NSI1300D25-DSWVR

NSi1300 High Reliability Reinforced Isolated Amplifier Datasheet (EN) 1.4 Product Overview NSI1300 is a high-performance isolated amplifier with output separated from input based on the NOVOSENSE capacitive isolation technology. The device has a linear differential input signal range of ±50mV (±64mV full-scale) or ±250mV (±320mV full-scale). The differential input is ideally suited to shunt resistor-based current sensing in high voltage applications where isolation is required. The device has a fixed gain (8.2 or 41) and provides a differential analog output. The low offset and gain drift ensure the accuracy over the entire temperature range. High common-mode transient immunity ensures that the device is able to provide accurate and reliable measurements even in the presence of high-power switching such as in motor control applications. The fail-safe functions including input common-mode overvoltage detection and missing VDD1 detection simplify system-level design and diagnostics. Key Features  Up to 5000Vrms Insulation voltage  ±50mV or ±250mV linear Input Voltage Range  Fixed Gain: 8.2 or 41  Low Offset Error and Drift: NSI1300D25: ±0.2mV (Max), -2~4μV/℃ (Max)  VDD1 monitoring  Input common-mode overvoltage detection  Operation Temperature: -40℃ ~125℃  RoHS-Compliant Packages: SOP8(300mil) Safety Regulatory Approvals  UL recognition: up to 5000Vrms for 1 minute per UL1577  CQC certification per GB4943.1-2011   CSA component notice 5A approval IEC60950-1 standard DIN VDE V 0884-11:2017-01 Applications  Shunt current monitoring  AC motor controls  Uninterruptible Power Suppliers  Automotive onboard chargers Device Information Part Number NSI1300D25-DSWVR Package SOP8(300mil) Body Size 5.85mm × 7.50mm NSI1300D05-DSWVR SOP8(300mil) 5.85mm × 7.50mm Functional Block Diagrams NSI1300D05: ±0.1mV (Max), -0.8~1μV/℃ (Max)  Low Gain Error and Drift: ±0.3% (Max), ±50ppm/℃ (Max)  Low Nonlinearity and Drift: ±0.03% (Max), ±1ppm/℃ (Typ)  SNR: 86dB (Typ, BW=10kHz), 72dB (Typ, BW=100kHz)  Wide bandwidth: 310kHz (Typ)  High CMTI: 150kV/μs (Typ)  System-Level Diagnostic Features: Copyright © 2020, NOVOSENSE Figure 1. NSi1300 Block Diagram Page 1 NSi1300 INDEX 1. PIN CONFIGURATION AND FUNCTIONS.......................................................................................................................................3 2. ABSOLUTE MAXIMUM RATINGS.................................................................................................................................................. 4 3. RECOMMENDED OPERATING CONDITIONS.................................................................................................................................4 4. THERMAL INFORMATION............................................................................................................................................................. 4 5. SPECIFICATIONS............................................................................................................................................................................ 5 5.1. ELECTRICAL CHARACTERISTICS: NSI1300D05................................................................................................................................ 5 5.2. ELECTRICAL CHARACTERISTICS: NSI1300D25................................................................................................................................ 6 5.3. TYPICAL PERFORMANCE CHARACTERISTICS..................................................................................................................................... 