PMK50XP,518

PMK50XP P-channel TrenchMOS extremely low level FET Rev. 02 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance 1.3 Applications „ Battery management „ Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - - -20 V ID drain current Tsp = 25 °C; VGS = -4.5 V; see Figure 1; see Figure 3 - - -7.9 A Ptot total power dissipation Tsp = 25 °C; see Figure 2 - - 5 W VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C; see Figure 9; see Figure 10 - 40 50 mΩ - 1.3 - nC Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge VGS = -4.5 V; ID = -4.7 A; VDS = -10 V; see Figure 11; see Figure 12 PMK50XP Nexperia P-channel TrenchMOS extremely low level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate 5 D drain 6 D drain 7 D drain 8 D drain Simplified outline 8 Graphic symbol D 5 G 1 4 S SOT96-1 (SO8) 003aaa671 3. Ordering information Table 3. Ordering information Type number PMK50XP PMK50XP Product data sheet Package Name Description Version SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 © Nexperia B.V. 2017. All rights reserved 2 of 13 PMK50XP Nexperia P-channel TrenchMOS extremely low level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - - -20 V VDGR drain-gate voltage 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - - -20 V VGS gate-source voltage ID drain current -12 - 12 V Tsp = 25 °C; VGS = -4.5 V; see Figure 1; see Figure 3 - - -7.9 A Tsp = 100 °C; VGS = -4.5 V; see Figure 1 - - -5 A IDM peak drain current Tsp = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - - -31.6 A Ptot total power dissipation Tsp = 25 °C; see Figure 2 - - 5 W Tstg storage temperature -55 - 150 °C Tj junction temperature -55 - 150 °C Source-drain diode IS source current Tsp = 25 °C - - -4.1 A ISM peak source current Tsp = 25 °C; tp ≤ 10 µs; pulsed - - -16.4 A 003aab642 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 Fig 1. 003aab946 120 50 100 150 Tsp (°C) 200 Product data sheet 50 100 150 200 Tsp (°C) Normalized continuous drain current as a function of solder point temperature PMK50XP 0 Fig 2. Normalized total power dissipation as a function of solder point temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 © Nexperia B.V. 2017. All rights reserved 3 of 13 PMK50XP Nexperia P-channel TrenchMOS extremely low level FET 003aab643 −103 ID (A) −102 Limit RDSon = −VDS / −ID tp = 10 μs −10 100 μ s −1 1 ms 10 ms DC 100 ms −10 -1 −10-1 −1 −10 −102 VDS (V) Tsp = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point see Figure 4 - - 25 K/W 003aab644 102 Zth(j-sp) (K/W) 10 δ = 0.5 0.2 0.1 0.05 1 0.02 δ= P tp T 10-1 single pulse t tp T 10-2 10-5 Fig 4. 10-4 10-3 10-2 10-1 1 tp (s) 10 Transient thermal impedance from junction to solder point as a function of pulse duration PMK50XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 © Nexperia B.V. 2017. All rights reserved 4 of 13 PMK50XP Nexperia P-channel TrenchMOS extremely low level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = -55 °C -18 - - V ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGS(th) gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = -55 °C; see Figure 7; see Figure 8 - - -1.1 V ID = -250 µA; VDS = VGS; Tj = 150 °C; see Figure 7; see Figure 8 -0.35 - - V ID = -250 µA; VDS = VGS; Tj = 25 °C; see Figure 7; see Figure 8 -0.55 -0.75 -0.95 V -1 µA IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - VDS = -20 V; VGS = 0 V; Tj = 70 °C - - -5 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - -10 -100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - -10 -100 nA VGS = -2.5 V; ID = -2.3 A; Tj = 25 °C; see Figure 9; see Figure 10 - 56 70 mΩ VGS = -4.5 V; ID = -2.8 A; Tj = 150 °C; see Figure 9; see Figure 10 - 64 80 mΩ VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C; see Figure 9; see Figure 10 - 40 50 mΩ ID = -4.7 A; VDS = -10 V; VGS = -4.5 V; see Figure 11; see Figure 12 - 10 - nC - 2.2 - nC RDSon drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge - 1.3 - nC VGS(pl) gate-source plateau voltage ID = -4.7 A; VDS = -10 V; see Figure 11; see Figure 12 - -1.6 - V Ciss input capacitance VDS = -20 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 13 - 1020 - pF - 140 - pF - 100 - pF - 8.5 - ns Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VDS = -10 V; RL = 10 Ω; VGS = -4.5 V; RG(ext) = 6 Ω tr rise time - 7.5 - ns td(off) turn-off delay time - 82 - ns tf fall time - 35 - ns - -0.77 -1.2 V Source-drain diode VSD source-drain voltage PMK50XP Product data sheet IS = -1.7 A; VGS = 0 V; Tj = 25 °C; see Figure 14 All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 © Nexperia B.V. 2017. All rights reserved 5 of 13 PMK50XP Nexperia P-channel TrenchMOS extremely low level FET 003aab645 −20 −4.5 −3.5 −3 −2.5 ID (A) 003aab647 −20 −2.3 ID (A) −2.1 −15 −15 −1.9 −10 −10 −1.7 VGS (V) = −1.5V −5 −5 25 °C Tj = 150 °C 0 0 −0.5 −1 −1.5 VDS (V) 0 −2 Tj = 25 °C Fig 5. −1 0 −2 VGS (V) −3 VDS > ID x RDSon Output characteristics: drain current as a function of drain-source voltage; typical values 03ar95 -1.2 VGS(th) (V) Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aab389 10-3 ID (A) max -0.8 Fig 6. 10-4 typ min typ max min 10-5 -0.4 0 -60 10-6 0 60 120 Tj (°C) 180 0.2 0.4 0.6 0.8 1 VGS (V) 1.2 Tj = 25 °C; VDS = -5 V Fig 7. Gate-source threshold voltage as a function of junction temperature PMK50XP Product data sheet Fig 8. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 © Nexperia B.V. 2017. All rights reserved 6 of 13 PMK50XP Nexperia P-channel TrenchMOS extremely low level FET 03aq10 2 003aab646 120 a VGS (V) = -1.9 -2.1 RDSon (mΩ) -2.3 1.5 90 1 60 -2.5 -3 -3.5 -4.5 0.5 30 0 -60 0 0 60 120 Tj (°C) 180 0 -10 -20 I D (A) -30 Tj = 25 °C Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 10. Drain-source on-state resistance as a function of drain current; typical values 03aq09 -5 VDS ID = -4.7 A Tj = 25 °C VDS = -10 V VGS (V) -4 ID VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 003aaa508 0 0 4 8 QG (nC) 12 Fig 11. Gate-source voltage as a function of gate charge; typical values PMK50XP Product data sheet Fig 12. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 © Nexperia B.V. 2017. All rights reserved 7 of 13 PMK50XP Nexperia P-channel TrenchMOS extremely low level FET 03aq08 104 003aab278 20 -IS (A) C (pF) 15 103 Ciss 10 150 °C Coss Crss 2 10 Tj = 25 °C 5 10 10-1 1 10 -VDS (V) 102 VGS = 0 V; f = 1 MHz Product data sheet 0 0.5 1 -VSD (V) 1.5 VGS = 0 V Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values PMK50XP 0 Fig 14. Source current as a function of source-drain voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 © Nexperia B.V. 2017. All rights reserved 8 of 13 PMK50XP Nexperia P-channel TrenchMOS extremely low level FET 7. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 4 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 inches 0.069 0.010 0.057 0.004 0.049 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.05 0.01 0.01 0.004 0.028 0.012 0.244 0.039 0.028 0.041 0.228 0.016 0.024 θ 8o o 0 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18 Fig 15. Package outline SOT96-1 (SO8) PMK50XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 © Nexperia B.V. 2017. All rights reserved 9 of 13 PMK50XP Nexperia P-channel TrenchMOS extremely low level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PMK50XP_2 20100428 Product data sheet - PMK50XP_1 - - Modifications: PMK50XP_1 PMK50XP Product data sheet • Various changes to content. 20070917 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 © Nexperia B.V. 2017. All rights reserved 10 of 13 PMK50XP Nexperia P-channel TrenchMOS extremely low level FET 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. PMK50XP Product data sheet Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the Nexperia product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. Nexperia does not accept any liability in this respect. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 © Nexperia B.V. 2017. All rights reserved 11 of 13 PMK50XP Nexperia P-channel TrenchMOS extremely low level FET Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com PMK50XP Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 28 April 2010 © Nexperia B.V. 2017. All rights reserved 12 of 13 Nexperia PMK50XP P-channel TrenchMOS extremely low level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 28 April 2010