GA05JT01-46

GA05JT01-46 Normally – OFF Silicon Carbide Junction Transistor Features Package • • • • • • • • • • RoHS Compliant 210°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Compatible with 5 V TTL Gate Drive Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode VDS = 100 V RDS(ON) = 240 mΩ ID = 9A hFE (Tc = 25°C) = 110 (Tc = 25°C) D G D S G S TO-46 Advantages Applications • • • • • • • • • • • • • • Compatible with Si MOSFET/IGBT Gate Drive ICs > 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Amplifier Bandwidth Down Hole Oil Drilling Geothermal Instrumentation Solenoid Actuators General Purpose High-Temperature Switching Amplifiers Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Table of Contents Section I: Absolute Maximum Ratings ...........................................................................................................1 Section II: Static Electrical Characteristics ....................................................................................................2 Section III: Dynamic Electrical Characteristics .............................................................................................2 Section IV: Figures ...........................................................................................................................................3 Section V: Driving the GA05JT01-46...............................................................................................................7 Section VI: Package Dimensions ................................................................................................................. 10 Section VII: SPICE Model Parameters ......................................................................................................... 11 Section I: Absolute Maximum Ratings Parameter Drain – Source Voltage Continuous Drain Current Continuous Gate Current Symbol VDS ID IGM Turn-Off Safe Operating Area RBSOA Short Circuit Safe Operating Area SCSOA Reverse Gate – Source Voltage Reverse Drain – Source Voltage Power Dissipation Operating and Storage Temperature VSG VSD Ptot Tstg Conditions VGS = 0 V TJ = 210°C, TC = 25°C TVJ = 210°C, IG = 0.5 A, Clamped Inductive Load TVJ = 210°C, IG = 0.5 A, VDS = 70 V, Non Repetitive TJ = 210°C, TC = 25°C Value 100 5.8 0.5 ID,max = 9 @ VDS ≤ VDSmax Unit V A A Notes A Fig. 18 >20 µs 30 25 20 -55 to 210 V V W °C Fig. 16 Latest version of this datasheet at: http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Dec 2014 Pg 1 of 10 GA05JT01-46 Section II: Static Electrical Characteristics Parameter Symbol Conditions Min. Value Typical Max. Unit Notes mΩ Fig. 5 V Fig. 7 – Fig. 5 μA Fig. 6 A: On State Drain – Source On Resistance RDS(ON) ID = 5 A, Tj = 25 °C ID = 5 A, Tj = 125 °C ID = 5 A, Tj = 175 °C ID = 5 A, Tj = 210 °C Gate – Source Saturation Voltage VGS,sat ID = 5 A, ID/IG = 40, Tj = 25 °C ID = 5 A, ID/IG = 30, Tj = 175 °C hFE VDS = 5 V, ID = 5 A, Tj = 25 °C VDS = 5 V, ID = 5 A, Tj = 125 °C VDS = 5 V, ID = 5 A, Tj = 175 °C VDS = 5 V, ID = 5 A, Tj = 210 °C Drain Leakage Current IDSS VR = 100 V, VGS = 0 V, Tj = 25 °C VR = 100 V, VGS = 0 V, Tj = 125 °C VR = 100 V, VGS = 0 V, Tj = 210 °C Gate Leakage Current ISG VSG = 20 V, Tj = 25 °C DC Current Gain 240 368 455 580 3.45 3.22 113 79 72 70 B: Off State 10 50 100 20 100 500 1000 nA C: Thermal Thermal resistance, junction - case RthJC Assumes thermal conduction through baseplate only actual value may be lower 9.86 °C/W Fig. 19 Unit Notes 547 45 0.2 pF pF µJ Fig. 7 Fig. 7 Fig. 8 83 pF Section III: Dynamic Electrical Characteristics Parameter Symbol Conditions Min. Value Typical Max. A: Capacitance and Gate Charge Input Capacitance Reverse Transfer/Output Capacitance Output Capacitance Stored Energy Effective Output Capacitance, time related Effective Output Capacitance, energy related Gate-Source Charge Gate-Drain Charge Gate Charge - Total B: Switching VGS = 0 V, VD = 100 V, f = 1 MHz VD = 100 V, f = 1 MHz VGS = 0 V, VD = 100 V, f = 1 MHz Coss,tr ID = constant, VGS = 0 V, VDS = 0…70 V Coss,er VGS = 0 V, VDS = 0…70 V 67 pF QGS QGD QG VGS = -5…3 V VGS = 0 V, VDS = 0…70 V 3.7 5.8 9.5 nC nC nC 14.5 Ω 0.37 8.0 7.4 14.0 4.2 8.0 7.8 28.0 2.3 3.6 0.4 4.0 3.6 0.5 4.1 Ω ns ns ns ns ns ns ns ns µJ µJ µJ µJ µJ µJ 1 Internal Gate Resistance – zero bias Internal Gate Resistance – ON Turn On Delay Time Fall Time, VDS Turn Off Delay Time Rise Time, VDS Turn On Delay Time Fall Time, VDS Turn Off Delay Time Rise Time, VDS Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy 1 Ciss Crss/Coss EOSS f = 1 MHz, V = 50 mV, V =V =0V, DS GS RG(INT-ZERO) T = 210 ºC AC j RG(INT-ON) VGS > 2.5 V, VDS = 0 V, Tj = 210 ºC td(on) Tj = 25 ºC, VDS = 70 V, tf ID = 5 A, Resistive Load Refer to Section V: for additional driving td(off) information tr td(on) Tj = 210 ºC, VDS = 70 V, tf ID = 5 A, Resistive Load Refer to Section V: for additional driving td(off) information tr Eon Tj = 25 ºC, VDS = 70 V, Eoff ID = 5 A, Inductive Load Etot Eon Tj = 210 ºC, VDS = 70 V, Eoff ID = 5 A, Inductive Load Etot Fig. 11, 13 Fig. 12, 14 Fig. 11 Fig. 12 Fig. 11, 13 Fig. 12, 14 Fig. 11 Fig. 12 – All times are relative to the Drain-Source Voltage VDS Latest version of this datasheet at: http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Dec 2014 Pg 2 of 10 GA05JT01-46 Section IV: Figures A: Static Characteristics Figure 1: Typical Output Characteristics at 25 °C Figure 2: Typical Output Characteristics at 125 °C Figure 3: Typical Output Characteristics at 210 °C Figure 4: Drain-Source Voltage vs. Gate Current Figure 5: DC Current Gain and Normalized On-Resistance vs. Temperature Figure 6: DC Current Gain vs. Drain Current Latest version of this datasheet at: http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Dec 2014 Pg 3 of 10 GA05JT01-46 Figure 7: Typical Gate – Source Saturation Voltage Figure 8: Typical Blocking Characteristics B: Dynamic Characteristics Figure 9: Input, Output, and Reverse Transfer Capacitance Figure 10: Energy stored in Output Capacitance Figure 11: Typical Turn On Energy Losses and Switching Times vs. Temperature Figure 12: Typical Turn Off Energy Losses and Switching Times vs. Temperature Latest version of this datasheet at: http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Dec 2014 Pg 4 of 10 GA05JT01-46 Figure 13: Typical Turn On Energy Losses and Switching Times vs. Drain Current Figure 14: Typical Turn Off Energy Losses and Switching Times vs. Drain Current C: Current and Power Derating Figure 15: Typical Hard Switched Device Power Loss vs. Switching Frequency 2 Figure 17: Forward Bias Safe Operating Area at Tc= 25 oC 2 Figure 16: Power Derating Curve Figure 18: Turn-Off Safe Operating Area – Representative values based on device conduction and switching loss. Actual losses will depend on gate drive conditions, device load, and circuit topology. Latest version of this datasheet at: http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Dec 2014 Pg 5 of 10 GA05JT01-46 Figure 19: Transient Thermal Impedance Figure 20: Drain Current Derating vs. Pulse Width Latest version of this datasheet at: http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Dec 2014 Pg 6 of 10 GA05JT01-46 Section V: Driving the GA05JT01-46 The GA05JT01-46 is a current controlled SiC transistor which requires a positive gate current for turn-on and to remain in on-state. It may be driven by different drive topologies depending on the intended application. Table 1: Estimated Power Consumption and switching frequencies for various Gate Drive topologies. Gate Drive Power Switching Drive Topology Consumption Frequency Simple TTL High Low Constant Current Medium Medium High Speed – Boost Capacitor Medium High High Speed – Boost Inductor Low High Proportional Lowest Medium Pulsed Power Medium N/A A: Simple TTL Drive The GA05JT01-46 may be driven by 5 V TTL logic by using a simple current amplification stage. The