8 5.4. PARAMETER MEASUREMENT INFORMATION................................................................................................................................. 12 6. HIGH VOLTAGE FEATURE DESCRIPTION..................................................................................................................................... 12 6.1. INSULATION AND SAFETY RELATED SPECIFICATIONS........................................................................................................................ 12 6.2. INSULATION CHARACTERISTICS.................................................................................................................................................... 12 6.3. REGULATORY INFORMATION....................................................................................................................................................... 13 7. FUNCTION DESCRIPTION............................................................................................................................................................14 7.1. OVERVIEW...............................................................................................................................................................................14 7.2. ANALOG INPUT........................................................................................................................................................................ 14 7.3. ANALOG OUTPUT..................................................................................................................................................................... 14 8. APPLICATION NOTE.....................................................................................................................................................................16 8.1. TYPICAL APPLICATION CIRCUIT....................................................................................................................................................16 8.2. SHUNT RESISTOR SELECTION...................................................................................................................................................... 16 8.3. PCB LAYOUT............................................................................................................................................................................16 9. PACKAGE INFORMATION............................................................................................................................................................17 10. ORDERING INFORMATION....................................................................................................................................................... 18 11. DOCUMENTATION SUPPORT....................................................................................................................................................18 12. TAPE AND REEL INFORMATION................................................................................................................................................18 13. REVISION HISTORY....................................................................................................................................................................20 NOVOSENSE CONFIDENITIAL PAGE 4 NSi1300 Datasheet (EN) 1.4 1. Pin Configuration and Functions Figure 1.1 NSi1300 Package Table 1.1 NSi1300 Pin Configuration and Description NSi1300 PIN NO. SYMBOL FUNCTION 1 VDD1 Power supply for isolator side 1(3.0V to 5.5V) 2 INP 3 INN Negative analog input 4 GND1 Ground 1, the ground reference