TPH3206LS

TPH3206LS Not recommended for new designs—see TPH3206LSB 600V Cascode GaN FET in PQFN88 (source tab) Description Features The TPH3206LS 600V, 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. Transphorm is a leading-edge wide band gap supplier with world-class innovation and a portfolio of fully-qualified GaN transistors that enables increased performance and reduced overall system size and cost. Related Literature • AN0009: Recommended External Circuitry for GaN FETs • AN0003: Printed Circuit Board Layout and Probing • • • • • Easy to drive—compatible with standard gate drivers Low conduction and switching losses Low Qrr of 52nC—no free-wheeling diode required JEDEC-qualified GaN technology RoHS compliant and Halogen-free Benefits • • • • Increased efficiency through fast switching Increased power density Reduced system size and weight Enables more efficient topologies—easy to implement bridgeless totem-pole designs • Lower BOM cost Applications Ordering Information Package Package Configuration 8 x 8mm PQFN Common Source Part Number* TPH3206LS • • • • Renewable energy Industrial Telecom and datacom Servo motors * Add “-TR” suffix for tape and reel; see page 9 Key Specifications TPH3206LS 8x8 PQFN (bottom view) S D VDS (V) min 600 VTDS (V) max 750 RDS(on) (mΩ) max* 180 Qrr (nC) typ 52 Qg (nC) typ 6 * Dynamic R(on) G Cascode Device Structure April 6, 2017 tph3206ls.9 © 2017 Transphorm Inc. Subject to change without notice. 1 TPH3206LS Absolute Maximum Ratings (TC=25°C unless otherwise stated) Symbol Parameter ID25°C Continuous drain current @TC=25°C ID100°C Continuous drain current @TC=100°C a a Limit Value Unit 17 A 12 A IDM Pulsed drain current (pulse width: 100µs) 60 A VDSS Drain to source voltage 600 V VTDS Transient drain to source voltage b 750 V VGSS Gate to source voltage ±18 V Maximum power dissipation 96 W Case -55 to +150 °C Junction -55 to +175 °C -55 to +150 °C 260 °C Typical Unit 1.55 °C/W 45 °C/W PD25°C TC TJ TS TCSOLD Operating temperature Storage temperature Soldering peak temperature c Thermal Resistance Symbol Parameter RΘJC Junction-to-case RΘJA Junction-to-ambient d Notes: a. For high current operation, see application note AN0009 b. In off-state, spike duty cycle D