2N7638-GA

2N7638-GA   Normally – OFF Silicon Carbide Junction Transistor VDS VDS(ON) ID RDS(ON) Features Package         RoHS Compliant 250 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Positive temperature coefficient for easy paralleling Low gate charge Low intrinsic capacitance = = = = 650 V 1.4 V 8A 180 mΩ D S G G D S SMD0.5 / TO – 276 (Hermetic Package) Advantages Applications             Low switching losses Higher efficiency High temperature operation High short circuit withstand capability Down Hole Oil Drilling, Geothermal Instrumentation Hybrid Electric Vehicles (HEV) Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Induction Heating Uninterruptible Power Supply (UPS) Motor Drives Maximum Ratings at Tj = 250 °C, unless otherwise specified Parameter Drain – Source Voltage Continuous Drain Current Gate Peak Current Reverse Gate – Source Voltage Reverse Drain – Source Voltage Power Dissipation Operating and Storage Temperature Symbol VDS ID IGM VGS VDS Ptot Tj, Tstg Conditions Values 650 8 5 30 40 11 -55 to 250 VGS = 0 V TC = 158 °C TC = 25 °C Unit V A A V V W °C Electrical Characteristics at Tj = 250 °C, unless otherwise specified Parameter Symbol Conditions min. Values typ. 2.1 3.7 4.8 80 50 1.4 2.6 3.9 180 330 490 3 2.7 110 80 10 40 100 100 400 600 max. Unit On Characteristics Drain – Source On Voltage VDS(ON) Drain – Source On Resistance RDS(ON) Gate Forward Voltage VGS(FWD) DC Current Gain β ID = 8 A, IG = 250 mA, Tj = 25 °C ID = 8 A, IG = 500 mA, Tj = 175 °C ID = 8 A, IG = 500 mA, Tj = 250 °C ID = 8 A, IG = 250 mA, Tj = 25 °C ID = 8 A, IG = 500 mA, Tj = 175 °C ID = 8 A, IG = 500 mA, Tj = 250 °C IG = 500 mA, Tj = 25 °C IG = 500 mA, Tj = 250 °C VDS = 5 V, ID = 10 A, Tj = 25 °C VDS = 5 V, ID = 10 A, Tj = 250 °C V mΩ V Off Characteristics Drain Leakage Current Nov 2013   IDSS VR = 650 V, VGS = 0 V, Tj = 25 °C VR = 650 V, VGS = 0 V, Tj = 175 °C VR = 650 V, VGS = 0 V, Tj = 250 °C http://www.genesicsemi.com/index.php/hit-sic/sjt µA Pg1 of 5 2N7638-GA   Electrical Characteristics at Tj = 250 °C, unless otherwise specified Parameter Symbol Conditions Ciss Coss Crss VDS = 35 V, VGS = 0 V, f = 1 MHz, Tvj = 25 °C min. Values typ. max. Unit Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance 720 88 88 pF pF pF 11 28 76 38 34 64 98 12 30 73 58 43 82 125 ns ns ns ns µJ µJ µJ ns ns ns ns µJ µJ µJ 1 °C/W Switching Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Turn-On Energy Per Pulse Turn-Off Energy Per Pulse Total Switching Energy td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets VDD = 400 V, ID = 10 A, RG(on) = RG(off) = 32 Ω, VGS = -8/15 V ,Tj = 175 ºC Refer to Figure 10 for gate drive current waveforms VDD = 400 V, ID = 10 A, RG(on) = RG(off) = 32 Ω, VGS = -8/15 V ,Tj = 250 ºC Refer to Figure 10 for gate drive current waveforms Thermal Characteristics Thermal resistance, junction - case RthJC Figure 1: Typical Output Characteristics at 25 °C Nov 2013   Figure 2: Typical Output Characteristics at 175 °C http://www.genesicsemi.com/index.php/hit-sic/sjt Pg2 of 5 2N7638-GA   Figure 3: Typical Output Characteristics at 250 °C Figure 4: Typical Gate Source I-V Characteristics vs. Temperature Figure 5: Normalized On-Resistance and Current Gain vs. Temperature Figure 6: Typical Blocking Characteristics Figure 7: Typical Capacitance vs Drain-Source Voltage Figure 8: Typical Turn On Energy Losses and Switching Times vs. Temperature Nov 2013   http://www.genesicsemi.com/index.php/hit-sic/sjt Pg3 of 5 2N7638-GA   Figure 9: Typical Turn Off Energy Losses and Switching Times vs. Temperature Figure 10: Typical Gate-Source Switching Waveforms Package Dimensions: SMD-0.5/TO-276 PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Nov 2013   http://www.genesicsemi.com/index.php/hit-sic/sjt Pg4 of 5 2N7638-GA   Revision History Date Revision Comments 2013/11/18 1 Updated Electrical Characteristics 2012/08/24 0 Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Nov 2013   http://www.genesicsemi.com/index.php/hit-sic/sjt Pg5 of 5 2N7638-GA   SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 2N7638-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 06-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * http://www.genesicsemi.com/index.php/hit-sic/sjt * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * .model 2N7638 NPN + IS 3.73E-46 + ISE 5.50E-28 + EG 3.2 + BF 103 + BR 0.55 + IKF 900 + NF 1 + NE 2.021 + RB 0.26 + RE 0.1 + RC 0.09 + CJC 2.77E-10 + VJC 3.023103628 + MJC 0.460762158 + CJE 8.23E-10 + VJE 2.945448229 + MJE 0.498044294 + XTI 3 + XTB -0.35 + TRC1 1.20E-02 + VCEO 650 + ICRATING 8 + MFG GeneSiC_Semiconductor * * End of 2N7638-GA SPICE Model Nov 2013   http://www.genesicsemi.com/index.php/hit-sic/sjt Pg1 of 1