for Isolator Side 1 5 GND2 Ground 2, the ground reference for Isolator Side 2 6 OUTN Negative output 7 OUTP Positive output 8 VDD2 Power supply for isolator side 2 (3.0V to 5.5V) Copyright © 2020, NOVOSENSE Positive analog input (±250mV recommended for NSI1300D25 and ±50mV recommended for NSI1300D05) Page 3 NSi1300 Datasheet (EN) 1.4 2. Absolute Maximum Ratings Parameters Symbol Min VDD1, VDD2 -0.3 6.5 V INP, INN GND1-6 VDD1+0.5 V OUTP, OUTN GND2-0.5 VDD2+0.5 V Io -10 10 mA TOPR -40 125 ℃ Junction Temperature TJ -40 150 ℃ Storage Temperature TSTG -55 150 ℃ HBM (1) ±2000 V CDM (2) ±1000 V Power Supply Voltage Input Voltage Output Voltage Output current per Output Pin Operating Temperature Electrostatic discharge Typ Max Unit (1) Human body model (HBM), per AEC-Q100-002-RevD (2) Charged device model (CDM), per AEC-Q100-011-RevB 3. Recommended Operating Conditions Parameters Symbol Min Typ Max Side1 Power Supply VDD1 3.0 5.0 5.5 V Side2 Power Supply VDD2 3.0 3.3 5.5 V NSI1300D05 NSI1300D25 Unit Differential input voltage before clipping output VClipping Linear differential input full scale voltage VFSR -50 50 mV Operating common-mode input voltage VCM -0.032 0.8 V Differential input voltage before clipping output VClipping Linear differential input full scale voltage VFSR -250 250 mV Operating common-mode input voltage VCM -0.16 0.8 V TA -40 125 ℃ Operating Ambient Temperature ±64 mV ±320 mV 4. Thermal Information Parameters Symbol SOP8(300mil) Unit Junction–to-ambient thermal resistance RθJA 86 ℃/W Junction-to-case (top) thermal resistance RθJC(top) 28 ℃/W Copyright © 2020, NOVOSENSE Page 4 NSi1300 Datasheet (EN) 1.4 Parameters Symbol SOP8(300mil) Unit Junction-to-board thermal resistance RθJB 42 ℃/W Junction–to-top characterization parameter ΨJT 4 ℃/W Junction-to-board characterization parameter ΨJB 42 ℃/W 5. Specifications 5.1. Electrical Characteristics: NSI1300D05 (VDD1 = 3.0V ~ 5.5V, VDD2 = 3.0V ~ 5.5V, INP = -50mV to +50mV, and INN = GND1 = 0V, TA = -40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 3.3V, TA = 25℃) Parameters Symbol Min Typ Max Unit Comments Side1 Supply Voltage VDD1 3.0 5.0 5.5 V Side2 Supply Voltage VDD2 3.0 3.3 5.5 V Side1 Supply Current IDD1 11.4 15.1 mA Side2 Supply Current IDD2 6.3 8.4 mA 2.3 2.7 V VDD1 falling V Detection level has a typical hysteresis of 96 mV Power Supply VDD1 undervoltage detection threshold voltage VDD1UV 1.8 VCMov 0.9 VOS -0.1 ±0.01 0.1 TCVOS -0.8 ±0.15 1 Analog Input Common-mode overvoltage detection level Input offset voltage Input offset drift mV INP = INN = GND1 μV/℃ CMRRdc -120 dB INP = INN, fIN = 0 Hz, VCM min ≤ VIN ≤ VCM max CMRRac -112 dB INP = INN, fIN = 10 kHz, VCM min ≤ VIN ≤ VCM max Single-ended input resistance RIN 4.75 kΩ INN = GND1 Differential input resistance RIND 4.9 kΩ Input capacitance CI 2 pF Input bias current IIB Common-mode rejection ratio Input bias current drift -29 TCIIB -22 -14 µA ±1.5 nA/℃ 41 V/V INP = INN = GND1, IIB = (IIBP + IIBN) / 2 Analog Output Nominal Gain Gain error Gain error thermal drift Copyright © 2020, NOVOSENSE EG -0.3% ±0.05% 0.3% TCEG -50 ±15 50 ppm/℃ Page 5 NSi1300 Parameters Datasheet (EN) 1.4 Symbol Nonlinearity Min Typ -0.03% ±0.01% Nonlinearity drift Total harmonic distortion THD Output noise 80 Signal to noise ratio Unit VCMout Failsafe differential output voltage VFAILSAFE ±1 ppm/℃ -85 dB VIN =100mVpp, fIN = 10kHz, BW = 100kHz 260 µVRMS INP = INN = GND1, BW = 100kHz 84 dB VIN = 100mVpp, fIN = 1kHz, BW = 10kHz 72 dB VIN = 100mVpp, fIN = 10kHz, BW = 100kHz 250 1.44 1.49 V -2.6 -2.5 V VCM>VCMov, or VDD1 missing 310 kHz PSRRdc -118 