PMFPB8040XP,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PMFPB8040XP 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • 1.8 V RDSon rated for low-voltage gate drive Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm Exposed drain pad for excellent thermal conduction Integrated ultra low VF MEGA Schottky diode 3. Applications • • • • Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C - - -20 V -12 - 12 V - - -3.7 A MOSFET transistor VDS drain-source voltage VGS gate-source voltage ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s IF forward current Tsp ≤ 105 °C - - 2 A VR reverse voltage Tamb = 25 °C - - 30 V - 80 102 mΩ [1] Schottky diode MOSFET transistor static characteristics RDSon drain-source on-state resistance VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C Scan or click this QR code to view the latest information for this product PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination Symbol Parameter Conditions Min Typ Max Unit IF = 1 A; Tj = 25 °C - 440 520 mV Schottky diode VF forward voltage [1] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A anode 2 n.c. not connected 3 D drain 4 S source 5 G gate 6 K cathode 7 K cathode 8 D drain Simplified outline 6 5 7 1 Graphic symbol 4 G A S 8 2 3 Transparent top view DFN2020-6 (SOT1118) K D aaa-003667 6. Ordering information Table 3. Ordering information Type number Package PMFPB8040XP Name Description Version DFN2020-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm SOT1118 7. Marking Table 4. Marking codes Type number Marking code PMFPB8040XP 1Y 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - -20 V MOSFET transistor VDS drain-source voltage PMFPB8040XP Product data sheet All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 2 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination Symbol Parameter Conditions VGS gate-source voltage ID drain current Min Max Unit -12 12 V VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.7 A VGS = -4.5 V; Tamb = 25 °C [1] - -2.7 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.7 A - -11 A [2] - 485 mW [1] - 1100 mW - 6250 mW - -1.1 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Source-drain diode IS source current Tamb = 25 °C VR reverse voltage Tamb = 25 °C - 30 V IF forward current Tsp ≤ 105 °C - 2 A IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 ; Tamb = 25 °C - 7 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 18 A tp = 8 ms; Tj(init) = 25 °C; half-sine wave [3] - 25 A total power dissipation Tamb = 25 °C [2] - 480 mW [1] - 1190 mW - 6250 mW [1] Schottky diode Ptot Tsp = 25 °C Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] PMFPB8040XP Product data sheet 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Calculated from square-wave measurements. All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 3 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 MOSFET transistor: Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 -10 Tj (°C) 175 MOSFET transistor: Normalized continuous drain current as a function of junction temperature 017aaa563 -102 ID (A) 125 Limit RDSon = VDS/ID tp = 10 µs tp = 100 µs -1 tp = 10 ms DC; Tsp = 25 °C -10-1 -10-2 -10-1 tp = 100 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 -1 -10 VDS (V) -102 IDM = single pulse Fig. 3. MOSFET transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMFPB8040XP Product data sheet All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 4 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - 225 260 K/W [2] - 99 115 K/W [2] - 54 62 K/W - 16 20 K/W [1] - - 260 K/W [2] - - 105 K/W - - 20 K/W MOSFET transistor Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) in free air in free air; t ≤ 5 s thermal resistance from junction to solder point Schottky diode Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) in free air thermal resistance from junction to solder point [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 017aaa564 