2N7639-GA
Normally – OFF Silicon Carbide
Junction Transistor
VDS
VDS(ON)
ID
RDS(ON)
Features
Package
RoHS Compliant
250 °C maximum operating temperature
Temperature independent switching performance
Electrically isolated base-plate
Gate oxide free SiC switch
Suitable for connecting an anti-parallel diode
Positive temperature coefficient for easy paralleling
Low gate charge
Low intrinsic capacitance
=
=
=
=
600 V
1.3 V
20 A
65 mΩ
D
G
S
G D S
TO – 257 (Isolated Base-plate Hermetic Package)
Advantages
Applications
Low switching losses
Higher efficiency
High temperature operation
High short circuit withstand capability
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Maximum Ratings at Tj = 250 °C, unless otherwise specified
Parameter
Drain – Source Voltage
Continuous Drain Current
Gate Peak Current
Symbol
VDS
ID
IGM
Turn-Off Safe Operating Area
RBSOA
Short Circuit Safe Operating Area
SCSOA
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Operating and Storage Temperature
VGS
VDS
Ptot
Tj, Tstg
Conditions
VGS = 0 V
145 °C < TC < 160 °C
TVJ = 250 oC, IG = 1 A,
Clamped Inductive Load
TVJ = 250 oC, IG = 2.5 A, VDS = 400 V,
Non Repetitive
TC = 25 °C
Values
600
20
5
ID,max = 20
@ VDS ≤ VDSmax
Unit
V
A
A
20
µs
30
40
22
-55 to 250
V
V
W
°C
A
Electrical Characteristics at Tj = 250 °C, unless otherwise specified
Parameter
Symbol
Conditions
Drain – Source On Voltage
VDS(ON)
ID = 20 A, IG = 400 mA, Tj = 25 °C
ID = 20 A, IG = 500 mA, Tj = 125 °C
ID = 20 A, IG = 1000 mA, Tj = 175 °C
ID = 20 A, IG = 1000 mA, Tj = 250 °C
Drain – Source On Resistance
RDS(ON)
ID = 20 A, IG = 400 mA, Tj = 25 °C
ID = 20 A, IG = 500 mA, Tj = 125 °C
ID = 20 A, IG = 1000 mA, Tj = 175 °C
ID = 20 A, IG = 1000 mA, Tj = 250 °C
Gate Forward Voltage
VGS(FWD)
IG = 1000 mA, Tj = 25 °C
IG = 1000 mA, Tj = 250 °C
β
VDS = 5 V, ID = 20 A, Tj = 25 °C
VDS = 5 V, ID = 20 A, Tj = 125 °C
VDS = 5 V, ID = 20 A, Tj = 175 °C
VDS = 5 V, ID = 20 A, Tj = 250 °C
min.
Values
typ.
max.
Unit
On Characteristics
DC Current Gain
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1.3
1.8
2.2
3.3
65
91
110
165
3.0
2.7
110
78
73
69
V
mΩ
V
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2N7639-GA
Off Characteristics
Drain Leakage Current
IDSS
Gate Leakage Current
ISG
10
50
100
20
VR = 600 V, VGS = 0 V, Tj = 25 °C
VR = 600 V, VGS = 0 V, Tj = 175 °C
VR = 600 V, VGS = 0 V, Tj = 250 °C
VSG = 20 V, Tj = 25 °C
µA
nA
Electrical Characteristics at Tj = 250 °C, unless otherwise specified
Parameter
Symbol
Conditions
Cgs
Ciss
Crss/Coss
VGS = 0 V, f = 1 MHz
VGS = 0 V, VD = 1 V, f = 1 MHz
VD = 1 V, f = 1 MHz
min.
Values
typ.
max.
Unit
Capacitance Characteristics
Gate-Source Capacitance
Input Capacitance
Reverse Transfer/Output Capacitance
2400
3700
840
pF
pF
pF
92
42
51
31
811
96
907
91
17
50
21
100
40
140
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
1.16
°C/W
Switching Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
VDD = 400 V, ID = 20 A,
VGS = -8/15 V ,Tj = 175 ºC
Refer to Figure 15 for gate drive
current waveforms
VDD = 400 V, ID = 20 A,
VGS = -8/15 V ,Tj = 250 ºC
Refer to Figure 15 for gate drive
current waveforms
Thermal Characteristics
Thermal resistance, junction - case
RthJC
Figures
Figure 1: Typical Output Characteristics at 25 °C
Dec 2013
Figure 2: Typical Output Characteristics at 125 °C
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2N7639-GA
Figure 3: Typical Output Characteristics at 250 °C
Figure 4: Typical Gate Source I-V Characteristics vs.
