GA06JT12-247

GA06JT12-247   Normally – OFF Silicon Carbide Junction Transistor VDS VDS(ON) ID RDS(ON) Features Package         RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Positive temperature coefficient for easy paralleling Low gate charge Low intrinsic capacitance = = = = D 1200 V 1.3 V 6A 220 mΩ D G D G S S TO-247AB   Applications Advantages             Low switching losses Higher efficiency High temperature operation High short circuit withstand capability Down Hole Oil Drilling, Geothermal Instrumentation Hybrid Electric Vehicles (HEV) Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Induction Heating Uninterruptible Power Supply (UPS) Motor Drives Maximum Ratings unless otherwise specified Parameter Drain – Source Voltage Continuous Drain Current Gate Peak Current Symbol VDS ID IGM Turn-Off Safe Operating Area RBSOA Short Circuit Safe Operating Area SCSOA Reverse Gate – Source Voltage Reverse Drain – Source Voltage Power Dissipation Storage Temperature VSG VSD Ptot Tstg Conditions VGS = 0 V TC,MAX = 90 °C TVJ = 175 oC, IG = 1 A, Clamped Inductive Load TVJ = 175 oC, IG = 1 A, VDS = 800 V, Non Repetitive TC = 25 °C Values 1200 6 5 ID,max = 6 @ VDS ≤ VDSmax Unit V A A 20 µs 30 40 146 -55 to 175 V V W °C A Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions min. Values typ. max. Unit On Characteristics Drain – Source On Voltage VDS(ON) Drain – Source On Resistance RDS(ON) Gate Forward Voltage VGS(FWD) DC Current Gain β ID = 6 A, IG = 500 mA, Tj = 25 °C ID = 6 A, IG = 1000 mA, Tj = 125 °C ID = 6 A, IG = 1000 mA, Tj = 175 °C ID = 6 A, IG = 500 mA, Tj = 25 °C ID = 6 A, IG = 1000 mA, Tj = 125 °C ID = 6 A, IG = 1000 mA, Tj = 175 °C IG = 500 mA, Tj = 25 °C IG = 500 mA, Tj = 175 °C VDS = 5 V, ID = 6 A, Tj = 25 °C VDS = 5 V, ID = 6 A, Tj = 175 °C 45 1.3 1.7 2.2 220 280 370 3.1 2.9 53 33 1.7 2.2 3.0 0.5 1 2 20 10 50 100 V mΩ V Off Characteristics Drain Leakage Current IDSS Gate Leakage Current ISG Nov 2013   VR = 1200 V, VGS = 0 V, Tj = 25 °C VR = 1200 V, VGS = 0 V, Tj = 125 °C VR = 1200 V, VGS = 0 V, Tj = 175 °C VSG = 20 V, Tj = 25 °C http://www.genesicsemi.com/index.php/sic-products/sjt µA nA Pg1 of 7 GA06JT12-247   Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Cgs Ciss Crss/Coss VGS = 0 V, f = 1 MHz VGS = 0 V, VD = 1 V, f = 1 MHz VD = 1 V, f = 1 MHz min. Values typ. max. Unit Capacitance Characteristics Gate-Source Capacitance Input Capacitance Reverse Transfer/Output Capacitance 660 900 240 pF pF pF 13 7 54 51 175 44 219 11 8 79 45 159 55 214 ns ns ns ns µJ µJ µJ ns ns ns ns µJ µJ µJ 1.03 °C/W Switching Characteristics Turn On Delay Time Rise Time, Drain Current Turn Off Delay Time Fall Time, Drain Current Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy Turn On Delay Time Rise Time, Drain Current Turn Off Delay Time Fall Time, Drain Current Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tj = 25 ºC, VDD = 800 V, ID = 6 A, “Option #1” Gate Drive RG(on) = RG(off) = 1.5 Ω, CG = 9 nF VGH = 20 V, VGL = 6 V, VEE = -5 V L = 1.05 mH, FWD = GB05SLT12, Refer to Figure 15 for gate current waveform Tj = 175 ºC, VDD = 800 V, ID = 6 A, “Option #1” Gate Drive RG(on) = RG(off) = 1.5 Ω, CG = 9 nF VGH = 20 V, VGL = 6 V, VEE = -5 V L = 1.05 mH, FWD = GB05SLT12, Refer to Figure 15 for gate current waveform Thermal Characteristics Thermal resistance, junction - case RthJC Figures Figure 1: Typical Output Characteristics at 25 °C Nov 2013   Figure 2: Typical Output Characteristics at 125 °C http://www.genesicsemi.com/index.php/sic-products/sjt Pg2 of 7 GA06JT12-247   Figure 3: Typical Output Characteristics at 175 °C Figure 4: Typical Gate Source I-V Characteristics vs. Temperature Figure 5: Normalized On-Resistance and Current Gain vs. Temperature Figure 6: Typical Blocking Characteristics Figure 7: Capacitance