dB PSRR vs VDD1, at DC PSRRac -116 dB PSRR vs VDD1, 100mV and 10kHz ripple PSRRdc -108 dB PSRR vs VDD2, at DC PSRRac -97 dB PSRR vs VDD2, 100mV and 10kHz ripple Output resistance ROUT < 0.2 Ω Output short-circuit current IOUT.OC ±13 mA Common-mode transient immunity CMTI 150 kV/μs Power supply rejection ratio (1) BW 1.39 Comments 0.03% SNR Common-mode output voltage Output bandwidth Max 100 Common-mode transient immunity Timing Rising time of OUTP, OUTN tr 1.3 μs Falling time of OUTP, OUTN tf 1.3 μs INP, INN to OUTP, OUTN signal delay (50% - 50%) tPD 1.6 Analog setting time tAS 0.5 2.1 μs ms VDD1 step to 3.0 V with VDD2 ≥ 3.0 V, to OUTP, OUTN valid, 0.1% settling (1) Input referred. 5.2. Electrical Characteristics: NSI1300D25 (VDD1 = 3.0V ~ 5.5V, VDD2 = 3.0V ~ 5.5V, INP = -250mV to +250mV, and INN = GND1 = 0V, TA = -40℃ to 125℃. Unless otherwise noted, Typical values are at VDD1 = 5V, VDD2 = 3.3V, TA = 25℃) Parameters Symbol Min Typ Max Unit Comments Power Supply Copyright © 2020, NOVOSENSE Page 6 NSi1300 Parameters Datasheet (EN) 1.4 Symbol Min Typ Max Side1 Supply Voltage VDD1 3.0 5.0 5.5 V Side2 Supply Voltage VDD2 3.0 3.3 5.5 V Side1 Supply Current IDD1 11.4 15.1 mA Side2 Supply Current IDD2 6.3 8.4 mA 2.3 2.7 V VDD1 falling V Detection level has a typical hysteresis of 96 mV VDD1 undervoltage detection threshold voltage Unit VDD1UV 1.8 VCMov 0.9 VOS -0.2 ±0.01 0.2 mV TCVOS -2 1 4 μV/℃ Comments Analog Input Common-mode overvoltage detection level Input offset voltage Input offset drift INP = INN = GND1 CMRRdc -106 dB INP = INN, fIN = 0 Hz, VCM min ≤ VIN ≤ VCM max CMRRac -106 dB INP = INN, fIN = 10 kHz, VCM min ≤ VIN ≤ VCM max Single-ended input resistance RIN 19 kΩ INN = GND1 Differential input resistance RIND 22 kΩ Input capacitance CI 2 pF Input bias current IIB Common-mode rejection ratio Input bias current drift -24 TCIIB -18 -12 µA ±1 nA/℃ 8.2 V/V INP = INN = GND1, IIB = (IIBP + IIBN) / 2 Analog Output Nominal Gain Gain error Gain error thermal drift EG -0.3% ±0.05% 0.3% TCEG -50 ±15 50 -0.03% ±0.01% 0.03% Nonlinearity Nonlinearity drift Total harmonic distortion THD Output noise 80 Signal to noise ratio Common-mode output voltage Copyright © 2020, NOVOSENSE ppm/℃ ±1 ppm/℃ -85 dB VIN =500mVpp, fIN = 10kHz, BW = 100kHz 195 µVRMS INP = INN = GND1, BW = 100kHz 86 dB VIN = 500mVpp, fIN = 1kHz, BW = 10kHz 72 dB VIN = 500mVpp, fIN = 10kHz, BW = 100kHz SNR VCMout 1.39 1.44 1.49 V Page 7 NSi1300 Parameters Failsafe differential output voltage Output bandwidth Datasheet (EN) 1.4 Symbol Min VFAILSAFE -2.6 250 Max -2.5 Unit V Comments VCM>VCMov, or VDD1 missing 310 kHz PSRRdc -104 dB PSRR vs VDD1, at DC PSRRac -102 dB PSRR vs VDD1, 100mV and 10kHz ripple PSRRdc -90 dB PSRR vs VDD2, at DC PSRRac -85 dB PSRR vs VDD2, 100mV and 10kHz ripple Output resistance ROUT < 0.2 Ω Common-mode transient immunity CMTI 150 kV/μs Power supply rejection ratio (1) BW Typ 100 Common-mode transient immunity Timing Rising time of OUTP, OUTN tr 1.3 μs Falling time of OUTP, OUTN tf 1.3 μs INP, INN to OUTP, OUTN signal delay (50% - 50%) tPD 1.6 Analog setting time tAS 0.5 2.1 μs ms VDD1 step to 3.0 V with VDD2 ≥ 3.0 V, to OUTP, OUTN valid, 0.1% settling (1) Input referred. 