GA10SICP12-247

GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C) = = = 1200 V 120 m 25 A 100 Package 175°C Maximum Operating Temperature Gate Oxide free SiC switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier Excellent Gain Linearity Temperature Independent Switching Performance Low output capacitance Positive temperature co-efficient of RDS,ON Suitable for connecting an anti-parallel diode RoHS Compliant D G D S TO-247AB Advantages Applications Compatible with Si MOSFET/IGBT Gate Drive ICs > 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal distortion High Amplifier Bandwidth Reduced cooling requirements Reduced system size Down Hole Oil Drilling, Geothermal Instrumentation Hybrid Electric Vehicles (HEV) Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Induction Heating Uninterruptible Power Supply (UPS) Motor Drives Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit VDS ID IGM VGS = 0 V TC,MAX = 95 °C 1200 10 10 ID,max = 10 @ VDS VDSmax V A A 20 µs 30 25 91 -55 to 175 V V W °C A A A SiC Junction Transistor Drain – Source Voltage Continuous Drain Current Gate Peak Current Turn-Off Safe Operating Area RBSOA Short Circuit Safe Operating Area SCSOA Reverse Gate – Source Voltage Reverse Drain – Source Voltage Power Dissipation Storage Temperature V SG VSD Ptot Tstg TVJ = 175 oC, IG = 1 A, Clamped Inductive Load TVJ = 175 oC, IG = 1 A, VDS = 800 V, Non Repetitive TC = 95 °C A Free-wheeling Silicon Carbide diode DC-Forward Current Non Repetitive Peak Forward Current Surge Non Repetitive Forward Current IF I FM TC 150 ºC TC = 25 ºC, tP = 10 s IF,SM tP = 10 ms, half sine, TC = 25 ºC 10 280 65 RthJC RthJC SiC Junction Transistor SiC Diode 0.88 0.85 °C/W °C/W 0.6 Nm Thermal Characteristics Thermal resistance, junction - case Thermal resistance, junction - case Mechanical Properties Mounting torque Aug 2014 M http://www.genesicsemi.com/commercial-sic/sic-modules-copack/ Pg1 of 8 GA10SICP12-247 Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions min. Values typ. max. Unit SJT On-State Characteristics Drain – Source On Resistance RDS(ON) Gate Forward Voltage VGS(FWD) DC Current Gain hFE VDS = 5 V, ID = 10 A, Tj = 25 °C VDS = 5 V, ID = 10 A, Tj = 175 °C 120 150 220 3.3 3.1 100 TBD 350 530 700 20 nA tbd tbd pF pF tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd ns ns ns ns µJ µJ µJ ns ns ns µJ µJ µJ 1.55 V 0.8 tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd tbd V A ns ns ns J J nC ns ns J J nC ID = 10 A, IG = 200 mA, Tj = 25 °C ID = 10 A, IG = 400 mA, Tj = 125 °C ID = 10 A, IG = 800 mA, Tj = 175 °C IG = 500 mA, Tj = 25 °C IG = 500 mA, Tj = 175 °C m V SJT Off-State Characteristics Drain Leakage Current IDSS Gate Leakage Current ISG VR = 1200 V, VGS = 0 V, Tj = 25 °C VR = 1200 V, V GS = 0 V, Tj = 125 °C VR = 1200 V, V GS = 0 V, Tj = 175 °C VSG = 20 V, Tj = 25 °C Ciss Crss/Coss VGS = 0 V, V D = 1 V, f = 1 MHz VD = 1 V, f = 1 MHz nA SJT Capacitance Characteristics Input Capacitance Reverse Transfer/Output Capacitance SJT Switching Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets VDD = 800 V, ID = 10 A, RG(on) = RG(off) = tbd , FWD = GB10SLT12, Tj = 25 ºC Refer to Figure 15 for gate current waveform VDD = 800 V, ID = 10 A, RG(on) = RG(off) = tbd , FWD = GB10SLT12, Tj = 175 ºC Refer to Figure 15 for gate current waveform Free-wheeling Silicon Carbide Schottky Diode Forward Voltage Diode Knee Voltage Peak Reverse Recovery Current Reverse Recovery Time Rise Time Fall Time Turn-On Energy Loss Per Pulse Turn-Off Energy Loss Per Pulse Reverse Recovery Charge Rise Time Fall Time Turn-On Energy Loss Per Pulse Turn-Off Energy Loss Per Pulse Reverse Recovery Charge Aug 2014 VF VD(knee) Irrm trr tr tf Eon Eoff Qrr tr tf Eon Eoff Qrr IF = 10 A, VGE = 0 V, Tj = 25 ºC (175 ºC ) Tj = 25 ºC, IF = 1 mA IF = 10 A, VGE = 0 V, VR = 800 V, -dI F/dt = 625 A/µs, Tj = 175 ºC VDD= 800 V, ID = 10 A, Rgon = Rgoff = tbd , Tj= 25 ºC VDD= 800 V, ID = 10 A, Rgon = Rgoff = tbd , Tj= 175 ºC http://www.genesicsemi.com/commercial-sic/sic-modules-copack/ Pg2 of 8 GA10SICP12-247 Figures TBD Figure 1: Typical Output Characteristics at 25 °C TBD Figure 