PNM723T201E0
N-Channel MOSFET
Description
The MOSFET provide the best combination of fast switching,
D(3)
low on-resistance and cost-effectiveness.
MOSFET Product Summary
VDS(V)
RDS(on)(Ω)
ID(A)
0.2@ VGS=4.5V
20
0.25@ VGS=2.5V
G(1)
±1
0.31@ VGS=1.8V
S(2)
Absolute maximum rating@25℃
Parameter
Symbol
Value
Units
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain
Continuous
ID
±1
Curren(TJ=150℃)
Pulsed
IDP
±4
Total power dissipation
PD
140
mW
Channel temperature
TCH
150
℃
Range of storage temperature
TSTG
-55 to +150
℃
Symbol
Limits
Units
Rth(ch-a)
800
℃/W
A
Thermal resistance
Parameter
Channel to ambient
Rev.06.1
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N-Channel MOSFET
PNM723T201E0
Electrical characteristics per line@25℃( unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Drain-Source Breakdown Voltage
BVDSS
ID =1mA,VGS=0V
20
Zero Gate Voltage Drain Current
IDSS
VDS =20V,VGS=0V
-
Gate-Body Leakage Current
IGSS
VDS =0V,VGS=±8V
Gate Threshold Voltage
VGS(th)
Static Drain-Source On-Resistance
RDS(ON)
Max.
Units
-
V
-
1
μA
-
-
±10
μA
VDS =10V, ID =1mA
0.5
-
1.1
V
VGS=4.5V, ID =650mA
-
0.2
0.25
Ω
VGS=2.5V, ID =450mA
-
0.25
0.3
Ω
0.31
0.45
Ω
VGS=1.8V, ID =250mA
Forward transfer admittance
︱Yfs︱
Input Capacitance
CISS
VDS=10V, ID =300mA
VGS=0V, VDS =10V,
Typ.
395
ms
-
30
pF
-
13
pF
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
-
13
pF
Turn-On Delay Time
td(on)
-
7
ns
Turn-Off Delay Time
td(off)
-
23
ns
Turn-On Rise Time
tr
-
15
ns
Turn-On Fall Time
tf
-
15
ns
Drain-Source Diode Forward Voltage
VSD
f=1MHz
VDD≒10V, VGS =4.0V,
RG=10Ω,RL=67Ω
ID =150mA
VGS=0V,IS=100mA
-
1.2
V
Typical Characteristics
10
VDS=10V
Pulsed
Static Drain-Source On-State Resistance:
RDS(ON)(mΩ)
1.0
Drain Current:ID(A)
0.1
0.01
TA=125℃
75℃
25℃
-25℃
0.001
0.0001
0.00001
0.0
VGS=4V
Pulsed
TA=125℃
75℃
25℃
-25℃
1
0.1
0.5
1.0
0.01
1.5
0.1
1
Drain Current :ID (A)
Gate-Source Voltage :VGS (V)
Fig 1. Typical transfer Characteristics
Fig 2. Static drain-source on-state resistance vs.
drain current(Ⅰ)
Rev.06.1
2
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N-Channel MOSFET
PNM723T201E0
VGS=2.5V
Pulsed
Static Drain-Source On-State Resistance:
RDS(ON)(mΩ)
Static Drain-Source On-State Resistance:
RDS(ON)(mΩ)
10
TA=125℃
75℃
25℃
-25℃
1
0.1
0.01
0.1
Drain Current :ID (A)
10
VGS=1.8V
Pulsed
TA=125℃
75℃
25℃
-25℃
1
0.1
0.01
1
Fig 3. Static drain-source on-state resistance
drain current(Ⅲ)
100
1
TA=25℃
f=1MHz
VGS=0V
VGS=0V
Pulsed
TA=125℃
75℃
25℃
-25℃
0.1
0.01
0.0
Capacitance: C(pF)
Source current: IS(A)
1
Fig 4. Static drain-source on-state resistance vs.
Vs. drain current(Ⅱ)
0.5
1
Fig 5. Source current vs. source-drain voltage
1000
CISS
10
COSS
CRSS
1
1.5
Source-drain voltage : VSD(V)
Switching time: t(ns)
0.1
Drain Current :ID (A)
0.01
0.1
1
10
Drain-source voltage: VDS (V)
100
Fig 6. Typical capacitance vs. drain-source voltage
TA=25℃
VDD=10V
VGS=4V
RG=10Ω
Pulsed
100
td(off)
tf
td(on)
10
tr
1
0.01
0.1
Drain current: ID(A)
1
Fig 7. Switching characteristics
Rev.06.1
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N-Channel MOSFET
PNM723T201E0
Switching characteristics measurement circuit
Pulse width
ID
VGS
90%
VDS
VGS
D.U.T
RL
50%
10%
50%
RG
10%
VDS
10%
VDD
90%
90%
td(on) tr
ton
Fig.8 Switching time measurement circuit
td(off)
tf
toff
Fig.9 Switching time waveforms
Product dimension (SOT-723)
(0.11)
Side View
0.437±0.013
R0.1-R0.15
9°(4x)
1.2±0.03
0.4
(2)
(1)
(3)
Unit:mm
0.2
Bottom View
1.2±0.025
0.8±0.025
Rev.06.1
4
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N-Channel MOSFET
PNM723T201E0
0.6
0.6
0.6
0.65
0.4
0.8
1
Unit:mm
Device
Package
Shipping
PNM723T201E0
SOT-723 (Pb-Free)
10000 / Tape & Reel
Ordering information
Rev.06.1
5
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N-Channel MOSFET
PNM723T201E0
IMPORTANT NOTICE
and
are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi
reserves the right to make changes without further notice to any products herein. Prisemi makes
no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Prisemi
assume any liability arising out of the application or use of any
product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. “Typical” parameters which may be provided in
Prisemi data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. Prisemi does not
convey any license under its patent rights nor the rights of others. The products listed in this
document are designed to be used with ordinary electronic equipment or devices, Should you
intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical
instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), please be sure to consult with our sales representative in advance.
Website: http://www.prisemi.com
For additional information, please contact your local Sales Representative.
©Copyright 2009, Prisemi Electronics
is a registered trademark of Prisemi Electronics.
All rights are reserved.
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