5.3. Typical Performance Characteristics Unless otherwise noted, test at VDD1 = 5V, VDD2 = 3.3V, Vin = -250mV to 250mV (NSI1300D25) or -50mV to 50mV (NSI1300D05). Figure 5.1 Common-Mode Overvoltage Detection Level vs Temperature Copyright © 2020, NOVOSENSE Figure 5.2 Input Offset Voltage vs Temperature (NSI1300D25) Page 8 NSi1300 Datasheet (EN) 1.4 Figure 5.3 Input Offset Voltage vs Temperature (NSI1300D05) Figure 5.7 Gain Error vs Temperature (NSI1300D05) Figure 5.4 Common-Mode Rejection Ratio vs Temperature Figure 5.8 Nonlinearity vs Temperature Figure 5.5 Input Bias Current vs Temperature Figure 5.9 THD vs Supply Voltage (NSI1300D05) Figure 5.6 Gain Error vs Temperature (NSI1300D25) Figure 5.10 THD vs Supply Voltage (NSI1300D25) Copyright © 2020, NOVOSENSE Page 9 NSi1300 Figure 5.11 THD vs Temperature (NSI1300D25) Figure 5.12 THD vs Temperature (NSI1300D05) Figure 5.13 Nonlinearity vs Input Voltage (NSI1300D25) Figure 5.14 Nonlinearity vs Input Voltage (NSI1300D05) Copyright © 2020, NOVOSENSE Datasheet (EN) 1.4 Figure 5.15 SNR vs Supply Voltage (NSI1300D05) Figure 5.16 SNR vs Supply Voltage (NSI1300D25) Figure 5.17 SNR vs Temperature Figure 5.18 Output Common-Mode Voltage vs Side2 Supply Voltage Page 10 NSi1300 Figure 5.19 Output Common-Mode Voltage vs Temperature Datasheet (EN) 1.4 Figure 5.23 Power-Supply Rejection Ratio vs Ripple Frequency Figure 5.20 Fail-Safe Output Voltage vs Temperature Figure 5.24 Supply Current vs Temperature (NSI1300D25) Figure 5.21 Vin to Vout Delay vs Temperature Figure 5.25 Supply Current vs Temperature (NSI1300D05) Figure 5.22 Supply Current vs Supply Voltage Figure 5.26 Output Voltage vs Input Voltage (NSi1300D25) Copyright © 2020, NOVOSENSE Page 11 NSi1300 Datasheet (EN) 1.0 5.4. Parameter Measurement Information Figure 5.1 Common-Mode Transient Immunity Test Circuit 6. High Voltage Feature Description 6.1. Insulation and Safety Related Specifications Parameters Symbol Value Unit Comments Minimum External Air Gap (Clearance) CLR 8 mm Shortest terminal-to-terminal distance through air Minimum External Tracking (Creepage) CPG 8 mm Shortest terminal-to-terminal distance across the package surface Minimum internal gap DTI 32 μm Distance through insulation Tracking Resistance (Comparative Tracking Index) CTI >600 V Material Group I DIN EN 60112 (VDE 0303-11); IEC 60112 IEC 60664-1 6.2. Insulation Characteristics Description Test Condition Symbol Value Unit DIN VDE 0110 For Rated Mains Voltage ≤ 150Vrms I to IV For Rated Mains Voltage ≤ 400Vrms I to IV For Rated Mains Voltage ≤ 300Vrms I to IV Climatic Classification 40/125/21 Pollution Degree per DIN VDE 0110, 2 Table 1 Maximum repetitive isolation voltage Maximum working isolation voltage Copyright © 2020, NOVOSENSE VIORM AC Voltage DC Voltage VIOWM 2121 VPEAK 1500 VRMS 2121 VDC Page 12 NSi1300 Datasheet (EN) 1.4 Description Test Condition Input to Output Test Voltage, Method B1 VIORM × 1.875 = Vpd (m), 100% production test, tini = tm = 1 sec, partial discharge < 5 pC Symbol Value Unit V pd (m) 3977 VPEAK Input to Output Test Voltage, Method A After Environmental Tests Subgroup 1 VIORM × 1.6 = Vpd (m), tini = 60 sec, tm = 10 sec, partial discharge < 5 pC V pd (m) 3394 VPEAK After Input and /or Safety Test Subgroup 2 and Subgroup 3 VIORM × 1.2= Vpd (m), tini = 60 sec, tm = 10 sec, partial discharge < 5 pC V pd (m) 2545 VPEAK t = 60 sec VIOTM 8000 VPEAK Test method per IEC60065,1.2/50us waveform, VTEST=VIOSM × 1.6 VIOSM 6250 VPEAK VIO =500V, Tamb=Ts RIO >109 Ω VIO =500V, 100℃ ≤ Tamb ≤ 125℃ RIO >1011 Ω f = 1MHz CIO 0.8 pF θJA = 86 ℃/W, VI = 5.5V, TJ = 150 ℃, TA = 25 ℃ Ps 1430 mW θJA = 86 ℃/W, VI = 5.5V, TJ = 150 ℃, TA = 25 ℃ Is 260 mA Ts 150 ℃ VISO 5000 VRMS Maximum transient isolation voltage Maximum Surge Isolation Voltage Isolation resistance Isolation capacitance Total Power Dissipation at 25℃ Safety input, output, or supply current Maximum safety temperature UL1577 VTEST = VISO, t = 60 s (qualification), Insulation voltage per UL VTEST = 1.2 × VISO, t = 1 s (100% production test) Figure 6.1 NSi1300 Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN VDE V 0884-11 6.3. Regulatory Information The NSi1300 are approved or pending approval by the organizations listed in table. UL Copyright © 2020, NOVOSENSE VDE CQC Page 13 NSi1300 Datasheet (EN) 1.4 UL VDE CQC Certified by CQC11-4715432012 UL 1577 Component Recognition Program Approved under CSA Component Acceptance Notice 5A DIN VDE V 0884-11(VDE V 0884-11):2017-01 Single Protection, 5000Vrms Isolation voltage Single Protection, 5000Vrms Isolation voltage Reinforce Insulation 2121Vpeak, VIOSM=6250Vpeak Reinforced insulation Certificate No.E500602 Certificate No.E500602 Certificate No.40052820 CQC20001264938 GB4943.1-2011 7. Function Description 7.1. Overview The NSI1300 is a high performance isolated amplifier that accept fully-differential input. The fully-differential input is ideally suited to shunt current monitoring in high voltage applications where isolation is required. The analog input is continuously sampled by a second-order Σ-Δ modulator in the device, which is driven by a pre-stage fully-differential amplifier in the device. With the internal voltage reference and clock generator, the modulator convert the analog input signal to a digital bitstream. The output of the modulator is transferred by the drivers (called TX in the Functional Block Diagram) across the isolation barrier that separates the isolated side1 and side2 voltage. The received bitstream and clock are synchronized and processed, as shown in the Functional Block Diagram, by a fourth-order analog filter on the side2 and has a differential output. Figure 7.1 Function Block Diagram 7.2. Analog Input There are two restrictions on the analog input signals (VINP and VINN).  If the input voltage exceeds the range GND1 – 6 V to VDD1 + 0.5 V, the input current must be limited to 10 mA because the device input electrostatic discharge (ESD) diodes turn on.  The linearity and noise performance of the device are ensured only when the analog input voltage remains within the specified linear full-scale range (FSR) and within the specified common-mode input voltage range. 7.3. Analog Output For linear input range, the analog output of NSI1300 has a fixed gain (8.2 for NSI1300D25 and 41 for NSI1300D05). If a full-scale input signal is applied to the NSI1300 (VIN ≥ VClipping), the analog output will be clipped (typically, 2.45V for positive clipping and 2.45V for negative clipping). In addition, NSI1300 integrates some diagnostic measures and offers a fail-safe output to simplify system-level design. The fail-safe output is a negative differential output voltage that does not occur under normal device operation, and it will only be activated in following conditions:  When the undervoltage of VDD1 is detected (VDD1< VDD1UV).  When the overvoltage of common-mode input voltage is detected (VCM>VCMov). Copyright © 2020, NOVOSENSE Page 14 NSi1300 Datasheet (EN) 1.4 Vout (differential) VNeg_Clip = -2.45V(Typical) Figure 7.2 Typical negative clipping output VDD1 Vout (differential) VFailsafe = -2.6V(Typical) Figure 7.3 Typical Failsafe output when VDD1 undervoltage VCM Vout (differential) VFailsafe = -2.6V(Typical) Figure 7.4 Typical Failsafe output when input common mode signal overvoltage Copyright © 2020, NOVOSENSE Page 15 NSi1300 Datasheet (EN) 1.4 8. Application Note 8.1. Typical Application Circuit NSI1300 is ideally suited to shunt resistor-based current sensing in high voltage applications such as frequency inverters. The typical application circuit is shown in Figure 