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . duty cycle = 1 102 0.75 0.33 0.2 0.5 0.25 0.1 10 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMFPB8040XP Product data sheet All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 5 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 017aaa565 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.25 0.1 10 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 10-1 1 102 10 tp (s) 103 2 MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa088 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.1 10 0 1 10- 3 0.75 0.33 0.2 0.05 0.02 0.01 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 6. Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMFPB8040XP Product data sheet All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 6 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 017aaa089 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.05 0.1 10 0 0.02 0.01 1 10- 3 10- 2 10- 1 FR4 PCB, mounting pad for cathode 6 cm Fig. 7. 1 102 10 103 tp (s) 2 Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit MOSFET transistor static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.4 -0.6 -1 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C - 80 102 mΩ VGS = -4.5 V; ID = -2.7 A; Tj = 150 °C - 116 148 mΩ VGS = -2.5 V; ID = -2.5 A; Tj = 25 °C - 95 125 mΩ VGS = -1.8 V; ID = -1.1 A; Tj = 25 °C - 120 156 mΩ VDS = -10 V; ID = -2.7 A; Tj = 25 °C - 15 - S IGSS RDSon gfs gate leakage current drain-source on-state resistance transfer conductance MOSFET transistor dynamic characteristics QG(tot) total gate charge VDS = -10 V; ID = -2.7 A; VGS = -4.5 V; - 5.7 8.6 nC QGS gate-source charge Tj = 25 °C - 0.7 - nC QGD gate-drain charge - 0.96 - nC PMFPB8040XP Product data sheet All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 7 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 550 - pF Coss output capacitance Tj = 25 °C - 63 - pF Crss reverse transfer capacitance - 53 - pF td(on) turn-on delay time VDS = -10 V; ID = -2.4 A; VGS = -4.5 V; - 6 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 14 - ns td(off) turn-off delay time - 120 - ns tf fall time - 50 - ns MOSFET transistor source-drain diode VSD source-drain voltage IS = -1.1 A; VGS = 0 V; Tj = 25 °C - -0.8 -1.2 V forward voltage IF = 100 mA; Tj = 25 °C - 330 390 mV IF = 500 mA; Tj = 25 °C - 400 460 mV IF = 1 A; Tj = 25 °C - 440 520 mV VR = 5 V; Tj = 25 °C - 1 3.5 µA VR = 5 V; Tj = 125 °C - 0.33 1.2 mA VR = 10 V; Tj = 25 °C - 2 5 µA VR = 20 V; Tj = 25 °C - 4 15 µA VR = 30 V; Tj = 25 °C - 8 30 µA VR = 5 V; f = 1 MHz; Tj = 25 °C - 45 55 pF Schottky diode VF IR reverse current Cd diode capacitance 017aaa531 -10 -10 V ID (A) -4.5 V -8 017aaa532 -10-3 VGS = -1.8 V -2 V ID (A) -2.5 V -1.6 V min -6 typ max -10-4 -1.5 V -4 -1.4 V -2 -1.2 V -1 V 0 0 -1 -2 -3 VDS (V) -10-5 -4 Tj = 25 °C Fig. 8. Product data sheet -0.25 -0.50 -0.75 -1.00 VGS (V) Tj = 25 °C; VDS = -5 V MOSFET transistor: Output characteristics: drain current as a function of drain-source voltage; typical values PMFPB8040XP 0 Fig. 9. MOSFET transistor: Subthreshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 8 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 017aaa533 0.25 RDSon (Ω) RDSon (Ω) 0.20 -1.6 V 0.15 0.3 -1.8 V 0.2 -2.5 V -4.5 V 0.10 Tj = 25 °C 0.1 0.05 0 017aaa534 0.4 VGS = -1.4 V -1.3 V 0 -1 -2 -3 ID (A) 0 -4 Tj = 25 °C Tj = 150 °C 0 -1 -2 -3 VGS (V) -4 ID = -3 A Fig. 10. MOSFET transistor: Drain-source on-state Fig. 11. MOSFET transistor: Drain-source on-state resistance as a function of drain current; typical resistance as a function of gate-source voltage; values typical values 017aaa535 -10 017aaa536 2.0 ID (A) a -8 1.5 -6 1.0 -4 0.5 -2 0 Tj = 150 °C 0 -0.5 -1.0 Tj = 25 °C -1.5 0 -60 -2.0 -2.5 VGS (V) VDS > ID × RDSon Fig. 12. MOSFET transistor: Transfer characteristics: drain current as a function of gate-source voltage; typical values PMFPB8040XP Product data sheet 0 60 120 Tj (°C) 180 Fig. 