BUK7905-40AI,127

BUK7905-40AI N-channel TrenchPLUS standard level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ Low conduction losses due to low on-state resistance „ Reduced component count due to integrated current sensor „ Q101 compliant „ Suitable for standard level gate drive sources 1.3 Applications „ Electrical Power Assisted Steering (EPAS) „ Variable Valve Timing for engines 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 2; see Figure 3; [1] Min Typ Max Unit - - 40 V - - 155 A mΩ Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 - 4.5 5 ID/Isense ratio of drain current to sense current Tj > -55 °C; VGS > 10 V; Tj < 175 °C 450 500 550 [1] Current is limited by power dissipation chip rating. BUK7905-40AI Nexperia N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 ISENSE current sense 3 D drain 4 KS Kelvin source 5 S source mb D mounting base; connected to drain Graphic symbol d mb g Isense s Kelvin source 03nl64 12 3 4 5 SOT263B (TO-220) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7905-40AI TO-220 plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead SOT263B TO-220 © BUK7905-40AI_2 Product data sheet Rev. 02 — 16 February 2009 Nexperia B.V. 2017. All rights reserved 2 of 14 BUK7905-40AI Nexperia N-channel TrenchPLUS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V VDGR drain-gate voltage RGS = 20 kΩ VGS gate-source voltage ID drain current - 40 V -20 20 V Tmb = 25 °C; VGS = 10 V; see Figure 2; see Figure 3; [1] - 155 A [2] - 75 A Tmb = 100 °C; VGS = 10 V; see Figure 2; [2] - 75 A IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; see Figure 3 - 620 A Ptot total power dissipation Tmb = 25 °C; see Figure 1 - 272 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C [1] - 155 A [2] - 75 A - 620 A - 1.46 J - 4 kV Source-drain diode IS ISM source current Tmb = 25 °C; peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C Avalanche ruggedness EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; drain-source avalanche Tj(init) = 25 °C; unclamped energy Electrostatic discharge Vesd electrostatic discharge voltage HBM; C = 100 pF; R = 1.5 kΩ [1] Current is limited by power dissipation chip rating. [2] Continuous current is limited by package. © BUK7905-40AI_2 Product data sheet Rev. 02 — 16 February 2009 Nexperia B.V. 2017. All rights reserved 3 of 14 BUK7905-40AI Nexperia N-channel TrenchPLUS standard level FET 03na19 120 03ng16 160 ID (A) Pder (%) 120 80 80 capped at 75A due to package 40 40 0 0 0 50 100 150 200 0 50 100 150 Tmb (°C) Fig 2. Fig 1. 200 Tmb (°C) Normalized total power dissipation as a function of mounting base temperature Continuous drain current as a function of mounting base temperature 103 03ng17 ID (A) Limit RDSon = VDS/ID tp = 10 µs 100 µs 102 Capped at 75 A due to package 1 ms DC 10 ms 10 100 ms 1 1 Fig 3. 10 102 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage © BUK7905-40AI_2 Product data sheet Rev. 02 — 16 February 2009 Nexperia B.V. 2017. All rights reserved 4 of 14 BUK7905-40AI Nexperia N-channel TrenchPLUS standard level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-mb) Conditions Min Typ Max Unit thermal resistance from vertical in still air junction to ambient - 60 - K/W thermal resistance from see Figure 4 junction to mounting base - - 0.55 K/W 03ni64 1 Z th(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 0.02 10-2 δ= P tp T single shot t tp T 10-3 10-6 Fig 4. 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Transient thermal impedance from junction to mounting base as a function of pulse duration © BUK7905-40AI_2 Product data sheet Rev. 02 — 16 February 2009 Nexperia B.V. 2017. All rights reserved 5 of 14 BUK7905-40AI Nexperia N-channel TrenchPLUS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 40 ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 36 gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 9 2 ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 9 Typ Max Unit - - V - - V 3 4 V 1 - - V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 9 - - 4.4 V VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.1 10 µA VDS = 40 V; VGS = 0 V; Tj = 175 °C - - 500 µA VDS = 0 V; VGS = 20 V; Tj = 25 °C - 2 100 nA VDS = 0 V; VGS = -20 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7; see Figure 8 - 4.5 5 mΩ VGS = 10 V; ID = 50 A; Tj = 175 °C; see Figure 7; see Figure 8 - - 9.5 mΩ VGS > 10 V; Tj > -55 °C; Tj < 175 °C 450 500 550 VGS = 10 V; ID = 25 mA; Tj = 25 °C; see Figure 16 0.98 1.08 1.18 Ω VGS = 10 V; ID = 25 mA; Tj = 175 °C; see Figure 16 1.86 2.05 2.24 Ω ID = 25 A; VDS = 32 V; VGS = 10 V; Tj = 25 °C; see Figure 14 - 120 127 nC - 19 22 nC - 50 60 nC - 4300 5000 pF - 1400 1670 pF - 820 1100 pF - 35 - ns - 115 - ns Static characteristics V(BR)DSS VGS(th) IDSS IGSS RDSon ID/Isense drain leakage current gate leakage current drain-source on-state resistance ratio of