8.1. The voltage across the shunt resistor Rsense is applied to the differential input of NSI1300 through a RC filter. The differential output of the isolated amplifier is converted to a single-ended analog output with an operational-amplifier-based circuit. Suggest to add >1kΩ resistor on the OUTP and OUTN pin to prevent output over-current. An analog-to-digital converter usually receives the analog output and converts to digital signal for controller processing. Figure 8.1 Typical application circuit in phase current sensing 8.2. Shunt Resistor Selection Choosing a particular shunt resistor is usually a compromise between minimizing power dissipation and maximizing accuracy. Smaller sense resistor decreases power dissipation, while larger sense resistor can improve measure accuracy by utilizing the full input range of isolated amplifier. There are two other factors should be considered when selecting the shunt resistor:  The voltage-drop caused by the rated current range must not exceed the recommended linear input voltage range: VSHUNT ≤ FSR.  The voltage-drop caused by the maximum allowed overcurrent must not exceed the input voltage that causes a clipping output: VSHUNT ≤ VClipping. 8.3. PCB Layout There are some key guidelines or considerations for optimizing performance in PCB layout:  NSI1300 requires a 0.1µF bypass capacitor between VDD1 and GND1, VDD2 and GND2. The capacitor should be placed as close as possible to the VDD pin. If better filtering is required, an additional 1~10µF capacitor may be used.  Kelvin rules is recommended for the connection between shunt resistor to NSI1300. Because of the Kelvin connection, any voltage drops across the trace and leads should have no impact on the measured voltage.  Place the shunt resistor close to the INP and INN inputs and keep the layout of both connections symmetrical and run very close to each other to the input of the NSI1300. This minimizes the loop area of the connection and reduces the possibility of stray magnetic fields from interfering with the measured signal. Copyright © 2020, NOVOSENSE Page 16 NSi1300 Datasheet (EN) 1.4 9. Package Information Figure 9.1 SOW8 Package Shape and Dimension in millimeters Copyright © 2020, NOVOSENSE Page 17 NSi1300 Datasheet (EN) 1.4 Figure 9.2 SOW8 Package Board Layout Example 10. Ordering Information Part No. NSI1300D05 DSWVR NSI1300D25 DSWVR Isolation Rating(kV) Linear Input Range(mV) Moisture Sensitivity Level Temperature Automotive 5 -50 ~ 50 Level-3 -40 to 125℃ NO 5 -250 ~ 250 Level-3 -40 to 125℃ NO Package Type SOP8 (300mil) SOP8 (300mil) Package Drawing SPQ SOW8 1000 SOW8 1000 11. Documentation Support Part Number Product Folder Datasheet Technical Documents Isolator selection guide NSi1300 Click here Click here Click here Click here 12. Tape and Reel Information Copyright © 2020, NOVOSENSE Page 18 NSi1300 Datasheet (EN) 1.4 Figure 12.1 Tape and Reel Information of SOP8(300mil) Copyright © 2020, NOVOSENSE Page 19 NSi1300 Datasheet (EN) 1.4 13. Revision History Revision 1.0 1.1 1.2 1.3 1.4 Description Initial Release  Add Nonlinearity vs Input Voltage, Power-Supply Rejection Ratio vs Ripple Frequency and Output Voltage vs Input Voltage Performance Characteristics in 5.3  Update Certificate number of Regulatory Information in 6.3 Add VISO specification in 6.2 Insulation Characteristics and AEC-Q100 Date 2020/8/29 2021/1/16  Remove NSI1300x-Q1 order information and add in NSI1300x-Q1 datasheet  Add SOW8 package layout example Update insulation characteristics 2021/7/12 qualification Copyright © 2020, NOVOSENSE 2021/4/12 2021/7/17 Page 20