TPH3207WS

TPH3207WS Not recommended for new designs—see TP65H035WS 650V GaN FET in TO-247 (source tab) Description Features The TPH3207WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Package Package Configuration 3 lead TO-247 Source Part Number TPH3207WS  JEDEC qualified GaN technology  Dynamic RDS(on)eff production tested  Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability  Very low QRR  Reduced crossover loss  RoHS compliant and Halogen-free packaging Benefits  Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost  Achieves increased efficiency in both hard- and softswitched circuits  Easy to drive with commonly-used gate drivers  GSD pin layout improves high speed design Applications     TPH3207WS TO-247 (top view) S Datacom Broad industrial PV inverter Servo motor Key Specifications VDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mΩ) max* G S D 41 QRR (nC) typ 175 QG (nC) typ 28 * Dynamic on-resistance; see Figures 19 and 20 Common Topology Power Recommendations Cascode Schematic Symbol Cascode Device Structure CCM bridgeless totem-pole* 3821W max Hard-switched inverter** 4616W max Conditions: FSW=45kHz; TJ=115°C; THEATSINK=90°C; insulator between device and heatsink (6 mil Sil-Pad® K-10); power de-rates at lower voltages with constant current * VIN=230VAC; VOUT=390VDC ** VIN=380VDC; VOUT=240VAC July 16, 2018 © 2018 Transphorm Inc. Subject to change without notice. tph3207w.13 1 TPH3207WS Absolute Maximum Ratings (Tc=25°C unless otherwise stated.) Symbol VDSS Parameter Limit Value Unit Drain to source voltage (TJ = -55°C to 150°C) 650 Transient drain to source voltage a 800 Gate to source voltage ±18 Maximum power dissipation @TC=25°C 178 W Continuous drain current @TC=25°C b 50 A Continuous drain current @TC=100°C b 32 A Pulsed drain current (pulse width: 10µs) 240 A (di/dt)RDMC Reverse diode di/dt, repetitive c 1700 A/µs (di/dt)RDMT Reverse diode di/dt, transient d 3600 A/µs Case -55 to +150 °C Junction -55 to +150 °C -55 to +150 °C 260 °C Typical Unit V(TR)DSS VGSS PD ID IDM TC TJ TS TSOLD Operating temperature Storage temperature Soldering peak temperature e V Notes: a. In off-state, spike duty cycle D