3: Typical Output Characteristics at 175 °C TBD Figure 5: Normalized On-Resistance and Current Gain vs. Temperature Aug 2014 TBD Figure 2: Typical Output Characteristics at 125 °C TBD Figure 4: Typical Gate Source I-V Characteristics vs. Temperature TBD Figure 6: Typical Blocking Characteristics http://www.genesicsemi.com/commercial-sic/sic-modules-copack/ Pg3 of 8 GA10SICP12-247 TBD Figure 7: Capacitance Characteristics TBD Figure 9: Typical Hard-switched Turn On Waveforms TBD Figure 11: Typical Turn On Energy Losses and Switching Times vs. Temperature Aug 2014 TBD Figure 8: Capacitance Characteristics TBD Figure 10: Typical Hard-switched Turn Off Waveforms TBD Figure 12: Typical Turn Off Energy Losses and Switching Times vs. Temperature http://www.genesicsemi.com/commercial-sic/sic-modules-copack/ Pg4 of 8 GA10SICP12-247 TBD Figure 13: Typical Turn On Energy Losses vs. Drain Current TBD Figure 15: Typical Gate Current Waveform TBD Figure 17: Power Derating Curve 1 TBD Figure 14: Typical Turn Off Energy Losses vs. Drain Current TBD Figure 16: Typical Hard Switched Device Power Loss vs. 1 Switching Frequency TBD Figure 18: Forward Bias Safe Operating Area – Representative values based on device switching energy loss. Actual losses will depend on gate drive conditions, device load, and circuit topology. Aug 2014 http://www.genesicsemi.com/commercial-sic/sic-modules-copack/ Pg5 of 8 GA10SICP12-247 TBD Figure 19: Turn-Off Safe Operating Area TBD Figure 20: Transient Thermal Impedance Figure 21: Typical FWD Forward Characteristics Aug 2014 http://www.genesicsemi.com/commercial-sic/sic-modules-copack/ Pg6 of 8 GA10SICP12-247 Gate Drive Theory of Operation for the GA10SICP12-263 The SJT transistor is a current controlled transistor which requires a positive gate current for turn-on as well as to remain in on-state. An ideal gate current waveform for ultra-fast switching of the SJT, while maintaining low gate drive losses, is shown in Figure 22. Figure 22: Idealized Gate Current Waveform Gate Currents, IG,pk/-IG,pk and Voltages during Turn-On and Turn-Off An SJT is rapidly switched from its blocking state to on-state, when the necessary gate charge, Q G, for turn-on is supplied by a burst of high gate current, IG,on, until the gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged. The IG,pon pulse should ideally terminate, when the drain voltage falls to its on-state value, in order to avoid unnecessary drive losses during the steady on-state. In practice, the rise time of the IG,on pulse is affected by the parasitic inductances, Lpar in the module and drive circuit. A voltage developed across the parasitic inductance in the source path, Ls, can de-bias the gate-source junction, when high drain currents begin to flow through the device. The applied gate voltage should be maintained high enough, above the VGS,ON level to counter these effects. A high negative peak current, -IG,off is recommended at the start of the turn-off transition, in order to rapidly sweep out the injected carriers from the gate, and achieve rapid turn-off. While satisfactory turn off can be achieved with VGS = 0 V, a negative gate voltage VGS may be used in order to speed up the turn-off transition. Steady On-State After the device is turned on, IG may be advantageously lowered to IG,steady for reducing unnecessary gate drive losses. The IG,steady is determined by noting the DC current gain, hFE, of the device The desired IG,steady is determined by the peak device junction temperature TJ during operation, drain current ID, DC current gain hFE, and a 50 % safety margin to ensure operating the device in the saturation region with low on-state voltage drop by the equation: Aug 2014 http://www.genesicsemi.com/commercial-sic/sic-modules-copack/ Pg7 of 8 GA10SICP12-247 Package Dimensions: TO-247AB PACKAGE OUTLINE 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Revision History Date 2014/08/25 Revision 1 Comments Gate Drive Theory Update 2013/09/12 0 Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Aug 2014 http://www.genesicsemi.com/commercial-sic/sic-modules-copack/ Pg8 of 8