current amplifier output current must meet or exceed the steady state gate current, IG,steady, required to operate the GA05JT01-46. An external gate resistor RG, shown in the Figure 22 topology, sets IG,steady to the required level which is dependent on the SJT drain current ID and DC current gain hFE, RG may be calculated from the equation below. The values of hFE and VGS,sat may be read from Figure 6 and Figure 7, respectively. VEC,sat can be taken from the PNP datasheet, a partial list of high-temperature PNP and NPN transistors options is given below. High-temperature MOSFETs may also be used in the topology. 𝑅𝑅𝐺𝐺,𝑚𝑚𝑚𝑚𝑚𝑚 = �5.0 𝑉𝑉 − 𝑉𝑉𝐸𝐸𝐸𝐸,𝑠𝑠𝑠𝑠𝑠𝑠 (𝑃𝑃𝑃𝑃𝑃𝑃) − 𝑉𝑉𝐺𝐺𝐺𝐺,𝑠𝑠𝑠𝑠𝑠𝑠 (𝑆𝑆𝑆𝑆𝑆𝑆)� ∗ ℎ𝐹𝐹𝐹𝐹 (𝑇𝑇, 𝐼𝐼𝐷𝐷 ) 𝐼𝐼𝐷𝐷 ∗ 1.5 Inverting Current Boost Stage 5V SiC SJT PNP TTL Gate Signal D IG,steady 0/5V TTL i/p inverted 0/5V TTL o/p G RG S NPN Figure 21: Simple TTL Gate Drive Topology Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving BJT Part Number Type Tj,max (°C) PHPT60603PY PHPT60603NY 2N2222 2N6730 2N2905 2N5883 2N5885 PNP NPN NPN PNP PNP PNP NPN 175 175 200 200 200 200 200 Latest version of this datasheet at: http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Dec 2014 Pg 7 of 10 GA05JT01-46 B: High Speed Driving For ultra high speed GA05JT01-46 switching (tr, tf < 20 ns) while maintaining low gate drive losses the supplied gate current should include a positive current peak during turn-on, a negative voltage peak during turn-off, and continuous gate current IG to remain on. An SJT is rapidly switched from its blocking state to on-state, when the necessary gate charge for turn-on, QG, is supplied by a burst of high gate current until the gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged. Ideally, the burst should terminate when the drain voltage has fallen to its on-state value in order to avoid unnecessary drive losses. A negative voltage peak is recommended for the turn-off transition in order to ensure that the gate current is not being supplied under high dV/dt due to the Miller effect. While satisfactory turn off can be achieved with VGS = 0 V, a negative VGS value may be used in order to speed up the turn-off transition. B:1: High Speed, Low Loss Drive with Boost Capacitor The GA05JT01-46 may be driven using a High Speed, Low Loss Drive with Boost Capacitor topology in which multiple voltage levels, a gate resistor, and a gate capacitor are used to provide current peaks at turn-on and turn-off for fast switching and a continuous gate current while in on-state. As shown in Figure 23, in this topology two gate driver ICs are utilized. An external gate resistor RG is driven by a low voltage driver to supply the continuous gate current throughout on-state.and a gate capacitor CG is driven at a higher voltage level to supply a high current peak at turn-on and turn-off. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4) from GeneSiC Semiconductor utilizing this topology is commercially available for high and low-side driving, its datasheet provides additional details about this drive topology. VGH CG Gate Signal IG G VGL D Gate SiC SJT S RG Figure 22: High Speed, Low Loss Drive with Boost Capacitor Topology B:2: High Speed, Low Loss Drive with Boost Inductor A High Speed, Low-Loss Driver with Boost Inductor is also capable of driving the GA05JT01-46 at high-speed. It utilizes a gate drive inductor instead of a capacitor to provide the high-current gate current pulses IG,on and IG,off. During operation, inductor L is charged to a specified IG,on current value then made to discharge IL into the SJT gate pin using logic control of S1, S2, S3, and S4, as shown in Figure 24. After turn on, while the device remains on the necessary steady state gate current IG,steady is supplied from source VCC through RG. Please refer to the article “A current-source concept for fast and efficient driving of silicon carbide transistors” by Dr. Jacek Rąbkowski for additional