23.17 100 25 50 17 18.4 84 1.3 B1 20.88 21.77 B2 21.54 22.47 B3 22.23 23.17 B 22.93 25.57 120 30 50 19 20.4 80 1.3 B1 22.93 23.96 B2 23.72 24.78 B3 24.54 25.57 27 B 25.1 28.9 150 40 50 21 23.4 73 1 30 B 28 32 200 40 50 23 26.6 66 1 33 B 31 35 250 40 50 25 29.7 60 0.9 36 B 34 38 300 60 50 27 33.0 59 0.8 16 18 20 22 24 [1] f = 1 MHz; VR = 0 V [2] tp = 100 µs; square wave; Tj = 25 °C prior to surge PZUXBA_SER_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 19 September 2008 7 of 14 PZUxBA series NXP Semiconductors Single Zener diodes 006aab215 103 PZSM (W) mbg781 300 IF (mA) 102 200 10 100 1 10−4 10−3 0 0.6 10−2 0.8 1 tp (s) VF (V) Tj = 25 °C (prior to surge) Fig 1. Tj = 25 °C Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values Fig 2. mgl273 0 Forward current as a function of forward voltage; typical values mgl274 10 12 SZ (mV/K) 4.3 −1 SZ (mV/K) 11 5 10 9.1 8.2 7.5 6.8 3.9 3.6 −2 6.2 5.6 5.1 0 3.3 4.7 3.0 2.4 2.7 −3 Fig 3. −5 0 20 40 IZ (mA) 60 0 4 8 Tj = 25 °C to 150 °C Tj = 25 °C to 150 °C VZ = 2.4 V to 4.3 V VZ = 4.7 V to 12 V Temperature coefficient as a function of working current; typical values Fig 4. 16 IZ (mA) 20 Temperature coefficient as a function of working current; typical values PZUXBA_SER_1 Product data sheet 12 © NXP B.V. 2008. All rights reserved. Rev. 01 — 19 September 2008 8 of 14 PZUxBA series NXP Semiconductors Single Zener diodes 006aab246 102 IZ (mA) VZ(nom) (V) = 4.7 IZ (mA) VZ(nom) (V) = 2.4 3.6 3.0 2.7 3.3 10 006aab247 102 4.3 10 5.6 6.8 3.9 6.2 1 1 10−1 10−1 10−2 10−2 10−3 5.1 11 10 12 10−3 0 1 2 3 4 5 0 2 4 VZ (V) Fig 5. 9.1 8.2 7.5 Tj = 25 °C Tj = 25 °C VZ = 2.4 V to 4.3 V VZ = 4.7 V to 12 V Working current as a function of working voltage; typical values Fig 6. 8 10 12 14 VZ (V) Working current as a function of working voltage; typical values 006aab248 102 IZ (mA) 6 VZ(nom) (V) = 13 10 1 14 15 16 18 22 20 27 24 33 30 36 10−1 10−2 10−3 10 20 30 40 VZ (V) Tj = 25 °C VZ = 13 V to 36 V Fig 7. Working current as a function of working voltage; typical values PZUXBA_SER_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 19 September 2008 9 of 14 PZUxBA series NXP Semiconductors Single Zener diodes 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 1.35 1.15 1.1 0.8 0.45 0.15 1 2.7 2.3 1.8 1.6 2 0.40 0.25 0.25 0.10 Dimensions in mm Fig 8. 03-12-17 Package outline SOD323 (SC-76) 10. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PZU2.4BA to PZU36BA Package SOD323 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -115 -135 PZU2.4BA/DG to PZU36BA/DG [1] For further information and the availability of packing methods, see Section 13. PZUXBA_SER_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 19 September 2008 10 of 14 PZUxBA series NXP Semiconductors Single Zener diodes 11. Soldering 3.05 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 2.2 Dimensions in mm 0.5 (2×) 0.6 (2×) Fig 9. sod323_fr Reflow soldering footprint SOD323 (SC-76) 5 2.9 1.5 (2×) solder lands solder resist occupied area 2.75 1.2 (2×) Dimensions in mm preferred transport direction during soldering sod323_fw Fig 10. Wave soldering footprint SOD323 (SC-76) PZUXBA_SER_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 19 September 2008 11 of 14 PZUxBA series NXP Semiconductors Single Zener diodes 12. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes PZUXBA_SER_1 20080919 Product data sheet - - PZUXBA_SER_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 19 September 2008 12 of 14 PZUxBA series NXP Semiconductors Single Zener diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PZUXBA_SER_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 19 September 2008 13 of 14 PZUxBA series NXP Semiconductors Single Zener diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Quality information . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 19 September 2008 Document identifier: PZUXBA_SER_1
PZU5.1BA,115
物料型号:PZUxBA系列,包括PZU2.4BA至PZU36BA,以及PZU2.4BA/DG至PZU36BA/DG,代表了一系列工作电压从2.4V至36V的齐纳二极管。

器件简介:这些是通用的齐纳二极管,采用非常小的表面贴装设备(SMD)塑料封装SOD323(SC-76)。

引脚分配:文档中提供了引脚信息表,其中1号引脚为阴极,2号引脚为阳极。

参数特性:包括非重复峰值反向功耗(PZSM ≤40W)、总功耗(Ptot ≤320mW)、低反向电流等特性。齐纳二极管系列具有不同的容差系列,包括B(±5%)、B1、B2、B3(±2%)。

功能详解:主要用于一般调节功能。

应用信息:文档中提到了这些齐纳二极管的一般应用,例如一般调节功能。

封装信息:提供了SOD323(SC-76)封装的详细信息,包括尺寸和引脚布局。
PZU5.1BA,115 价格&库存

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PZU5.1BA,115
  •  国内价格 香港价格
  • 1+1.385761+0.16727
  • 10+0.9455110+0.11413
  • 100+0.48587100+0.05865
  • 500+0.45118500+0.05446
  • 1000+0.416491000+0.05027

库存:31688

PZU5.1BA,115
    •  国内价格
    • 10+0.33556
    • 100+0.27227
    • 300+0.24063
    • 3000+0.20612
    • 6000+0.18808
    • 9000+0.17905

    库存:618

    PZU5.1BA,115
    •  国内价格 香港价格
    • 3000+0.286333000+0.03456
    • 6000+0.264646000+0.03195
    • 9000+0.242959000+0.02933
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    库存:31688