drain current to sense current R(D-ISENSE)on drain-ISENSE on-state resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 155 - ns tf fall time - 110 - ns LD internal drain inductance measured from upper edge of drain mounting base to center of die; Tj = 25 °C - 2.5 - nH LS internal source inductance measured from source lead to source bond pad; Tj = 25 °C - 7.5 - nH VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 12 VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C © BUK7905-40AI_2 Product data sheet Rev. 02 — 16 February 2009 Nexperia B.V. 2017. All rights reserved 6 of 14 BUK7905-40AI Nexperia N-channel TrenchPLUS standard level FET Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Source-drain diode VSD source-drain voltage IS = 40 A; VGS = 0 V; Tj = 25 °C; see Figure 17 - 0.85 1.2 V trr reverse recovery time - 96 - ns Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V; Tj = 25 °C - 224 - nC 03ni86 400 ID (A) Label is VGS (V) 10 8 RDSon (mΩ) 7.5 20 300 03ni88 12 7 8 6.5 200 6 5.5 100 4 5 4.5 4 0 0 0 Fig 5. 2 4 6 8 10 VDS (V) Output characteristics: drain current as a function of drain-source voltage; typical values 4 Fig 6. 16 VGS (V) 20 Drain-source on-state resistance as a function of gate-source voltage; typical values 03ni30 a VGS = 5.5 V 6 V RDSon (mΩ) 12 2.0 03ni87 20 8 6.5 V 7V 1.6 15 1.2 10 0.8 8V 10 V 5 0.4 20 V 0 0 Fig 7. 100 200 0 −60 300 I (A) 400 D Drain-source on-state resistance as a function of drain current; typical values Fig 8. 60 120 180 Tj (°C) Normalized drain-source on-state resistance factor as a function of junction temperature © BUK7905-40AI_2 Product data sheet 0 Rev. 02 — 16 February 2009 Nexperia B.V. 2017. All rights reserved 7 of 14 BUK7905-40AI Nexperia N-channel TrenchPLUS standard level FET 03aa32 5 ID (A) VGS(th) (V) 4 typ max 10−3 typ 2 min 10−2 max 3 10−4 min 10−5 1 0 −60 Fig 9. 03aa35 10−1 10−6 0 60 120 0 180 2 4 6 Tj (°C) VGS (V) Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage 03ne67 8 03ni89 90 C (nF) gfs (S) 6 60 Ciss 4 30 2 Coss Crss 0 0 25 50 75 100 0 10−1 1 102 10 ID (A) VDS (V) Fig 11. Forward transconductance as a function of drain current; typical values Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values © BUK7905-40AI_2 Product data sheet Rev. 02 — 16 February 2009 Nexperia B.V. 2017. All rights reserved 8 of 14 BUK7905-40AI Nexperia N-channel TrenchPLUS standard level FET 03ni26 10 03ni90 100 VGS (V) ID (A) 8 75 VDS = 14 V 6 32 V 50 4 175 °C 25 Tj = 25 °C 2 0 0 0 2 4 VGS (V) 40 80 120 QG (nC) Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03nn69 600 0 6 Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values 03nk33 4 RD(Is)on (Ω) ID/Isense 550 3 500 2 450 1 400 0 4 8 12 16 V 20 GS (V) Fig 15. Drain-sense current ratio as a function of gate-source voltage; typical values 4 8 VGS (V) 10 Fig 16. Drain-sense current on-state resistance as a function of gate-source voltage; typical values © BUK7905-40AI_2 Product data sheet 6 Rev. 02 — 16 February 2009 Nexperia B.V. 2017. All rights reserved 9 of 14 BUK7905-40AI Nexperia N-channel TrenchPLUS standard level FET 03ni91 100 ID (A) 80 60 40 175 °C 20 Tj = 25 °C 0 0.0 0.4 0.8 1.2 VSD (V) 1.6 Fig 17. Drain current as a function of source-drain diode voltage; typical values © BUK7905-40AI_2 Product data sheet Rev. 02 — 16 February 2009 Nexperia B.V. 2017. All rights reserved 10 of 14 BUK7905-40AI Nexperia N-channel TrenchPLUS standard level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 SOT263B E p1 A ∅p A1 q D1 mounting base D L1 Q L2 m L 1 5 e b c w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D D1 E e L mm 4.5 4.1 1.39 1.27 0.85 0.70 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 1.7 15.0 13.5 L1 (1) 2.4 1.6 (2) L2 0.5 m ∅p p1 q Q w 0.8 0.6 3.8 3.6 4.3 4.1 3.0 2.7 2.6 2.2 0.4 Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION SOT263B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-11 5-lead TO-220 Fig 18. Package outline SOT263B (TO-220) © BUK7905-40AI_2 Product data sheet Rev. 02 — 16 February 2009 Nexperia B.V. 2017. All rights reserved 11 of 14 BUK7905-40AI Nexperia N-channel TrenchPLUS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK7905-40AI_2 20090216 Product data sheet - BUK7905_40AI-01 Modifications: BUK7905_40AI-01 (9397 750 12346) • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. 20040209 Product data sheet - © BUK7905-40AI_2 Product data sheet - Rev. 02 — 16 February 2009 Nexperia B.V. 2017. All rights reserved 12 of 14 BUK7905-40AI Nexperia N-channel TrenchPLUS standard level FET 9. Legal information 9.1 Data sheet status Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com © BUK7905-40AI_2 Product data sheet Rev. 02 — 16 February 2009 Nexperia B.V. 2017. All rights reserved 13 of 14 Nexperia BUK7905-40AI N-channel TrenchPLUS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 16 February 2009