information on this driving topology.3 VCC S1 VCC S2 L VEE S3 SiC SJT D G RG S4 S VEE Figure 23: High Speed, Low-Loss Driver with Boost Inductor Topology 3 – Archives of Electrical Engineering. Volume 62, Issue 2, Pages 333–343, ISSN (Print) 0004-0746, DOI: 10.2478/aee-2013-0026, June 2013 Latest version of this datasheet at: http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Dec 2014 Pg 8 of 10 GA05JT01-46 C: Proportional Gate Current Driving A proportional gate drive topology may be beneficial for applications in which the GA05JT01-46 will operate over a wide range of drain current conditions to lower the gate drive power consumption. A proportional gate driver relies on instantaneous drain current ID feedback to vary the steady state gate current IG,steady supplied to the GA05JT01-46. C:1: Voltage Controlled Proportional Driver A voltage controlled proportional driver relies on a gate drive integrated circuit to detect the GA05JT01-46 drain-source voltage VDS during onstate to sense ID. The integrated circuit will then increase or decrease IG in response to ID. This allows IG and gate drive power consumption to reduce while ID is low or for IG to increase when ID increases. A high voltage diode connected between the drain and sense protects the integrated circuit from high-voltage when blocking. A simplified version of this topology is shown in Figure 25. Additional information will be available in the future at http://www.genesicsemi.com/references/product-notes/. HV Diode Sense Gate Signal Proportional Gate Current Driver Signal D G Output IG,steady SiC SJT S Figure 24: Simplified Voltage Controlled Proportional Driver C:2: Current Controlled Proportional Driver The current controlled proportional driver relies on a low-loss transformer in the drain or source path to provide feedback of the GA05JT01-46 drain current during on-state to supply IG,steady into the gate. IG,steady will increase or decrease in response to ID at a fixed forced current gain which is set be the turns ratio of the transformer, hforce = ID / IG = N2 / N1. GA05JT01-46 is initially tuned-on using a gate current pulse supplied into an RC drive circuit to allow ID current to begin flowing. This topology allows IG,steady and the gate drive power consumption to reduce while ID is relatively low or for IG,steady to increase when ID increases. A simplified version of this topology is shown in Figure 26. Additional information will be available in the future at http://www.genesicsemi.com/references/product-notes/. N2 SiC SJT Gate Signal D G S N3 N1 N2 Figure 25: Simplified Current Controlled Proportional Driver Latest version of this datasheet at: http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Dec 2014 Pg 9 of 10 GA05JT01-46 Section VI: Package Dimensions TO-46 PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Revision History Date 2014/12/12 Revision 1 Comments Updated Electrical Characteristics 2014/08/25 0 Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Latest version of this datasheet at: http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Dec 2014 Pg 10 of 10 GA05JT01-46 Section VII: SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/hit_sic/sjt/GA05JT01-46_SPICE.pdf into LTSPICE (version 4) software for simulation of the GA05JT01-46. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 12-DEC-2014 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY OF ANY KIND EITHER EXPRESSED OR * IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * .model GA05JT01 NPN + IS 9.8338E-48 + ISE 1.0733E-26 + EG 3.23 + BF 135 + BR 0.55 + IKF 200 + NF 1 + NE 2. + RB 14.5 + IRB 0.002 + RBM 0.37 + RE 0.01 + RC 0.23 + CJC 2.16E-10 + VJC 3.656 + MJC 0.4717 + CJE 5.021E-10 + VJE 2.95 + MJE 0.4867 + XTI 3 + XTB -1.0 + TRC1 1.050E-2 + VCEO 100 + ICRATING 9 + MFG GeneSiC_Semiconductor * * End of GA05JT01 SPICE Model Dec 2014 http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/ Pg 1 of 1