Characteristics Figure 8: Capacitance Characteristics Nov 2013   http://www.genesicsemi.com/index.php/sic-products/sjt Pg3 of 7 GA06JT12-247     Figure 9: Typical Hard-switched Turn On Waveforms Figure 10: Typical Hard-switched Turn Off Waveforms Figure 11: Typical Turn On Energy Losses and Switching Times vs. Temperature Figure 12: Typical Turn Off Energy Losses and Switching Times vs. Temperature Figure 13: Typical Turn On Energy Losses vs. Drain Current Figure 14: Typical Turn Off Energy Losses vs. Drain Current Nov 2013   http://www.genesicsemi.com/index.php/sic-products/sjt Pg4 of 7 GA06JT12-247     1 Figure 15: Typical Gate Current Waveform Figure 16: Typical Hard Switched Device Power Loss vs. 1 Switching Frequency Figure 17: Power Derating Curve Figure 18: Forward Bias Safe Operating Area Figure 19: Turn-Off Safe Operating Area Figure 20: Transient Thermal Impedance – Representative values based on device switching energy loss. Actual losses will depend on gate drive conditions, device load, and circuit topology. Nov 2013   http://www.genesicsemi.com/index.php/sic-products/sjt Pg5 of 7 GA06JT12-247   Gate Drive Technique (Option #1) To drive the GA06JT12-247 with the lowest gate drive losses, please refer to the dual voltage source gate drive configuration described in Application Note AN-10B (http://www.genesicsemi.com/index.php/references/notes). Gate Drive Technique (Option #2) The GA06JT12-247 can be effectively driven using the IXYS IXDN614 / IXDD614 non-inverting gate driver IC or a comparable product. A typical gate driver configuration along with component values using this driver is offered below. Additional information is available in GeneSiC Application Note AN-10A and from the manufacturer at www.ixys.com. Figure 21: Gate Diver Configuration (Option #2) Parameter Symbol Conditions min. Values typ. max. Unit Option #1 Gate Drive Conditions (IXDD614/IXDN614) Supply Voltage, High Side Driver Supply Voltage, Low Side Driver Off State Voltage, Both Drivers Gate Control Input Signal, Low Gate Control Input Signal, High Enable, Low Enable, High Output Voltage, Low Output Voltage, High Output Current, Peak Output Current, Continuous VCC VCC GND IN IN EN EN VOUT VOUT IOUT IOUT 15 5 VGH VGL VEE -5.0 4 IXDD614 Only IXDD614 Only 20 6 -5 0 5.0 30 0 0.8 VCC+0.3 1/3*VCC 2/3*VCC 0.025 VCC-0.025 Package Limited 0.5 14 4.0 V V V V V V V V V A A Passive Gate Components Gate Resistance Gate Capacitance Nov 2013   RG CG VGL = 6.0 V, IG ≈ 0.5 A VGH = 20 V, IG,pk ≈ 2.0 A http://www.genesicsemi.com/index.php/sic-products/sjt 5 1.6 9 5 Ω nF Pg6 of 7 GA06JT12-247   Package Dimensions: TO-247AB PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Revision History Date Revision Comments 2013/11/13 4 Updated Electrical Characteristics 2013/08/23 3 Updated Switching Characteristics 2013/06/24 2 Updated Electrical Characteristics 2013/02/21 1 Revised Electrical Characteristics 2012/11/30 0 Initial Release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Nov 2013   http://www.genesicsemi.com/index.php/sic-products/sjt Pg7 of 7 GA06JT12-247   SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GA06JT12 SJT device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 26-AUG-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * http://www.genesicsemi.com/index.php/sic-products/sjt * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * .model GA06JT12 NPN + IS 5.08E-47 + ISE 1.26E-28 + EG 3.2 + BF 58.31 + BR 0.55 + IKF 200 + NF 1 + NE 1.892 + RB 0.26 + RE 0.1039 + RC 0.06188 + CJC 2.73E-10 + VJC 3.04 + MJC 0.448 + CJE 6.86E-10 + VJE 2.89 + MJE 0.466 + XTI 3 + XTB -1.33 + TRC1 1.90E-2 + VCEO 1200 + ICRATING 6 + MFG GeneSiC_Semiconductor * * End of GA06JT12 SPICE Model Aug 2013   http://www.genesicsemi.com/index.php/sic-products/sjt Pg1 of 1