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PTVSHC2EN7VU

PTVSHC2EN7VU

  • 厂商:

    PRISEMI(上海芯导电子)

  • 封装:

    DFN1610-2L

  • 描述:

    ESD抑制器/TVS二极管 VRWM=7V VBR(Typ)=8V VC=24V IPP=70A Ppp=1.4KW (DFN1610-2L

  • 详情介绍
  • 数据手册
  • 价格&库存
PTVSHC2EN7VU 数据手册
PTVSHC2EN7VU Transient Voltage Suppressor Description The PTVSHC2EN7VU ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable 1 2 electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. PTVSHC2EN7VU protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The PTVSHC2EN7VU is available in a DFN1610-2L package with working voltages of 7 volt. It is used to meet the ESD immunity requirements of IEC 61000-4-2, (±30kV air, ±30kV contact discharge) Feature Applications  1400W Peak pulse power per line (tP = 8/20μs)  Cell phone handsets and accessories  DFN1610-2L package  Personal digital assistants (PDA’s)  Response time is typically < 1 ns  Notebooks, desktops, and servers  Protect one I/O or power line  Portable instrumentation  Low clamping Voltage  Cordless phones  RoHS compliant  Digital cameras  Transient protection for data lines to IEC 61000-4-2(ESD)  Peripherals ±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)  MP3 players Mechanical Characteristics  Lead finish:100% matte Sn(Tin)  Mounting position: Any  Qualified max reflow temperature:260℃  Pure tin plating: 7 ~ 17 um  Pin flatness:≤3mil Rev.06.2 1 www.prisemi.com Transient Voltage Suppressor PTVSHC2EN7VU Electronics Parameter I Symbol Parameter VRWM Peak Reverse Working Voltage IR Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP PPP Peak Pulse Power CJ Junction Capacitance IF Forward Current VF Forward Voltage @ IF IF V VC VBR VRWM IR VF IT IPP Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Peak Reverse Working Voltage VRWM Breakdown Voltage VBR It =1mA Reverse Leakage Current IR VRWM =7V Clamping Voltage VC IPP=70A Junction Capacitance Cj VR=0V Min. Max. Units 7 V 9.5 V 1 μA 20 24 V 550 650 pF 8 tP = 8/20μs f = 1MHz Typ. 500 Absolute maximum rating@25℃ Rating Symbol Value Units Peak Pulse Power ( tP = 8/20μS ) Ppp 1400 W Lead Soldering Temperature TL 260 (10 sec) ℃ Operating Temperature TJ -55 to +125 ℃ TSTG -55 to +150 ℃ Storage Temperature Rev.06.2 2 www.prisemi.com Transient Voltage Suppressor PTVSHC2EN7VU Typical Characteristics tf=8μs IPP – Peak Pulse Current - % of IPP 100 100 % Of Rated Power 80 60 tP =20μs(IPP /2) 40 80 60 40 20 20 0 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 TL – Lead Temperature - ℃ t - Time -μs Fig 1.Pulse Waveform Fig 2.Power Derating Curve 700 25 f=1MHz Pulse waveform: tp=8/20us 600 C-Junction capacitance (pF) VC-Clamping Voltage (V) 20 15 10 5 500 400 300 200 100 0 0 15 30 45 IPP-Peak pulse current (A) 60 0 0 75 Fig 3. Clamping voltage vs. Peak pulse current 1 2 3 4 5 VR-Reverse voltage (V) 6 Fig 4. Capacitance vs. Reveres voltage Peak Pulse Power (W) 10000 1000 100 10 1 10 100 Pulse Duration(us) 1000 Fig 5. Non Repetitive Peak Pulse Power vs. Pulse time Rev.06.2 3 www.prisemi.com 7 Transient Voltage Suppressor PTVSHC2EN7VU Solder Reflow Recommendation Peak Temp=257℃, Ramp Rate=0.802deg. ℃/sec 280 240 200 160 120 80 40 0 0 30 60 90 120 150 180 240 210 270 300 330 360 390 420 450 480 Time (sec) PCB Design For TVS diodes a low-ohmic and low-inductive path to chassis earth is absolutely mandatory in order to achieve good ESD protection. Novices in the area of ESD protection should take following suggestions to heart:  Do not use stubs, but place the cathode of the TVS diode directly on the signal trace.  Do not make false economies and save copper for the ground connection.  Place via holes to ground as close as possible to the anode of the TVS diode.  Use as many via holes as possible for the ground connection.  Keep the length of via holes in mind! The longer the more inductance they will have. Rev.06.2 4 www.prisemi.com Transient Voltage Suppressor PTVSHC2EN7VU Product dimension (DFN1610-2L) D L b E 1 2 h h e Bottom View A C A1 Millimeters Dim MIN MAX A 0.45 0.60 A1 -- 0.05 b 0.75 0.85 c 0.10 0.20 D 1.55 e 1.65 1.10BSC E 0.95 1.05 L 0.35 0.45 h 0.15 0.25 0.6 0.625 1.0 1.225 1.85 Recommended Soldering Pad Unit:mm Ordering information Device Package Shipping PTVSHC2EN7VU DFN1610-2L (Pb-Free) 3000 / Tape & Reel Rev.06.2 5 www.prisemi.com Transient Voltage Suppressor PTVSHC2EN7VU IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.2 6 www.prisemi.com
PTVSHC2EN7VU
物料型号:PTVSHC2EN7VU 器件简介:PTVSHC2EN7VU是一款瞬态电压抑制二极管,用于保护便携式设备如手机、笔记本电脑和PDA免受静电放电和其他电压引起的瞬态事件的损害。

引脚分配:DFN1610-2L封装,2个引脚 参数特性: - 工作电压:7V - 峰值反向工作电压:7V - 击穿电压:8V至9.5V - 反向漏电流:最大1A - 钳位电压:20V至24V - 峰值脉冲功率:1400W - 结电容:500pF至650pF 功能详解:PTVSHC2EN7VU具有快速响应时间(<1ns)、低工作电压、低钳位电压和无器件退化的特点,符合IEC 61000-4-2标准,适用于数据线的瞬态保护。

应用信息:适用于手机、PDA、笔记本电脑、便携式仪器、无绳电话、数码相机、MP3播放器等。

封装信息:DFN1610-2L封装,纯锡镀层厚度为7至17微米,引脚平整度≤3mil,最大回流焊温度260℃。
PTVSHC2EN7VU 价格&库存

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PTVSHC2EN7VU
  •  国内价格
  • 1+0.22411
  • 30+0.21611
  • 100+0.20810
  • 500+0.19210
  • 1000+0.18409
  • 2000+0.17929

库存:2780