Temperature
Figure 5: Normalized On-Resistance and Current Gain vs.
Temperature
Figure 6: Typical Blocking Characteristics
Figure 7: Capacitance Characteristics
Figure 8: Capacitance Characteristics
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2N7639-GA
Figure 9: Typical Hard-switched Turn On Waveforms
Figure 10: Typical Hard-switched Turn Off Waveforms
Figure 11: Typical Turn On Energy Losses and Switching
Times vs. Temperature
Figure 12: Typical Turn Off Energy Losses and Switching
Times vs. Temperature
Figure 13: Typical Turn On Energy Losses vs. Drain
Current
Figure 14: Typical Turn Off Energy Losses vs. Drain
Current
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2N7639-GA
1
Figure 15: Typical Gate Current Waveform
Figure 16: Typical Hard Switched Device Power Loss vs.
1
Switching Frequency
Figure 17: Power Derating Curve
Figure 18: Forward Bias Safe Operating Area at Tc=145 C
Figure 19: Turn-Off Safe Operating Area
Figure 20: Transient Thermal Impedance
– Representative values based on device switching energy loss. Actual losses will depend on gate drive conditions, device load, and circuit topology.
Dec 2013
o
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2N7639-GA
Gate Drive Technique (Option #1)
To drive the 2N7639-GA with the lowest gate drive losses, please refer to the dual voltage source gate drive configuration
described in Application Note AN-10B (http://www.genesicsemi.com/index.php/references/notes).
Gate Drive Technique (Option #2)
The 2N7639-GA can be effectively driven using the IXYS IXDN614 / IXDD614 non-inverting gate driver IC or a comparable
product. A typical gate driver configuration along with component values using this driver is offered below. Additional
information is available in GeneSiC Application Note AN-10A and from the manufacturer at www.ixys.com.
Figure 21: Recommended Gate Diver Configuration (Option #2)
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Option #1 Gate Drive Conditions (IXDD614/IXDN614)
Supply Voltage, High Side Driver
Supply Voltage, Low Side Driver
Off State Voltage, Both Drivers
Gate Control Input Signal, Low
Gate Control Input Signal, High
Enable, Low
Enable, High
Output Voltage, Low
Output Voltage, High
Output Current, Peak
Output Current, Continuous
VCC
VCC
GND
IN
IN
EN
EN
VOUT
VOUT
IOUT
IOUT
VGH
VGL
VEE
15
5
-5.0
4
IXDD614 Only
IXDD614 Only
20
6.5
-10
0
5.0
30
0
0.8
VCC+0.3
1/3*VCC
2/3*VCC
0.025
VCC-0.025
Package Limited
0.5
14
4.0
V
V
V
V
V
V
V
V
V
A
A
Passive Gate Components
Gate Resistance
Gate Capacitance
Dec 2013
RG
CG
VGL = 6.0 V, IG ≈ 0.5 A
VGH = 20 V, IG,pk ≈ 4.0 A
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20
1.6
35
5
Ω
nF
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2N7639-GA
Package Dimensions:
TO-257
PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Revision History
Date
Revision
Comments
2013/12/09
2
Updated Electrical Characteristics
2013/11/18
1
Updated Electrical Characteristics
2012/08/24
0
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Dec 2013
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2N7639-GA
SPICE Model Parameters
Copy the following code into a SPICE software program for simulation of the 2N7639-GA device.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.0
$
*
$Date:
06-SEP-2013
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
http://www.genesicsemi.com/index.php/hit-sic/sjt
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
.model 2N7639-GA NPN
+ IS
6.03E-47
+ ISE
1.72E-28
+ EG
3.23
+ BF
122
+ BR
0.55
+ IKF
300
+ NF
1
+ NE
1.868
+ RB
0.26
+ RE
0.088
+ RC
0.01
+ CJC
5.68E-10
+ VJC
2.978967839
+ MJC
0.466424924
+ CJE
1.72E-09
+ VJE
2.77859888
+ MJE
0.48415
+ XTI
3
+ XTB
-0.78
+ TRC1
7.00E-02
+ VCEO
600
+ ICRATING 20
+ MFG
GeneSiC_Semiconductor
*
* End of 2N7639-GA SPICE Model
Dec 2013
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