13. MOSFET transistor: Normalized drain-source on-state resistance as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 9 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 017aaa537 -2.0 017aaa538 103 VGS(th) (V) Ciss -1.5 C (pF) max 102 -1.0 typ Coss min -0.5 Crss 0 -60 0 60 120 Tj (°C) 10 -10-1 180 ID = -0.25 mA; VDS = VGS -1 -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 14. MOSFET transistor: Gate-source threshold voltage as a function of junction temperature Fig. 15. MOSFET transistor: Input, output and reverse transfer capacitances as a function of drainsource voltage; typical values 017aaa539 -12 VDS VGS (V) ID -8 VGS(pl) VGS(th) VGS -4 QGS1 QGS2 QGS QGD QG(tot) 017aaa137 0 0 3 6 9 QG (nC) Fig. 17. MOSFET transistor: Gate charge waveform definitions 12 ID = -3 A; VDS = -10 V; Tamb = 25 °C Fig. 16. MOSFET transistor: Gate-source voltage as a function of gate charge; typical values PMFPB8040XP Product data sheet All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 10 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 017aaa540 -4 017aaa090 10 IF (A) IS (A) 1 -3 (1) (2) 10- 1 -2 (3) (4) (5) 10- 2 -1 0 Tj = 150 °C 0 -0.4 Tj = 25 °C -0.8 10- 3 -1.2 VSD (V) 10- 4 -1.4 VGS = 0 V 0 0.2 0.4 0.6 VF (V) 0.8 (1) Tj = 150 °C (2) Tj = 125 °C Fig. 18. MOSFET transistor: Source current as a function of source-drain voltage; typical values (3) Tj = 85 °C (4) Tj = 25 °C (5) Tj = −40 °C Fig. 19. Schottky diode: Forward current as a function of forward voltage; typical values 017aaa091 10- 2 IR (A) 10- 3 017aaa092 250 (1) Cd (pF) (2) 200 10- 4 150 10- 5 (3) 10- 6 100 10- 7 50 10- 8 10- 9 (4) 0 10 20 VR (V) 0 30 (1) Tj = 125 °C 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 °C (2) Tj = 85 °C Fig. 21. Schottky diode: Diode capacitance as a function of reverse voltage; typical values (3) Tj = 25 °C (4) Tj = −40 °C Fig. 20. Schottky diode: Reverse current as a function of reverse voltage; typical values PMFPB8040XP Product data sheet All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 11 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 017aaa093 2.4 (1) IF(AV) (A) 1.6 (2) (3) 0.8 0.0 (4) 0 25 FR4 PCB, mounting pad for cathode 6 cm Tj = 150 °C 50 75 100 125 150 175 Tamb (°C) 2 (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 22. Schottky diode: Average forward current as a function of ambient temperature; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 23. Duty cycle definition PMFPB8040XP Product data sheet All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 12 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 12. Package outline 2.1 1.9 0.65 max 1.1 0.9 0.77 0.57 (2×) 2.1 1.9 0.54 0.44 (2×) 0.04 max 3 4 1 6 0.65 (4×) 0.35 0.25 (6×) 0.3 0.2 Dimensions in mm 10-05-31 Fig. 24. Package outline DFN2020-6 (SOT1118) 13. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.72 (2×) 0.45 (6×) 0.82 (2×) sot1118_fr Fig. 25. Reflow soldering footprint for DFN2020-6 (SOT1118) 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMFPB8040XP v.1 20121221 Product data sheet - - PMFPB8040XP Product data sheet All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 13 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PMFPB8040XP Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 14 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMFPB8040XP Product data sheet All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 15 / 16 PMFPB8040XP NXP Semiconductors 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 7 11 Test information ................................................... 12 12 Package outline ................................................... 13 13 Soldering .............................................................. 13 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 December 2012 PMFPB8040XP Product data sheet All information provided in this document is subject to legal disclaimers. 21 December 2012 © NXP B.V. 2012. All rights reserved 16 / 16