TPH3205WSB

TPH3205WS Not recommended for new designs—see TPH3205WSB 600V Cascode GaN FET in TO-247 (source tab) Description Features The TPH3205WS 600V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. Transphorm is a leading-edge wide band gap supplier with world-class innovation and a portfolio of fully-qualified GaN transistors that enables increased performance and reduced overall system size and cost. Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing TPH3205WS Easy to drive—compatible with standard gate drivers Low conduction and switching losses Low Qrr of 136nC—no free-wheeling diode required GSD pin layout improves high speed design JEDEC-qualified GaN technology RoHS compliant and Halogen-free Benefits     Increased efficiency through fast switching Increased power density Reduced system size and weight Enables more efficient topologies—easy to implement bridgeless totem-pole designs  Lower BOM cost Applications Ordering Information Package Package Configuration 3 Lead TO-247 Common Source Part Number            Renewable energy Industrial Automotive Telecom and datacom Servo motors Key Specifications TPH3205WS TO-247 (top view) S VDS (V) min 600 VTDS (V) max 750 RDS(on) (mΩ) max* G 63 Qrr (nC) typ 136 Qg (nC) typ 28 * Includes dynamic R(on) S D Cascode Device Structure November 14, 2016 tph3205ws.17 © 2016 Transphorm Inc. Subject to change without notice. 1 TPH3205WS Absolute Maximum Ratings (TC=25°C unless otherwise stated) Symbol Parameter Limit Value Unit ID25°C Continuous drain current @TC=25°C a 36 A ID100°C Continuous drain current @TC=100°C a 25 A IDM Pulsed drain current (pulse width: 10µs) 150 A VDSS Drain to source voltage 600 V VTDS Transient drain to source voltage b 750 V VGSS Gate to source voltage ±18 V Maximum power dissipation 150 W Case -55 to +150 °C Junction -55 to +175 °C -55 to +150 °C 260 °C Typical Unit 1 °C/W 40 °C/W PD25°C TC TJ TS TCSOLD Operating temperature Storage temperature Soldering peak temperature c Thermal Resistance Symbol Parameter RΘJC Junction-to-case RΘJA Junction-to-ambient Notes: a. For high current operation, see application note AN0009 b. In off-state, spike duty cycle D